DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). BF510 to 513 MARKING CODE BF510 = S6p BF511 = S7p BF512 = S8p BF513 = S9p handbook, halfpage 3 g PINNING - SOT23 1 = gate 2 = drain 3 = source 1 d s 2 Top view MAM385 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Drain current (DC or average) ID max. 30 mA Ptot max. 250 mW Total power dissipation up to Tamb = 40 °C BF510 511 512 > 0.7 2.5 6 10 mA < 3.0 7.0 12 18 mA yfs > 2.5 4 6 7 mS VDS = 10 V; VGS = 0 Crs typ. 0.3 0.3 − − pF VDS = 10 V; ID = 5 mA Crs typ. − − 0.3 0.3 pF VDS = 10 V; VGS = 0 F typ. 1.5 1.5 − − dB VDS = 10 V; ID = 5 mA F typ. − − 1.5 1.5 dB Drain current VDS = 10 V; VGS = 0 IDSS 513 Transfer admittance (common source) VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz December 1997 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± IG max. 10 mA Total power dissipation up to Tamb = 40 °C (note 1) Ptot max. 250 mW Storage temperature range Tstg −65 to + 150 °C Junction temperature Tj max. 150 °C Rth j-a = 430 K/W THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tamb = 25 °C BF510 511 512 513 Gate cut-off current −VGS = 0.2 V; VDS = 0 −IGSS < 10 10 10 10 nA −V(BR)GDO > 20 20 20 20 V IDSS > < 0.7 3.0 2.5 7.0 6 12 10 mA 18 mA −V(P)GS typ. 0.8 1.5 2.2 3 V Gate-drain breakdown voltage IS = 0; −ID = 10 µA Drain current VDS = 10 V; VGS = 0 Gate-source cut-off voltage ID = 10 µA; VDS = 10 V December 1997 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DYNAMIC CHARACTERISTICS Measuring conditions (common source): VDS = 10 V; VGS = 0; Tamb = 25 °C for BF510 and BF511 VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF512 and BF513 y-parameters (common source) Input capacitance at f = 1 MHz Cis < Input conductance at f = 100 MHz gis typ. Feedback capacitance at f = 1 MHz Crs Transfer admittance at f = 1 kHz 511 512 5 5 5 513 5 pF 100 90 60 50 µS typ. 0.4 0.4 0.4 0.4 pF < 0.5 0.5 0.5 0.5 pF yfs > 2.5 4.0 4.0 3.5 mS yfs > Transfer admittance at f = 100 MHz yfs typ. Output capacitance at f = 1 MHz Cos Output conductance at f = 1 MHz Output conductance at f = 100 MHz VGS = 0 instead of ID = 5 mA BF510 − − 6.0 7.0 mS 3.5 5.5 5.0 5.0 mS < 3 3 3 3 pF gos < 60 80 100 120 µS gos typ. 35 55 70 90 µS F typ. 1.5 1.5 1.5 1.5 dB Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz MDA275 1.5 MDA276 10 |yfs| handbook, halfpage handbook, halfpage Crs BF513 (mS) 8 (pF) BF511 BF512 1 6 BF510 4 0.5 typ 2 0 0 Fig.2 4 8 12 16 0 20 VDS (V) 0 VGS = 0 for BF510 and BF511; ID = 5 mA for BF512 and BF513; f = 1 MHz; Tamb = 25 °C. December 1997 Fig.3 4 5 10 ID (mA) 15 VDS = 10 V; f = 1 kHz; Tamb = 25 °C; typical values. Philips Semiconductors Product specification N-channel silicon field-effect transistors MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 40 0 80 120 200 160 Tamb (°C) Fig.4 Power derating curve. December 1997 5 BF510 to 513 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 December 1997 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 7