Infineon BFP183 Low noise silicon bipolar rf transistor Datasheet

BFP183
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
3
collector currents from 2 mA to 30 mA
2
4
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
1
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP183
Marking
RHs
1=C
Pin Configuration
2=E
3=B
4=E
-
Package
-
SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
65
Base current
IB
5
Total power dissipation1)
Ptot
250
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
V
mA
TS ≤ 76 °C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
295
K/W
1T
S is measured on the collector lead at the soldering point to the pcb
2For the definition of R
thJS please refer to Application Note AN077 (Thermal
1
Resistance Calculation)
2013-10-15
BFP183
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 15 mA, VCE = 8 V, pulse measured
2
2013-10-15
BFP183
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.3
0.5
Cce
-
0.27
-
Ceb
-
1.1
-
AC Characteristics (verified by random sampling)
Transition frequency
GHz
IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
0.9
-
f = 1.8 GHz
-
1.4
-
Gms
-
22
-
dB
Gma
-
15.5
-
dB
Power gain, maximum stable1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
|S21e|2
Transducer gain
dB
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
17.5
-
f = 1.8 GHz
-
11.5
-
1/2
ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21 / S12|
1G
3
2013-10-15
BFP183
Total power dissipation P tot = ƒ(TS)
300
Ptot
mW
200
150
100
50
0
0
20
40
60
80
100
120 °C
150
TS
4
2013-10-15
Package SOT143
5
BFP183
2013-10-15
BFP183
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
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intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
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endangered.
6
2013-10-15
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