Siemens BF841 Npn silicon rf transistors (suitable for common emitter rf, if amplifiers low collector-base capacitance due to contact shield diffusion) Datasheet

NPN Silicon RF Transistors
BF 840
BF 841
●
Suitable for common emitter RF, IF amplifiers
●
Low collector-base
capacitance due to contact shield diffusion
●
Low output conductance
Type
Marking
Ordering Code
Pin Configuration
1
2
3
Package1)
BF 840
BF 841
NC
ND
Q62702-F1240
Q62702-F1287
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
40
V
Collector-base voltage
VCB0
40
Emitter-base voltage
VEB0
4
Collector current
IC
25
Base current
IB
2
Total power dissipation, TA ≤ 25 ˚C2)
Ptot
280
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Rth JA
≤
mA
Thermal Resistance
Junction - ambient2)
1)
2)
450
K/W
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 840
BF 841
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR) CE0
40
–
–
Emitter-base breakdown voltage
IE = 10 µA, IB = 0
V(BR) EB0
4
–
–
Collector-base cutoff current
VCB = 20 V, IE = 0
ICB0
–
–
100
DC current gain, IC = 1 mA, VCE = 10 V
BF 840
BF 841
hFE
Base-emitter voltage
IC = 1 mA, VCE = 10 V
V
nA
–
65
35
–
–
220
125
VBE
–
0.7
–
V
Transition frequency
IC = 1 mA, VCE = 10 V, f = 100 MHz
fT
–
380
–
MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
–
0.3
–
pF
Noise figure
IC = 1 mA, VCE = 10 V, f = 100 kHz
RS = 200 Ω
F
–
1.7
–
dB
Output conductance
IC = 1 mA, VCE = 10 V, f = 0.5 MHz
g22e
–
4
–
µS
AC Characteristics
Semiconductor Group
2
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