Zetex BFS17H Npn silicon planar rf transistor Datasheet

BFS17L
BFS17H
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS —
E
C
BFS17L - E1L
BFS17H - E1H
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
25
V
Collector-Emitter Voltage
V CEO
15
V
Emitter-Base Voltage
V EBO
2.5
V
mA
Peak Pulse Current
I CM
50
Continuous Collector Current
IC
25
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
Collector Cut-Off
Current
I CBO
Static Forward Current
Transfer Ratio
h FE
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
10
10
nA
µA
V CB=10V, I E=0
V CB=10V, I E=0,
T amb = 100°C
BFS17L
25
100
I C=2.0mA, V CE=1.0V
BFS17H
70
200
I C=2.0mA, V CE=1.0V
20
Transition
Frequency
fT
I C=25mA, V CE=1.0V
125
1.0
GHz
I C=2.0mA, V CE=5.0V
f=500MHz
I C=25mA, V CE=5.0V
f=500MHz
1.3
GHz
0.85
pF
IC=2.0mA, VCE=5V, f=1MHz
Feedback Capacitance
-C re
Output Capacitance
C obo
1.5
pF
VCB=10V, f=1MHz
Input Capacitance
C ibo
2.0
pF
VEB=0.5V, f=1MHz
Noise Figure
N
4.5
dB
I C=2.0mA, V CE=5.0V
R S=50 Ω , f=500MHz
Intermodulation
Distortion
d im
-45
dB
I C=10mA, V CE=6.0V
R L =37.5 Ω ,T amb=25°C
Vo=100mV at fp=183MHz
Vo=100mV at fq=200MHz
measured at f(2q-p) =217MHz
Spice parameter data is available upon request for this device
TBA
BFS17L
BFS17H
TYPICAL CHARACTERISTICS
80
hFE - Normalised Gain
f T - (GHz)
3
f=400MHz
2
VCE=10V
VCE=5V
1
0
0.1
1
100
10
1000
IC - Collector Current (mA)
CRE - (pF)
20
1µ
10µ
100µ
hFE v IC
f=1MHz
1.5
1.0
0.5
0
10
40
20
VCE - (V)
CRE v VCE
1m
IC - Collector Current (A)
fT v IC
2.0
VCE=10V
60
30
10m
100m
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