Order this document by BD789/D SEMICONDUCTOR TECHNICAL DATA " ! . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 VCEO(sus) = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc • High Current Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc) *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 15 WATTS *MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol BD789 BD790 BD791 BD792 Unit VCEO 80 100 Vdc VCB 80 100 Vdc VEBO 6.0 Vdc Collector Current — Continuous — Peak IC 4.0 8.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 0.12 Watts W/_C TJ,Tstg – 65 to + 150 _C Operating and Storage Junction Temperature Range CASE 77–08 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 8.34 _C/W 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 100 120 80 T, TEMPERATURE (°C) 140 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case 0 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 80 100 — — — — 100 100 — — — — 1.0 1.0 0.1 0.1 — 1.0 40 20 10 5.0 250 — — — — — — — 0.5 1.0 2.5 3.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) VCEO(sus) BD789, BD790 BD791, BD792 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BD789, BD790 BD791, BD792 Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1 5 Vdc, TC = 125_C) (VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) BD789, BD790 BD791, BD792 BD789, BD790 BD791, BD792 Vdc µAdc ICEO ICEX Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO µAdc mAdc µAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 200 mAdc, VCE = 3 0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE — Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) — 1.8 Vdc Base–Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc) VBE(on) — 1.5 Vdc fT 40 — MHz — — 50 70 10 — Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 0.1 MHz) Cob BD789, BD791 BD790, BD792 Small–Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle hfe 500 300 200 RC + 11 V TJ = 25°C VCC = 30 V IC/IB = 10 SCOPE – 9.0 V v tr, tf 10 ns DUTY CYCLE = 1.0% 51 D1 –4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg MBR340 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. [ [ Figure 2. Switching Time Test Circuit 2 t, TIME (ns) 100 RB 0 — 2.0%. + 30 V VCC 25 µs pF 70 50 tr 30 20 10 7.0 5.0 0.04 td @ VBE(off) = 5.0 V BD789, 791 (NPN) BD790, 792 (PNP) 0.06 0.1 1.0 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 Figure 3. Turn–On Time Motorola Bipolar Power Transistor Device Data 4.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 0.02 t1 0.01 0.03 0.02 0 (SINGLE PULSE) 0.01 0.02 0.05 0.1 t2 DUTY CYCLE, D = t1/t2 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 RθJC(t) = r(t) RθJC RθJC = 8.34°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 20 50 100 200 Figure 4. Thermal Response 10 100 µs IC, COLLECTOR CURRENT (AMP) 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms 2.0 500 µs dc 1.0 TJ = 150°C 0.5 5.0 ms BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 0.05 v BD789 (NPN) BD790 (PNP) BD791 (NPN) BD792 (PNP) 0.02 0.01 1.0 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 2000 200 ts C, CAPACITANCE (pF) t, TIME (ns) 700 500 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 1000 300 200 100 70 50 30 20 0.04 0.06 Figure 6. Turn–Off Time Motorola Bipolar Power Transistor Device Data 70 50 Cob BD789, 791 (NPN) BD790, 792 (PNP) 20 BD789, 791 (NPN) BD790, 792 (PNP) 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) Cib 30 tf 0.1 100 2.0 4.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 7. Capacitance 3 NPN BD789, BD791 NPN BD790, BD792 500 200 VCE = 1.0 V VCE = 3.0 V TJ = 150°C 300 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25°C 100 70 50 – 55°C 30 20 7.0 5.0 0.04 0.06 100 TJ = 150°C 70 50 25°C VCE = 1.0 V VCE = 3.0 V – 55°C 30 20 10 7.0 5.0 3.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 2.0 0.04 0.06 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 1.4 TJ = 25°C TJ = 25°C 1.2 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 3.0 V 0.4 IC/IB = 10 0.2 0.6 0.4 1.0 0.6 VBE(on) @ VCE = 3.0 V IC/IB = 10 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 VBE(sat) @ IC/IB = 10 0.8 5.0 5.0 0.2 1.0 2.0 VCE(sat) 0 0.04 0.06 0.1 4.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) + 2.5 + 2.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 9. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 + 1.5 + 1.0 + 0.5 *θVC FOR VCE(sat) 0 – 55°C to 25°C – 0.5 – 1.0 – 1.5 – 2.0 25°C to 150°C 25°C to 150°C θVB FOR VBE – 2.5 0.04 0.06 0.1 – 55°C to 25°C 0.2 0.4 0.6 1.0 2.0 4.0 + 2.5 + 2.0 *APPLIES FOR IC/IB ≤ hFE/3 + 1.5 + 1.0 + 0.5 25°C to 150°C *θVC FOR VCE(sat) 0 – 55°C to 25°C – 0.5 – 1.0 – 1.5 25°C to 150°C θVB FOR VBE – 2.0 – 55°C to 25°C – 2.5 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients 4 Motorola Bipolar Power Transistor Device Data 4.0 PACKAGE DIMENSIONS –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77–08 TO–225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *BD789/D* BD789/D