SavantIC Semiconductor Product Specification BD953 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V 5 A 40 W IC Collector current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification BD953 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 50 µA IEBO Emitter cut-off current VEB=7V; IC=0 50 µA hFE-1 DC current gain IC=0.5A ; VCE=4V 40 hFE-2 DC current gain IC=2A ; VCE=4V 20 Transition frequency IC=0.5A ; VCE=4V 3 fT CONDITIONS 2 MIN TYP. MAX UNIT MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 BD953