BFN25, BFN27 PNP Silicon High-Voltage Transistors 3 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage 2 Complementary types: BFN24, BFN26 (NPN) 1 Type Marking Pin Configuration BFN25 FKs 1=B 2=E 3=C SOT23 BFN27 FLs 1=B 2=E 3=C SOT23 BFN25 BFN27 VPS05161 Package Maximum Ratings Parameter Symbol Unit Collector-emitter voltage VCEO 250 300 Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN25, BFN27 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO BFN25 250 - - BFN27 300 - - BFN25 250 - - BFN27 300 - - 5 - - V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 V Emitter-base breakdown voltage V(BR)EBO IE = 100 µA, IC = 0 Collector cutoff current ICBO nA VCB = 200 V, IE = 0 BFN25 - - 100 VCB = 250 V, IE = 0 BFN27 - - 100 Collector cutoff current ICBO µA VCB = 200 V, IE = 0 , TA = 150 °C BFN25 - - 20 VCB = 250 V, IE = 0 , TA = 150 °C BFN27 - - 20 - - 100 Emitter cutoff current IEBO nA VEB = 3 V, IC = 0 DC current gain 1) hFE - IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - BFN25 40 - - BFN27 30 - - IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VCEsat V BFN25 - - 0.4 BFN27 - - 0.5 - - 0.9 Base-emitter saturation voltage 1) VBEsat IC = 20 mA, IB = 2 mA 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 BFN25, BFN27 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 100 - MHz Ccb - 2.5 - pF AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 3 Nov-30-2001 BFN25, BFN27 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 400 BFN 25/27 EHP00629 MHz mW fT P tot 300 250 10 2 200 150 5 100 50 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 5 10 1 5 10 2 mA 5 ΙC Permissible pulse load Operating range I C = f (VCEO) Ptotmax / PtotDC = f (tp ) TA = 25°C, D = 0 10 3 BFN 25/27 EHP00630 Ptot max 5 Ptot DC D= 10 3 BFN 25/27 EHP00631 mA tp tp T 10 3 ΙC T 10 2 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 µs 5 10 100 µs 1 ms 1 100 ms 5 DC 500 ms 10 0 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 10 0 0 tp 5 10 1 5 10 2 V 5 10 3 V CEO 4 Nov-30-2001 BFN25, BFN27 Collector current IC = f (VBE) Collector cutoff current ICBO = f (T A) VCE = 10 V VCB = 200V BFN 25/27 10 3 EHP00632 mA Ι CBO ΙC 10 4 nA BFN 25/27 EHP00633 max 10 3 5 10 2 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0.5 0 V 1.0 10 -1 1.5 V BE 0 50 100 ˚C 150 TA DC current gain hFE = f (IC ) VCE = 10V 10 3 BFN 25/27 EHP00634 5 h FE 10 2 5 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001