, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BD777* BD779* BD776* BD778* BD780* PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 46. 60. 80 VOLTS IS WATTS . . . designed for genera! purpose amplifier and high-speed switching applications. • High DC Current Gain hfE - 1400 (Typ) @ IG - 2.0 Adc • Collector-Emitter Sustaining Voltage - @ 10 mAdc VCEO («"«) • - 45 Vde (Mln) — BD77B 60 Vde (Mini — BD777.778 - BO Vde (Mln) — BD779,780 Reverse Voltage Protection Diode • Monolithic Construction with Built-in Base-Emitter output Resistor MAXIMUM RATINGS nettle B0779 B0776 BO77B Collector-Emitter Volugt VCEO 45 60 80 Vdc Collector-Baal Voltage VCB VEB 46 60 80 Vde Emitter- Voltage "c Colltctor Cumni — Continuous Pmk Bnt Current Tout Device Oivipetian TC — 25"C - Derm ibov* 2S"C ••o Operating and Stor«g> junction Tempereture Ren«. TJ.T,,S TJ.T,,, S.O Vde 4.0 6.0 Ade 100 mAdc 15 0.12 W/»C - 65W + 150 3Bh- " LC^F o ^ -11 C(- E t~ . I HJ~ 1 K _1 •c U-v •-a .- ~J U-R U-S I*|0.25(O.OIO)®| A®l B® | _, -J *-D>H.|+|0.2S(0.010)®| A®| B® | THERMAL CHARACTERISTICS ThernulRnitunce. Junction to CMC R0JC 8.34 "CNt Thermal Reiiitmce. junction to Ambient R0JA 813 'CM FIGURE 1 - POWER DERATING NOUS: i MBanNmiwottXEnwcwEnM* VI4JM.WB. I COHIWUHBlMMICttWCH i vr« Tmu-eioeennt.*wsT*eMm tn«. . j M ..MI. . m j:,»«». a J L Jl ii :E 31, 40 0.4 s 1 M> S: : H IA i l.« PHI. anroi i coufcrai fitt 1> Ml I t. ^-•41 . JO. .S . B . i s 1 , j: ' - Ali - . li i_ .-1i i :• -4* jjijfe. : i: ! * ,8,R if 1 _ _U I ^j 1 0 « j,|« 9.11 - 1W - TO-22SAATYPE N ioe T. TEMPERATURE Itl IM 140 Annular Stmteooduciort Patented by Motorale Inc. Trademerk of Motgrole Inc. BD777, BD779 NPN BD776, BD778, BD780 PNP id) ELECTRICAL CHARACTERISTICS (Tc - 25°C unto* Mhi CHARACTERISTIC SVMBOL OFF CHARACTERISTICS Collacior-Emittir CoHtctor-Emitttr Suiuinino, Volugi (1) |IO - 10 mAde. IB - 0) BD776 BD777, B0778 B0779. BO780 VC60 («•! CollKlor Cutoff Currant 1 VCE = 20 Vde, IB - 01 (VcE ~ 30 Vdc, IB - 01 (VCE " 40 Vdc, Ig - 0» MIN. MAX. Vdc 45 60 80 MAdc 'CEO 100 100 100 B0776 BD777, BD778 8D779, BO 780 Collector Cutoff Currant <VCB - ««•* VCEO <*»»>• IE - « MAde ICBO 1.0 100 IVCB - Rand, VCEO <»•'. "E • 0, Ic " 100 °C) Emimr Cutoff Currant (V BE -S.OVdt, I C "0) UNIT IEBO 1.0 MAdc ON CHARACTERISTICS DC Currant G*n llc - 2.0 Ade. VCE - 3.0vdcl HFE Colltctor-Emimr Saturation Voltagf (l c - 1.5 Adc, l e - BmAdc) VCE (Sail 1.5 Vdc B«* Emilltr Siturition Voltigi V BE (Sat) 2.5 Vdc Bot-Emitttf On Volup (lc - 1 5 Adc. VCE - 3 Vdc) VBE (On) 2.3 Vdc Output Diodt Volugt Drop (IEC "2.0 Ade) VEC 2.0 Vde DC - 1.5 Adc. IB - 7» 6 mAdct DYNAMIC CHARACTERISTICS Currant Gain Bandwidth Product llc - 1.0 Adc. VCE ~ 2.0 Vdc) «T MHz 20 SVMBOL Tvr. UNIT Turn-On Tim* llc = 260 mA/VCE - 2 V) BO775-777-779 B0776- 778-780 <on 250 250 ISO nt Turn Oft Tim* (lc - 2SO mA. VCE - 2 V) BO77f>777-77» 8O776-778-780 toll IM 600 400