Infineon BFP182W Npn silicon rf transistor Datasheet

BFP182W
NPN Silicon RF Transistor
3
For low noise, high-gain broadband amplifiers at
4
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFP182W
RGs
Pin Configuration
1=E
2=C
3=E
Package
4=B
SOT343
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
Base current
IB
4
Total power dissipation
Ptot
250
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Value
Unit
V
mA
TS 91 °C 1)
Thermal Resistance
Junction - soldering point 2)
RthJS
235
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
Aug-09-2001
BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
50
100
200
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 10 mA, VCE = 8 V
2
Aug-09-2001
BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.3
0.45
Cce
-
0.27
-
Ceb
-
0.6
-
AC characteristics (verified by random sampling)
Transition frequency
GHz
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.2
-
f = 1.8 GHz
-
1.9
-
Gms
-
21.5
-
Gma
-
15.5
-
-
17.5
-
-
12
-
Power gain, maximum stable 1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available 2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
|S21e|2
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
1G
ms
2G
ma
= |S21 / S12 |
= |S21 / S12 | (k-(k2-1)1/2)
3
Aug-09-2001
BFP182W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
4.8499
fA
BF =
84.113
-
NF =
0.56639
-
VAF =
21.742
V
IKF =
0.14414
A
ISE =
8.4254
fA
NE =
0.91624
-
BR =
10.004
-
NR =
0.54818
-
VAR =
2.2595
V
IKR =
0.039478
A
ISC =
5.9438
fA
NC =
0.5641
-
RB =
3.4217
IRB =
0.071955
mA
RBM =
2.8263
RE =
2.1858
RC =
1.8159
CJE =
8.8619
fF
VJE =
1.0378
V
MJE =
0.40796
-
TF =
22.72
ps
XTF =
0.43147
-
VTF =
0.34608
V
ITF =
6.5523
mA
PTF =
0
deg
CJC =
490.25
fF
VJC =
1.0132
V
MJC =
0.31068
-
XCJC =
0.19281
-
TR =
1.7541
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.64175
-
TNOM
300
K
L BI =
0.43
nH
L BO =
0.47
nH
L EI =
0.26
nH
L EO =
0.12
nH
L CI =
0.06
nH
L CO =
0.36
nH
C BE =
68
fF
C CB =
46
fF
C CE =
232
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
BFP182W
Total power dissipation Ptot = f (TS )
300
P tot
mW
200
150
100
50
0
0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load
Permissible Pulse Load RthJS = f (tp )
Ptotmax/P totDC = f (tp)
10 2
Ptotmax / PtotDC
10 3
RthJS
K/W
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
Aug-09-2001
BFP182W
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
f = 1MHz
V CE = Parameter
0.5
10
10V
GHz
8V
pF
8
5V
3V
fT
Ccb
7
0.3
6
2V
5
0.2
4
1V
3
0.7V
0.1
2
1
0.0
0
4
8
12
16
V
0
0
24
5
10
15
mA
VCB
IC
Power Gain Gma , Gms = f(IC )
Power Gain Gma, Gms = f(I C)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
18
24
dB
10V
dB
10V
3V
5V
20
14
2V
18
3V
2V
G
G
25
12
16
10
1V
14
1V
8
12
0.7V
6
10
8
0
0.7V
5
10
15
mA
4
0
25
IC
5
10
15
mA
25
IC
6
Aug-09-2001
BFP182W
Power Gain Gma , Gms = f(VCE):_____
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
|S21|2 = f(VCE):---------
VCE = Parameter, f = 900MHz
f = Parameter
24
dB
26
IC=10mA
8V
dBm
0.9GHz
5V
20
22
0.9GHz
18
20
G
IP 3
1.8GHz
16
3V
18
14
2V
16
1.8GHz
12
14
10
12
8
10
6
4
8
2
6
0
0
2
4
6
V
8
1V
4
0
12
5
10
mA
15
VCE
25
IC
Power Gain |S21|2= f(f)
Power Gain Gma , Gms = f(f)
V CE = Parameter
VCE = Parameter
35
30
IC=10mA
IC =10mA
dB
dB
G
S21
25
20
20
15
15
10V
10
10V
1V
3V
0.7V
5
0
0.0
10
2V
1V
5
0.7V
0.5
1.0
1.5
2.0
2.5
GHZ
0
0.0
3.5
f
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
7
Aug-09-2001
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