CDIL BD949 Npn plastic power transistor Datasheet

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
BD949, 951, 953, 955
BD950, 952, 954, 956
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Power Amplifier and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
B
C
E
A
O
3
J
D
G
M
All dimin sions in mm.
K
L
N
1 2
O
H
F
DIM
MIN .
A
B
C
D
E
F
G
H
J
K
L
M
N
O
14.42
9.63
3.56
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
VCEO
Collector current
IC
Total power dissipation up to Tmb = 25°C Ptot
Junction temperature
Tj
Collector-emitter saturation voltage
VCEsat
IC = 2 A; IB = 0.2 A
D.C. current gain
hFE
IC = 2 A; VCE = 4 V
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Continental Device India Limited
VCBO
VCEO
VEBO
IC
Data Sheet
3
MAX.
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DEG 7
949
950
max. 60
max. 60
max.
max.
max.
951 953
952 954
80 100
80 100
5.0
40
150
max.
1.0
min.
20
949
950
max. 60
max. 60
max.
max.
951 953
952 954
80 100
80 100
5.0
5.0
955
956
120
120
V
V
A
W
°C
V
955
956
120
120
V
V
V
A
Page 1 of 3
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
Collector current (Peak value)
Total power dissipation upto Tmb =25°C
Junction temperature
Storage temperature
ICM
Ptot
Tj
Tstg
THERMAL RESISTANCE
From junction to ambient
From junction to mounting base
Rth j–a
Rth j–mb
max.
max.
max.
70
3.12
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = VCBO
IE = 0; VCB = ½ VCBO; Tj = 150°C
IB = 0; VCE = ½ VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 2 A; VCE = 4 V
D.C. current gain
IC = 0.5 A; VCE = 4 V
IC = 2 A; VCE = 4 V
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = –IBoff = 0.1A
RL = 20Ω
Turn on time
NPN
Turn off time
NPN
PNP
PNP
8.0
40
150
–65 to +150
949
950
951
952
953
954
A
W
°C
°C
K /W
K /W
955
956
ICBO
ICBO
ICEO
max.
max.
max.
50
1.0
0.1
µA
mA
mA
IEBO
max.
0.2
mA
VCEO
VCBO
VEBO
min. 60
min. 60
min.
VCEsat*
max.
1.0
V
VBE(on)*
max.
1.4
V
hFE*
min.
40
hFE*
min.
20
fT
min.
3
ton
toff
ton
toff
typ.
typ.
typ.
typ.
0.3
1.5
0.1
0.4
80
80
100
100
5.0
120
120
V
V
V
MHz
µs
µs
µs
µs
* Measured under pulse conditions: tp ≤ 300µs; duty cycle ≤ 2%
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
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neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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