BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at 4 5 6 collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see 1 2 3 package information below • Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 Peak collector current, f = 10 MHz ICM 50 Total power dissipation1) Ptot 280 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 V mA TS ≤ 93 °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 240 K/W 1T S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2For 1 2011-07-20 BFS17S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 15 - - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-base cutoff current µA ICBO VCB = 10 V, IE = 0 - - 0.05 VCB = 25 V, IE = 0 - - 10 - - 100 Emitter-base cutoff current IEBO VEB = 2.5 V, IC = 0 DC current gain - hFE IC = 2 mA, VCE = 1 V, pulse measured 40 - 150 IC = 25 mA, VCE = 1 V, pulse measured 20 70 - - 0.1 0.4 Collector-emitter saturation voltage VCEsat V IC = 10 mA, IB = 1 mA 2 2011-07-20 BFS17S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) GHz Transition frequency fT IC = 2 mA, VCE = 5 V, f = 200 MHz 1 1.4 - IC = 25 mA, VCE = 5 V, f = 200 MHz 1.3 2.5 - Ccb - 0.55 0.8 Cce - 0.2 - Ceb - 0.9 1.45 NFmin - 3 5 dB |S21e|2 - 14 - dB IP3 - 22.5 - dBm P-1dB - 11 - - Collector-base capacitance pF VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 5 V, ZS = 50 Ω, f = 800 MHz Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 500 MHz Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt 1dB compression point IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 800 MHz 3 2011-07-20 BFS17S Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 300 mW K/W 240 10 2 RthJS Ptot 220 200 180 160 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 140 120 100 10 0 80 60 40 20 0 0 20 40 60 80 120 °C 100 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s TS 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb = ƒ(VCB) Ptotmax/PtotDC = ƒ(tp ) Emitter-base capacitance Ceb = ƒ(VEB) f = 1 MHz 10 3 1.2 - 1 10 CCB, CEB P totmax/PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 0.9 0.8 0.7 CEB 0.6 CCB 0.5 10 1 0.4 0.3 0.2 0.1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 14 16 V 20 VCB , VEB 4 2011-07-20 BFS17S Transition frequency fT= ƒ(IC) VCE = parameter 3 10V GHz 5V 3V fT 2 2V 1.5 1 1V 0.5 0.7V 0 0 5 10 15 20 mA 30 IC 5 2011-07-20 Package SOT363 BFS17S Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 6 2011-07-20 BFS17S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-07-20