BFN16, BFN18 NPN Silicon High-Voltage Transistors 1 Suitable for video output stages in TV sets and 2 switching power supplies 3 High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN17, BFN19 (PNP) 2 VPS05162 Type Marking Pin Configuration Package BFN16 DD 1=B 2=C 3=E SOT89 BFN18 DE 1=B 2=C 3=E SOT89 BFN16 BFN18 Maximum Ratings Parameter Symbol Unit Collector-emitter voltage VCEO 250 300 Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN16, BFN18 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN16 250 - - BFN18 300 - - BFN16 250 - - BFN18 300 - - 5 - - V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE = 100 µA, IC = 0 Collector cutoff current nA ICBO VCB = 200 V, IE = 0 BFN16 - - 100 VCB = 250 V, IE = 0 BFN18 - - 100 Collector cutoff current µA ICBO VCB = 200 V, IE = 0 , TA = 150 °C BFN16 - - 20 VCB = 250 V, IE = 0 , TA = 150 °C BFN18 - - 20 - - 100 Emitter cutoff current IEBO nA VEB = 3 V, IC = 0 DC current gain 1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - BFN16 40 - - BFN18 30 - - IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA V VCEsat BFN16 - - 0.4 BFN18 - - 0.5 - - 0.9 Base-emitter saturation voltage 1) VBEsat IC = 20 mA, IB = 2 mA 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 BFN16, BFN18 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 70 - MHz Ccb - 2.5 - pF AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 3 Nov-30-2001 BFN16, BFN18 Operating range I C = f (VCEO) Total power dissipation Ptot = f(TS) TA = 25°C, D = 0 10 3 1.2 BFN 16/18 EHP00580 mA ΙC W 10 µ s P tot 10 2 5 0.8 100 µ s 1ms 100 ms 10 1 0.6 5 DC 0.4 10 0 5 0.2 0 0 15 30 45 60 75 90 105 120 10 -1 10 0 °C 150 TS 5 10 1 5 10 2 Collector current I C = f (VBE) Ptotmax / PtotDC = f (tp ) VCE = 10V BFN 16/18 Ptot max 5 Ptot DC EHP00581 D= tp T 10 3 V CEO Permissible pulse load 10 3 V 5 10 3 BFN 16/18 EHP00582 mA tp ΙC T 10 2 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 1 5 10 0 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 -1 10 0 tp 0 0.5 V 1.0 1.5 V BE 4 Nov-30-2001 BFN16, BFN18 Transition frequency fT = f (IC) Collector cutoff current ICBO = f (T A) VCE = 10V VCB = 200V 10 3 fT BFN 16/18 EHP00583 10 4 nA BFN 16/18 EHP00584 MHz Ι CBO max 10 3 5 10 2 5 10 2 typ 10 1 5 5 10 0 5 10 1 10 0 5 10 1 5 10 2 mA 5 10 -1 10 3 ΙC 0 50 ˚C 100 150 TA DC current gain hFE = f (IC ) VCE = 10V 10 3 BFN 16/18 EHP00585 5 h FE 10 2 5 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001