PHILIPS BF585 Npn high-voltage transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF585; BF587
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 21
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
2
3
DESCRIPTION
NPN transistors in a TO-202; SOT128B plastic package.
PNP complement: BF588.
1
PINNING
1
2
3
MBH793
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1
Simplified outline (TO-202; SOT128B)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
BF587
collector-emitter voltage
MAX.
UNIT
open emitter
BF585
VCEO
MIN.
−
350
V
−
400
V
−
300
V
−
350
V
−
5
V
open base
BF585
BF587
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
in free air; Tamb ≤ 25 °C
−
1.6
W
in free air; Tmb ≤ 25 °C
−
5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
1999 Apr 21
open collector
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
78
K/W
Rth j-mb
thermal resistance from junction to mounting base
25
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 300 V
−
20
nA
IE = 0; VCB = 250 V; Tj = 150 °C
−
20
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
100
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
−
IC = 40 mA; VCE = 20 V
20
−
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5 mA
−
600
mV
Cc
collector capacitance
IE = ie = 0; VCB = 30 V; f = 1 MHz
−
2.5
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 30 V; f = 1 MHz
−
1.8
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V
70
110
MHz
1999 Apr 21
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
E1
c1
P
P1
HE
D
L1
L2
L
1
2
3
bp
c
w M
Q
e1
A
e
E
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
c1
D
E
E1
e
e1
HE
L
L1
L2(1)
max
P
P1
Q
w
mm
4.6
4.4
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
5.08
2.54
24.2
23.8
13.3
12.2
2.4
2.0
2.5
3.8
3.6
3.9
3.7
1.7
1.5
0.25
Note
1. Plastic flash allowed within this zone
OUTLINE
VERSION
SOT128B
1999 Apr 21
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
TO-202
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 21
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
NOTES
1999 Apr 21
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF585; BF587
NOTES
1999 Apr 21
7
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SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 21
Document order number:
9397 750 05412
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