PHILIPS BF556B N-channel silicon junction field-effect transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF556A; BF556B; BF556C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
FEATURES
• Low leakage level (typ. 500 fA)
• High gain
handbook, halfpage
2
1
• Low cut-off voltage.
d
g
s
APPLICATIONS
• Impedance converters in e.g. electret microphones and
infra-red detectors
3
Top view
• VHF amplifiers in oscillators and mixers.
MAM036
Marking codes:
BF556A: M84.
BF556B: M85.
BF556C: M86.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
Fig.1 Simplified outline and symbol.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate‘
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
±30
V
−0.5
−7.5
V
3
7
mA
BF556B
6
13
mA
BF556C
11
18
mA
VDS
drain-source voltage (DC)
VGSoff
gate-source cut-off voltage
ID = 200 µA; VDS = 15 V
IDSS
drain current
VGS = 0; VDS = 15 V
BF556A
Ptot
total power dissipation
up to Tamb = 25 °C
−
250
mW
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
4.5
−
mS
1996 Jul 29
2
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
±30
V
VGSO
gate-source voltage
open drain
−
−30
V
VGDO
gate-drain voltage (DC)
open source
−
−30
V
IG
forward gate current (DC)
−
10
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
150
°C
Tj
operating junction temperature
−
150
°C
up to Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
500
K/W
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
gate-source breakdown voltage IG = −1 µA; VDS = 0
VGSoff
gate-source cut-off voltage
ID = 200 µA; VDS = 15 V
IDSS
drain current
VGS = 0; VDS = 15 V
MIN.
−30
TYP.
−
−0.5
MAX.
UNIT
−
V
−7.5
V
BF556A
3
−
7
mA
BF556B
6
−
13
mA
BF556C
11
−
18
mA
IGSS
gate leakage current
VGS = −20 V; VDS = 0
−
−0.5
−5000
pA
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
4.5
−
−
mS
yos
common source output
admittance
VGS = 0; VDS = 15 V
−
40
−
µS
1996 Jul 29
3
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
DYNAMIC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Cis
input capacitance
Crs
reverse transfer capacitance
common source input conductance
gis
TYP.
UNIT
VDS = 15 V; VGS = −10 V; f = 1 MHz
1.7
pF
VDS = 15 V; VGS = 0; f = 1 MHz
3
pF
VDS = 15 V; VGS = −10 V; f = 1 MHz
0.8
pF
VDS = 15 V; VGS = 0; f = 1 MHz
0.9
pF
VDS = 10 V; ID = 1 mA; f = 100 MHz
15
µS
VDS = 10 V; ID = 1 mA; f = 450 MHz
300
µS
gfs
common source transfer conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
2
mS
VDS = 10 V; ID = 1 mA; f = 450 MHz
1.8
mS
grs
common source reverse conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
−6
µS
VDS = 10 V; ID = 1 mA; f = 450 MHz
−40
µS
VDS = 10 V; ID = 1 mA; f = 100 MHz
30
µS
VDS = 10 V; ID = 1 mA; f = 450 MHz
60
µS
VDS = 10 V; ID = 1 mA; f = 100 Hz
40
nV/√Hz
common source output conductance
gos
equivalent input noise voltage
Vn
MRC156
MRC154
handbook, 10
halfpage
handbook, 20
halfpage
Yfs
(mS)
IDSS
(mA)
16
8
12
6
8
4
4
2
0
0
0
1
2
3
4
5
6
7
0
1
VGSoff (V)
2
3
4
5
6
7
VGSoff (V)
VDS = 15 V; ID = 1 µA.
VDS = 15 V.
Fig.3
Fig.2
Drain current as a function of gate-source
cut-off voltage; typical values.
1996 Jul 29
4
Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC153
100
Gos
MRC155
300
handbook, halfpage
handbook, halfpage
(µS)
RDSon
80
(Ω)
200
60
40
100
20
0
0
−2
−4
0
−6
−8
VGSoff (V)
0
2
4
6
VDS = 15 V.
VDS = 100 mV; VGS = 0.
Fig.4
Fig.5
Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
MRC145
5
handbook, halfpage
MRC146
16
VGS = 0 V
ID
(mA)
8
VGSoff (V)
handbook, halfpage
ID
(mA)
4
VGS = 0 V
12
−0.5 V
3
−0.5 V
−1.0 V
8
2
−1.5 V
−1 V
−2.0 V
4
1
−2.5 V
0
0
4
8
12
0
16
0
VDS (V)
8
12
16
VDS (V)
Fig.6 Typical output characteristics; BF556A.
1996 Jul 29
4
Fig.7 Typical output characteristics; BF556B.
5
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC147
25
MRC148
30
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
VGS = 0 V
20
15
BF556C
20
−1 V
−2 V
BF556B
10
10
−3 V
5
−4 V
BF556A
−5 V
0
0
4
8
12
0
−6
16
−4
−2
0
VGS (V)
VDS (V)
VDS = 15 V.
Fig.8 Typical output characteristics; BF556C.
Fig.9 Typical input characteristics.
MRC149
3
10halfpage
handbook,
I
MRC151
−102
handbook, halfpage
D
(µA)
102
IG
(pA)
BF556C
BF556B
ID = 10 mA
−10
BF556A
1 mA
10
−1
1
IGSS
10−1
−10−1
0.1 mA
10−2
10−3
−8
−6
−4
−2
VGS (V)
−10−2
0
0
4
8
12
16
20
VDG (V)
VDS = 15 V.
ID = 10 mA only for BF556B and BF556C.
Fig.10 Drain current as a function of gate-source
voltage; typical values.
Fig.11 Gate current as a function of drain-gate
voltage; typical values.
1996 Jul 29
6
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC150
103
handbook, halfpage
MRC166
300
IGSS
(pA)
Ptot
(mW)
102
200
10
100
1
10−1
−50
0
50
100
00
150
50
100
Tj (°C)
Tamb ( oC)
150
VDS = 0; VGS = −20 V.
Fig.12 Gate current as a function of junction
temperature; typical values.
Fig.13 Power derating curve.
MRC134
1
handbook, halfpage
MRC140
3
handbook, halfpage
C rs
(pF)
C is
(pF)
0.8
2
0.6
0.4
1
0.2
0
–10
–8
–6
–4
–2
0
–10
0
VGS (V)
VDS = 15 V.
–6
–4
–2
0
VGS (V)
VDS = 15 V.
Fig.14 Reverse transfer capacitance; typical values.
1996 Jul 29
–8
Fig.15 Input capacitance; typical values.
7
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC142
102
handbook, halfpage
MRC141
10
handbook, halfpage
gis, bis
(mS)
gfs, −bfs
10
(mS)
gfs
bis
1
1
−bfs
gis
10−1
10−2
10
102
10−1
10
103
f (MHz)
102
103
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.16 Common-source input admittance; typical
values.
Fig.17 Common-source transfer admittance;
typical values.
MRC143
MRC144
−10
10
handbook, halfpage
handbook, halfpage
brs, grs
bos, gos
(mS)
(mS)
brs
−1
bos
1
−10−1
10−1
grs
gos
−10−2
−10−3
10
10−2
102
f (MHz)
103
10
102
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.18 Common-source reverse admittance;
typical values.
Fig.19 Common-source output admittance;
typical values.
1996 Jul 29
8
103
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC278
10 3
handbook, halfpage
Vn
(V)
10 2
10
1
10
10
2
10 3
10 4
f (Hz)
10 5
VDS = 10 V; ID = 1 mA.
Fig.20 Equivalent noise voltage as a function of
frequency.
1996 Jul 29
9
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
PACKAGE OUTLINE
3.0
2.8
handbook, full pagewidth
0.55
0.45
0.150
0.090
B
1.9
0.95
2
1
0.1
max
10 o
max
0.2 M A
A
1.4
1.2
2.5
max
10 o
max
3
1.1
max
30 o
max
0.48
0.38
0.1 M A B
TOP VIEW
Dimensions in mm.
Fig.21 SOT23.
1996 Jul 29
10
MBC846
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 29
11
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