ISC BDT96F Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BDT92F/94F/96F
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= -4A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT92F; -80V(Min)- BDT94F;
-100V(Min)- BDT96F
·Complement to Type BDT91F/93F/95F
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
VALUE
BDT92F
-60
BDT94F
-80
BDT96F
-100
BDT92F
-60
BDT94F
-80
BDT96F
-100
UNIT
V
V
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation
@ TC=25℃
32
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
6.4
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BDT92F/94F/96F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT92F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT94F
MIN
TYP.
MAX
UNIT
-60
IC= -100mA ; IB= 0
V
-80
-100
BDT96F
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -3.3A
-3
V
VBE(on)
Base-Emitter On Voltage
IC= -4A; VCE= -4V
-1.6
V
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB=1/2VCBOmax; IE= 0,TJ=150℃
-0.1
-1
mA
ICEO
Collector Cutoff Current
VCE= VCEOmax V; IB= 0
-0.2
mA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-0.1
mA
hFE-1
DC Current Gain
IC= -4A ; VCE= -4V
20
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
5
Current-Gain—Bandwidth Product
IC= -500mA ; VCE= -10V
4
fT
B
200
MHz
Switching times
ton
Turn-On Time
0.5
1.5
μs
1
3
μs
IC= -4A; IB1= -IB2= -0.4A
toff
Turn-Off Time
isc Website:www.iscsemi.cn
2
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