tSe.tni-dona.u.cto'i LPioducti,
TELEPHONE: (973) 376-2922
(212) 227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BD789
Complementary Plastic Silicon
Power Transistors
BD791'
PNP
. . . designed for low power audio amplifier and low-current, high speed switching
applications.
BD79O
•
High Collector-Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Win) — BD789, BD790
= 100 Vdc (Min) — BD791, BD792
• High DC Current Gain @ IQ = 200 mAdc
hpE = 40-250
• Low Collector-Emitter Saturation Voltage —
VcE(sat) = O- 5 Vdc (Max) @ 'C = 500 mAdc
• High Current Gain — Bandwidth Product —
ft = 40 MHz (Min) @ IQ = 100 mAdc)
BD792*
•Motorola Preferred Device
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
15 WATTS
•MAXIMUM RATINGS
Rating
BD791
BD792
Unit
80
100
Vdc
80
100
Symbol
BD789
BD790
VCEO
Collector-Emitter Voltage
VCB
Collector-Base Voltage
Emitter-Base Voltage
Vdc
Vdc
VEBO
6.0
Collector Current — Continuous
— Peak
ic
4.0
8.0
Adc
Base Current
IB
PD
1.0
Adc
15
0.12
Watts
W/°C
-65 to +150
°C
Total Power Dissipation @ TQ = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Wstg
TO-2Z5AA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Rejc
8.34
°C/W
Thermal Resistance, Junction to Case
IB
1.2
\
o
\
0.8 a -
I
o
^S
o
^
s
V
o
**
CO
x
ro
^^
•z.
20
0.4
\
1
\b0
o
Pp. POWER DISSIPATION (WATTS)
^^ s
40
60
80
100
120
I TEMPERATURE ('C)
140
160
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BD789 BD791 BD790 BD792
*ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
100
—
—
100
100
—
1.0
1.0
0.1
0.1
Unit
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter Sustaining Voltage (1)
(IC = 10mAdc, lB = 0)
BD789, BD790
BD791 , BD792
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
BD789, BD790
BD791 , BD792
Collector Cutoff Current
(VCE = 80 Vd°. vBE(off) = 1 -5 Vdc)
(VCE = 1 °° Vdc. vBE(off) = 1 -5 Vdc)
(VCE = 40 Vdc, VBE(O(T) = 1 5 Vdc, Tc = 1 25°C)
(VcE = 50 Vdc, VBE(off) = 1 -5 Vdc, Tc = 125°C)
BD789, BD790
BD791 , BD792
BD789, BD790
BD791 , BD792
Vdc
HAdc
'CEO
ICEX
IEBO
Emitter Cutoff Current (VEB = 6.0 Vdc, Ic = 0)
—
1.0
40
20
10
5.0
250
nAdc
mAdc
HAdc
ON CHARACTERISTICS (1)
DC Current Gain
(1C = 200 mAdc, VCE = 30 Vdc)
0C = 1.0 Adc, VCE = 3.0 Vdc)
hFE
(IC = 4.0 Adc, VCE = 3-° Vdc)
Vdc
Collector Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(l c = 1.0 Adc, IB = 100 mAdc)
(lc = 2.0 Adc, IB = 200 mAdc)
(lc = 4.0 Adc, IB = 800 mAdc)
VcE(sat)
Base-Emitter Saturation Voltage (lc = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
_
1.8
Vdc
Base-Emitter On Voltage 0c = 200 mAdc, VCE = 3-°Vdc)
VBE(on)
—
1.5
Vdc
IT
40
—
MHz
Cob
_
0.5
1.0
2.5
3.0
—
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(lc = 100 mAdc, VCE = 10 Vdc, f = 10MHz)
Output Capacitance
(VcB = 10 Vdc, lc = 0, f=0.1 MHz)
BD789, BD791
BD790, BD792
Small-Signal Current Gain
(lc = 200 mAdc, VCE = 10 Vdc. f = 1 -° kHz)
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width s 300 (is, Duty Cycle
PF
50
70
10
hfe
—
2.0%.
•30V
H 25 us |—
+ 11 V
SCOPE
-9.0V
tr, tf £ 10 ns
DUTY CYCLE = 1.0%
R B AND Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS
DT MUST BE FAST RECOVERY TYPE, eg
MBR340 USED ABOVE IB - 100 mA
MSD6100 USED BELOW IB - 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
Figure 2, Switching Time Test Circuit
BD789, 791 (NPN)
BD790, 792 (PNP)
5.0
0.04
0.06 0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn-On Time