Vishay BFR193TF Silicon npn planar rf transistor Datasheet

BFR193TF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
1
The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applications.
2
3
16867
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain applications such as
power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features
•
•
•
•
•
Low noise figure
High transition frequency fT = 8 GHz
e3
Excellent large-signal behaviour
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Typ: BFR193TF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR193TF
Marking
Package
RC
SOT-490
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
2
V
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Document Number 85103
Rev. 1.3, 28-Apr-05
Tamb ≤ 45 °C
IC
80
mA
Ptot
420
mW
Tj
150
°C
Tstg
-65 to +150
°C
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1
BFR193TF
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
Symbol
Value
Unit
RthJA
250
K/W
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Max
Unit
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
Collector-emitter cut-off current
Test condition
DC forward current transfer ratio VCE = 8 V, IC = 30 mA
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2
Symbol
Min
12
VCEsat
hFE
Typ.
50
V
0.1
0.5
100
150
V
Document Number 85103
Rev. 1.3, 28-Apr-05
BFR193TF
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 8 V, IC = 50 mA,
f = 1 GHz
fT
7.5
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.6
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
0.25
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.6
pF
Noise figure
VCE = 8 V, IC = 10 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 900 MHz
F
1.2
dB
F
2.1
dB
Power gain
VCE = 8 V, IC = 30 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 900 MHz
Gpe
15.5
dB
VCE = 8 V, IC = 30 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 2 GHz
Gpe
9.5
dB
VCE = 8 V, IC = 30 mA,
f = 900 MHz, ZO = 50 Ω
|S21e|2
14
dB
VCE = 8 V, IC = 30 mA, f = 2 GHz,
ZO = 50 Ω
|S21e|2
7.5
dB
IP3
34
dBm
Transducer gain
Third order intercept point
VCE = 8 V, IC = 50 mA,
f = 900 MHz
Package Dimensions in mm
0.6 (0.023)
0.8 (0.031)
0.10 (0.004)
0.20 (0.008)
1.5 (0.059)
1.7 (0.066)
0.1 A
3 x 0.20 (0.008)
3 x 0.30 (0.012)
1.5 (0.059)
1.7 (0.066)
0.4 (0.016)
0.1 B
0.65(0.026)
0.75 (0.029)
0.95 (0.037)
ISO Method E
16866
0.5 (0.016)
1.0 (0.039)
Document Number 85103
Rev. 1.3, 28-Apr-05
1.15(0.045)
0.5 (0.016)
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3
BFR193TF
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85103
Rev. 1.3, 28-Apr-05
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