Siemens BFN18 Npn silicon high-voltage transistors (suitable for video output stages in tv sets and switching power supplies high breakdown voltage) Datasheet

NPN Silicon High-Voltage Transistors
BFN 16
BFN 18
Suitable for video output stages in TV sets
and switching power supplies
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BFN 17, BFN 19 (PNP)
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
BFN 16
BFN 18
DD
DE
Q62702-F885
Q62702-F1056
B
SOT-89
C
E
Maximum Ratings
Parameter
Symbol
BFN 16
Values
BFN 18
Unit
Collector-emitter voltage
VCE0
250
300
Collector-base voltage
VCB0
250
300
Emitter-base voltage
VEB0
Collector current
IC
200
Peak collector current
ICM
500
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 130 ˚C
Ptot
1
W
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
V
5
mA
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤
75
Junction - soldering point
Rth JS
≤
20
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BFN 16
BFN 18
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
BFN 16
BFN 18
V(BR)CE0
Collector-base breakdown voltage
IC = 100 µA
BFN 16
BFN 18
V(BR)CB0
Emitter-base breakdown voltage
IE = 100 µA
V(BR)EB0
Collector-base cutoff current
VCB = 200 V
VCB = 250 V
VCB = 200 V, TA = 150 ˚C
VCB = 250 V, TA = 150 ˚C
ICB0
BFN 16
BFN 18
BFN 16
BFN 18
Emitter-base cutoff current
VEB = 3 V
IEB0
DC current gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V1)
IC = 30 mA, VCE = 10 V1)
hFE
BFN 16
BFN 18
V
250
300
–
–
–
–
250
300
–
–
–
–
5
–
–
–
–
–
–
–
–
–
–
100
100
20
20
nA
nA
µA
µA
–
–
100
nA
25
40
40
30
–
–
–
–
–
–
–
–
–
–
–
–
0.4
0.5
–
V
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
BFN 16
BFN 18
VCEsat
Base-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat
–
–
0.9
Transition frequency
IC = 20 mA, VCE = 10 V, f = 20 MHz
fT
–
70
–
MHz
Output capacitance
VCB = 30 V, f = 1 MHz
Cobo
–
1.5
–
pF
AC characteristics
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BFN 16
BFN 18
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Operating range IC = f (VCE0)
TA = 25 ˚C, D = 0
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector current IC = f (VBE)
VCE = 10 V
Semiconductor Group
3
BFN 16
BFN 18
Transition frequency fT = f (IC)
VCE = 10 V
Collector cutoff current ICB0 = f (TA)
VCB = 200 V
DC current gain hFE = f (IC)
VCE = 10 V
Semiconductor Group
4
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