BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD SEME LAB MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1.0 2 .5 4 BSC 2. 70 BSC • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS 3 .6 0 (0 .1 4 2 ) M a x . • FULLY ISOLATED (METAL VERSION) 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) TO220M - TO220 Metal Package - Isolated SMD1 - Ceramic Surface Mount Package Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS10 VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 60V 60V BDS11 BDS12 80V 100V 80V 100V 5V 15A 5A 90W –65 to 200°C 200°C Prelim. 7/00 BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD SEME LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions ICBO Collector cut-off current (IE = 0) ICEO Collector cut-off current (IB = 0) IEBO Emitter cut-off current (IC = 0) VCEO(sus)* VCE(sat)* VBE(sat)* VBE* hFE* fT BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 Min. Typ. Max. VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V 500 500 500 1 1 1 VEB = 5V BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current gain IC = 5A IC = 10A Transition frequency IC = 0.5A mA mA mA 1 IC = 100mA Unit 60 80 100 V IB = 0.5A IB = 2.5A 1 3 V IB = 2.5A 2.5 V VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V 1.5 250 150 V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions Max. IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A 0.7 1.0 0.8 Unit ms ms ms THERMAL DATA RTHj-case Thermal resistance junction - case Max. 1.4°C/W RTHcase-sink Thermal resistance case - heatsink ** Typ. 1.0°C/W RTHj-a Thermal resistance junction - ambient Max. 80°C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00