Comset BDT81 Silicon power transistor Datasheet

PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
SILICON POWER TRANSISTOR
The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.
They are intended for use in audio output stages and general amplifier and switching appications.
NPN complements are BDT81 – BDT83 – BDT85 – BDT87.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
-VCEO
Collector-Emitter Voltage
-IB = 0
-VCBO
Collector-Base Voltage
-IE = 0
-VEBO
Emitter-Base Voltage
-IC = 0
-IC
Collector Current
-ICM
Collector Peak Current
-IB
Base Current
Pt
Total Power Dissipation
@ TC = 25°
COMSET SEMICONDUCTORS
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Unit
60
80
100
120
60
80
100
120
V
V
7
V
15
A
20
A
4
A
125
Watts
1/3
PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
Symbol
Ratings
TJ
Junction Temperature
TStg
Storage Temperature
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Value
Unit
150
°C
-65 to +150
°C
Value
Unit
70
1
K/W
K/W
THERMAL CHARACTERISTICS
Symbol
RthJa
RthJmb
Ratings
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICB0
Collector Cutoff Current
-ICES
Collector Cutoff Current
-IEBO
Emitter Cutoff Current
-IE=0A , -VCB=60 V
-IE=0A , -VCB=80 V
-IE=0A , -VCB=100 V
-IE=0A , -VCB=120 V
-VBE=0 , -VCE= 60V
-VBE=0 , -VCE= 80V
-VBE=0 , -VCE= 100V
-VBE=0 , -VCE= 120V
-VEB=7.0 V, -IC=0
-IC=50 m A , -VCE=10 V
HFE
DC Current Gain (1)
-IC=5 A , -VCE=4.0 V
-IC=5 A , -IB=0.5 A
-VCE(SAT)
Collector-Emitter
saturation Voltage (1)
-IC=7 A , -IB=0.7 A
COMSET SEMICONDUCTORS
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Min Typ Mx Unit
-
-
0.2
0.2
0.2
0.2
1
1
1
1
-
-
0.1
40
-
-
mA
mA
mA
40
-
-
-
-
1
V
-
-
1.6
2/3
PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
-VBE
Base-Emitter voltage (1)
Symbol
-IC=5 A , -VCE=4 V
Ratings
Test Condition(s)Sec
Second breakdown collector
current
Transition frequency
Turn-on time
Turn-off time
-IS/B
fT
ton
Toff
BDT82
BDT84
BDT86
BDT88
-VCE=50 V , tP = 100 ms
-VCE=10 V , -IC=0.5 A , f=1 MHz
-IC=7 A , -IB1 = IB2 =0.7 A
-IC=7 A , -IB1 = IB2 =0.7 A
-
-
1.5
Min Typ Mx Unit
2.5
-
-
A
-
20
-
1
2
MHz
(1) Pulse Duration = 300 µs, δ <= 2%
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,86
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
1,36
0,46
2,1
5
2,52
0,79
inches
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
Base
Collector
Emitter
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
V
3/3
µs
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