ON BD810G Plastic high power silicon transistor Datasheet

BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
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Features
•DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
•Pb-Free Packages are Available*
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
80
Vdc
Collector-Base Voltage
VCBO
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
90
720
W
W/°C
TJ, Tstg
-55 to +150
°C
Operating and Storage Junction
Temperature Range
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
1
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
Max
Unit
qJC
1.39
°C/W
2
TO-220AB
CASE 221A-09
STYLE 1
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BD8xxG
AY WW
BD8xx
=
A
Y
WW
G
=
=
=
=
Device Code
x = 09 or 10
Assembly Location
Year
Work Week
Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 4
1
Publication Order Number:
BD809/D
BD809 (NPN), BD810 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
Min
Max
Unit
-
Vdc
80
-
1.0
-
2.0
30
15
-
BVCEO
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
DC Current Gain
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
hFE
mAdc
mAdc
Collector-Emitter Saturation Voltage (Note 1)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
-
1.1
Vdc
Base-Emitter On Voltage (Note 1)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
VBE(on)
-
1.6
Vdc
fT
1.5
-
MHz
Current-Gain Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
1 ms
5 ms
10
3
.5 ms
1 ms
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
90
dc
1
0.3
0.1
1
3
10
30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80
70
60
50
40
30
20
10
0
100
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
Figure 2. Power-Temperature Derating Curve
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2
BD809 (NPN), BD810 (PNP)
NPN
BD809
PNP
BD810
500
500
TJ = 150°C
100
-55°C
50
20
VCE = 2.0 V
10
5.0
0.2
0.5
TJ = 150°C
200
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
200
25°C
100
-55°C
50
20
10
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
5.0
20
VCE = 2.0 V
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
20
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
1.0
IC = 1.0 A
0.8
4.0 A
8.0 A
0.6
0.4
0.2
0
5.0
10
20
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
IC = 1.0 A
1.0
4.0 A
8.0 A
0.8
0.6
0.4
0.2
0
5.0
10
20
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
Figure 4. Collector Saturation Region
2.8
2.8
V, VOLTAGE (VOLTS)
2.0
1.6
1.2
VBE(sat) = IC/IB = 10
0.8
2.0
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
TJ = 25°C
2.4
V, VOLTAGE (VOLTS)
TJ = 25°C
2.4
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
2.0
5.0
10
20
0.2
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
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3
10
20
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
BD809 (NPN), BD810 (PNP)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.07
0.05
0.1
qJC(t) = r(t) qJC
0.02
0.03
0.02
0.01
0.01
SINGLE P(pk)
PULSE
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
SINGLE PULSE
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, PULSE WIDTH (ms)
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
Figure 6. Thermal Response
Note 1:
The data of Figure 1 is based on T J(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
ORDERING INFORMATION
Device
BD809
BD809G
BD810
BD810G
Package
Shipping†
TO-220
TO-220
(Pb-Free)
50 Units / Rail
TO-220
TO-220
(Pb-Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BD809 (NPN), BD810 (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
-TB
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BD809/D
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