Rohm BH29PB1WHFV-TR 1ch 150ma cmos ldo regulator Datasheet

CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□PB1WHFV Series
No.11020EBT05
●Description
The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator
characteristics are ideal. The regulators cut power consumption by lowering their own current consumption to approximately
2 A when the application is operating in the standby state. During normal-current operation it will automatically switch to
high-speed operating mode. The IC's soft start function reduce the rush current that flows to the output capacitors during
startup. The HVSOF5 package, which features excellent heat dissipation, contributes to space-saving application designs.
●Features
1) Automatic switching between low-consumption and high-speed modes
2) Built-in rush current prevention circuit
3) Low-voltage 1.7 V operation
4) High accuracy output voltage: ± 1%
5) Circuit current during low-consumption operation: 2 A
6) Stable with a ceramic capacitor (0.47 µF)
7) Built-in temperature and overcurrent protection circuits
8) Built-in output discharge during standby operation function
9) Ultra-small HVSOF5 power package
●Applications
Battery-driven portable devices, etc.
●Product lineup
150 mA BH□□PB1WHFV Series
Product name
BH□□PB1WHFV
1.2
1.5
1.8
2.5
2.8
2.9
3.0
3.1
3.3
Package
√
√
√
√
√
√
√
√
√
HVSOF5
Model name: BH□□PB1W□
a
b
Symbol
Description
Output voltage specification
a
b
□□
Output voltage (V)
□□
Output voltage (V)
12
1.2 V (Typ.)
29
2.9 V (Typ.)
15
1.5 V (Typ.)
30
3.0 V (Typ.)
18
1.8 V (Typ.)
31
3.1 V (Typ.)
25
2.5 V (Typ.)
33
3.3 V (Typ.)
28
2.8 V (Typ.)
Package HFV: HVSOF5
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© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
●Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Power supply voltage
VMAX
−0.3 to +6.5
V
Pd
410 *1
mW
Operating temperature range
Topr
−40 to +85
°C
Storage temperature range
Tslg
−55 to +125
°C
Tjmax
125
°C
Power dissipation
Junction temperature
*1: Reduced by 4.1 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm  70 mm  1.6 mm)
●Recommended operating ranges (not to exceed Pd)
Parameter
Power supply voltage
Output MAX current
Symbol
Ratings
Unit
VIN
1.7 to 5.5
V
IMAX
0 to 150
mA
●Recommended operating conditions
Parameter
Symbol
Ratings
Min.
Typ.
Max.
Unit
Input capacitor
CIN
0.33 *2
0.47
−
µF
Output capacitor
CO
0.33 *2
0.47
−
µF
Conditions
The use of ceramic capacitors is
recommended.
The use of ceramic capacitors is
recommended.
*2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value can not change as time progresses.
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2/10
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
●Electrical characteristics
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, SEL = 0 V, CIN = 0.47 µF, CO = 0.47 µF)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max..
【Regulator】
Output voltage
(high-speed mode)
VOUT1
Output voltage
(low-consumption mode)
VOUT2
Circuit current
(high-speed mode)
Circuit current
(low-consumption mode)
Circuit current (STBY)
VOUT1
×0.99
VOUT1
-0.025
VOUT2
×0.97
VOUT2
×0.967
VOUT1
×1.01
VOUT1
+0.025
VOUT2
×1.038
VOUT2
×1.043
-
V
VOUT≧2.5V,IOUT=0.1mA,SEL=1.5V
V
VOUT≦1.8V,IOUT=0.1mA,SEL=1.5V
V
VOUT≧2.5V,IOUT=0.1mA,SEL=0V
V
VOUT≦1.8V,IOUT=0.1mA,SEL=0V
ICC1
-
20
40
μA
IOUT=0mA, VIN pin
monitor,SEL=1.5V
ICC2
-
2
4
μA
IOUT=0mA, VIN pin monitor, SEL=0V
ISTBY
-
-
1.0
μA
STBY=0V
Ripple rejection ratio
(high-speed mode)
RR1
42
60
-
dB
VRR=-20dBv, fRR=1kHz,
IOUT=10mA, SEL=1.5V
Dropout voltage 1 *1
VSAT1
-
100
200
mV
VIN=VOUT×0.98,IOUT=50mA
Dropout voltage 2 *1
VSAT2
-
210
400
mV
VIN=VOUT×0.98,IOUT=100mA
Dropout voltage 3 *1
VSAT3
-
315
600
mV
VIN=VOUT×0.98,IOUT=150mA
VDL1
-
2
20
mV
VIN=VOUT+1V to 5.5V,IOUT=10mA
VDL2
-
2
20
mV
VIN=VOUT+1V to 5.5V,IOUT=100μA
VDLO
-
10
40
mV
IOUT=10mA to 100mA
ITH1
0.09
0.3
-
mA
SEL=0V IOUT=3mA⇒0mA sweep
ITH2
-
1.2
2.2
mA
SEL=0V IOUT=0mA⇒3mA sweep
Limit Current
ILMAX
160
300
500
mA
Vo=VOUT×0.90
Short current
ISHORT
20
50
100
mA
Vo=0V
ISTB
-
2
4
μA
STBY=1.5V
VSTBH
VSTBL
1.5
-0.3
-
VIN
0.3
V
V
Discharge resistance at standby RDCG
1.5
2.2
3.0
kΩ
RSEL
0.5
1.0
2.0
MΩ
VSELH
VSELL
1.5
-0.3
-
VIN
0.3
V
V
Line regulation 1
(high-speed mode)
Line regulation 2
(low-consumption mode)
Load regulation
【Mode switch】
Current threshold
(low-consumption mode)
Current threshold
(high-speed mode)
【Over Current Protection 1】
【Stand-by block】
STBY pin sink current
STBY control voltage
ON
OFF
STBY=0V
【SEL PIN】
Pull-down resistance of SEL pin
SEL control voltage
ON
OFF
* Note: This IC is not designed to be radiation-resistant.
*3: Except at VOUT ≤ 1.5 V.
●Electrical characteristics of each output voltage
Output Voltage
Parameter
Min.
70
1.2 V
1.5 V
Max. output
current
1.8 V ≤ VOUT
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Fixed high speed mode
Automatic switch mode
Typ.
Max.
120
−
Unit
Conditions
VCC = 1.7 V
150
−
−
VCC = 2.0 V
50
100
−
VCC = 1.8 V
150
−
−
75
143
−
VCC = VOUT + 0.3 V
150
−
−
VCC = VOUT + 0.6 V
3/10
mA
VCC = 2.2 V
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
4.0
4.0
3.5
3.5
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
IO = 10 mA
0.5
2.5
2.0
1.5
1.0
0.5
1
2
3
4
Input Voltage VIN [V]
5
0
Fig.1 Output Voltage vs Input Voltage
(BH12PB1WHFV)
1
2
3
4
Input Voltage VIN [V]
0
5
Fig.2 Output Voltage vs Input Voltage
(BH30PB1WHFV)
Output Voltage VOUT [V]
40
30
SEL = 1.5 V
20
10
IO = no load
3.0
50
SEL = 0 V
2.5
2.0
1
2
3
4
Input Voltage VIN [ V]
SEL = 1.5 V
1.0
SEL = 0 V
100
200
300
Output Current I OUT [mA]
400
(BH33PB1WHFV)
3.0
O ut put Volt age VOUT [V]
2.0
1.5
1.0
0.5
0
(BH30PB1WHFV)
3.0
2.5
2.0
1.5
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
Output Current IOUT [mA]
400
0.0
0
100
200
300
Output Current I OUT [mA]
400
Fig.8 Output Voltage vs Output Current
(BH30PB1WHFV)
(BH30PB1WHFV)
(BH12PB1WHFV)
400
3.0
2.0
1.0
0.0
0
100
200
300
O utput Current IO UT [ mA]
400
Fig.10 Dropout voltage vs Output Current
(BH18PB1WHFV)
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Fig.9 Output Voltage vs Output Current
(BH33PB1WHFV)
200
100
100
0.5
400
300
200
1.5
100
200
300
Output Current I OUT [mA]
400
300
2.5
0
I nput Output Voltage difference VSAT
[mV]
Input Output Voltage difference VOUT
[mV]
3.5
150
3.5
0.5
0.0
50
100
Output Current IOUT [mA]
Fig.6 GND Current vs-Input Voltage
(BH33PB1WHFV)
Output Voltage VOUT [V]
3.0
Output Voltage VOUT [V]
3.5
SEL = 0 V
0
(BH30PB1WHFV)
(BH12PB1WHFV)
3.5
SEL = 1.5 V
100
0
5
2.5
IO = no load
200
1.5
0.0
0
5
300
0.5
0
2
3
4
Input Voltage VIN [ V]
400
I nput Output Voltage difference VSAT
[mV]
IO = no load
60
1
Fig.3 Output Voltage vs Input Voltage
(BH33PB1WHFV)
3.5
70
IO = 10 mA
0.0
0.0
0
Out put Volt age VO UT [V]
3.0
IO = 10 mA
0.5
0.0
GND Current IGND [μA]
Out put Volt age VOUT [V]
4.0
Output Voltage VOUT [V]
Output Voltage VOUT [V]
●Typical characteristics
0
0
50
100
Output Current IO UT [ mA]
150
0
0
50
100
Output Current IOUT [mA]
150
Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current
(BH33PB1WHFV)
(BH30PB1WHFV)
4/10
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
4
3.1
3.0
2.9
6
Standby Pin Sink Current ISTBY[µA]
Out put Volt age VOUT[V]
O ut put Volt age VOUT[V]
3.2
3
2
1
-50
-25
0
25
50
Temp[℃ ]
75
0.0
100
80
70
70
Ripple Rejection R.R.[dB]
Ripple Rejection R.R.[dB]
80
50
40
30
Co = 0.47 µF
IO = 10 mA
20
1k
1M
Fig.16 Ripple Rejection
(BH12PB1WHFV)
IOUT = 0 mA  10 mA
2
1
1.0
VSTBY[V]
1.5
0.0
2. 0
1.0
VOUT
30
Co = 0.47 µF
IO = 10 mA
100
1k
50 mV / div
IO = no load
10 k
100
Frequency f[Hz]
10 ms / div
1M
Fig.17 Ripple Rejection
(BH30PB1WHFV)
Fig.18 Output Voltage Waveform
During SEL Switching
(BH30PB1WHFV)
IOUT = 1 mA  100
50 mV / div
100 mV / div
VOUT
SEL = 0 V
Fig.19 Load Response (Co = 1.0 µF)
(BH30PB1WHFV)
1 V / div
SEL = 0 V  1.5
40
VOUT
100 s / div
5.0
50
50 mV / div
(power-saving operation)
4.0
Fig.15 Standby Pin Sink Current
(BH30PB1WHFV)
IOUT = 1 mA  30 mA
VOUT
2.0
3.0
VSTBY[V]
SEL
20
10 k
100
Frequency f[Hz]
3
60
10
10
100
0.5
Fig.14 Standby Pin Threshold
(BH30PB1WHFV)
Fig.13 Output Voltage vs Temperature
(BH30PB1WHFV)
60
4
0
0
2.8
5
200 s / div
SEL = 1.5 V
200 s / div
Fig.20 Load Response (Co=1.0 µF)
(BH30PB1WHFV)
Fig.21 Load Response (Co=1.0 µF)
(BH30PB1WHFV)
100 m
Rss = 10 k,
IO = no load
STBY
STBY
1 V / div
Co = 0.47 µF
1 V / div
VOUT
Co = 2.2 µF
Co = 1 µF
Co = 0.47 µF
VOUT
Co = 10 µF
Startup time Trise [sec]
1 V / div
10 m
1.0µ
1 V / div
200 s / div
10 ms / div
100 µ
0.01µ
0.1 µ
1.0µ
Slow start capacitance Css (F)
Fig.22 Output Voltage Rise Time
(BH30PB1WHFV)
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Fig.23 Output Voltage Fall Time
(BH30PB1WHFV)
5/10
Fig.24 Soft Start Rise Time
(BH30PB1WHFV)
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
●Block diagram, recommended circuit diagram, and pin assignment table
BH□□PB1WHFV
VIN
PIN No.
Symbol
Function
1
STBY
Output voltage on/off control(High: ON, Low: OFF)
2
GND
Ground
3
VIN
4
VOUT
5
SEL
Power supply input
Voltage output
Mode switching
(High: Fix in high-speed mode
Low: Automatic low-consumption mode switching)
3
+
Cin
THERMAL &
OVER CURRENT
PROTECTION
VOLTAGE
REFERENCE
GND
CH1
VOUT
4
2
+
Co
CH2
DISCHARGE
SOFFT
START
Cin … 0.47 µF
Co … 0.47 µF
CURRENT
STBY
MONITOR
Rss
(
)
(
Css
1
)
CONTROL
5
BLOCK
SEL
Fig.25
The IC incorporates a built-in auto power-saving function that
continuously monitors the output current and switches
automatically between a low current consumption regulator
and a high-speed operation regulator. This function reduces
the regulator's own current consumption to approximately 1/10
or lower of normal levels when the output current falls below
approximately 300 A.
To operate only the high-speed operation regulator without
using the auto power-saving function, fix the SEL pin to high.

GND current IGND [μ A]
●Auto Power-saving Function
30
Measurement conditions
High-speed mode
BH12PB1WHFV
20
VCC = 2.2 V
10
VSEL = open,
VSTBY = 1.5 V
Low-consumption mode
0
0
0.5
1
1.5
2
2.5
3
Out put current IOUT [ mA]
Fig.26 Auto Power-Saving Function (Example)
Calculating the maximum internal IC power consumption (PMAX)
2. Power Dissipation/Heat Reduction (Pd)
HVSOF5
0.6
*Circuit design
should allow a
sufficient
margin for the
temperature
range so that
PMAX < Pd.
410 mW
0.4
Pd[W]
●Power Dissipation (Pd)
1. Power Dissipation (Pd)
Power dissipation calculations include estimates of power
dissipation characteristics and internal IC power consumption, and
should be treated as guidelines. In the event that the IC is used in
an environment where this power dissipation is exceeded, the
attendant rise in the junction temperature will trigger the thermal
shutdown circuit, reducing the current capacity and otherwise
degrading the IC's design performance. Allow for sufficient margins
so that this power dissipation is not exceeded during IC operation.
0.2
0
0
25
50
75
100
125
Ta[℃]
PMAX = (VIN - VOUT)  IOUT (MAX.)
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VIN : Input voltage
VOUT : Output voltage
IOUT (MAX) : Max. output current
6/10
Fig.27 HVSOF5 Power Dissipation
vs Heat Reduction (Example)
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
●Input Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC
bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
120
100
120
50 V rated voltage
80
60
10V
rated voltage
40
16 V rated voltage
20
0
100
95
Capacitance rate of change (%)
Capacitance rate of change (%)
100
Capacitance rate of change (%)
50 V rated voltage
90
16 V rated voltage
85
10 V
rated voltage
80
75
70
0
1
2
3
4
0
DC bias Vdc (V)
1
2
DC bias Vdc (V)
3
80
40
20
0
-25
4
X7R
X5R
Y5V
60
0
25
Temp[℃]
50
75
Fig.28 Capacitance vs Bias
Fig.29 Capacitance vs Bias
Fig.30 Capacitance vs Temperature
(X5R, X7R, Y5V)
(Y5V)
(X5R, X7R)
●Output capacitors
Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes
lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers.
BH□□PB1WHFV
100
ESR (Ω)
10
Stable region
1
COUT = 0.47 µF
Ta = +25°C
0.1
0.01
0
50
100
150
Output Current Io (mA)
Fig.31 Stable Operation Region (Example)
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7/10
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
●Notes for use
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Ground wiring patterns
The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage
on the power ground line may damage the device.
6. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures.
7. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
8. Back current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
STBY
OUT
GND
Fig.32 Example Bypass Diode Connection
9. I/O voltage difference
Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV)
may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high
state when the voltage differential is saturated.
10. GND Voltage
The potential of GND pin must be minimum potential in all operating conditions.
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8/10
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
11. Preventing Rush Current
By attaching the Rss and Css time constants to the STBY pin, sudden rises in the regulator output voltage can be
prevented, dampening the flow of rush current to the output capacitors. The larger the time constant used, the greater the
resulting reduction. However, large time constants also result in longer startup times, so the constant should be selected
after considering the conditions in which the IC is to be used.
100
Rss = 10 k
Startup
time Trise [sec]
起動時間
IO = no load
10
1.0 m
100 
0.01 
0.1 
1.0 
Slow start
capacitance
Frequency
f[Hz] Css (F)
Fig.33 VOUT Startup Time vs CSS Capacitance (Reference)
12. Regarding input Pin of the IC (Fig.34)
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
Pin A
Pin B
C
Pin B
B
E
Pin A
N
P
+
N
P+
P
N
N
Parasitic
element
P+
P substrate
Parasitic element
GND
B
N
P+
P
N
C
E
P substrate
Parasitic element
GND
GND
GND
Parasitic
element
Other adjacent elements
Fig.34
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9/10
2011.01 - Rev.B
Technical Note
BH□□PB1WHFV Series
●Ordering part number
B
H
3
Part No.
0
P
Output voltage
12: 1.2 V
15: 1.5 V
18: 1.8 V
25: 2.5 V
28: 2.8 V
29: 2.9 V
30: 3.0 V
31: 3.1 V
33: 3.3 V
B
1
W
Series
PB1:Auto powersaving type
H
Shutdown
switch
W : Includes
switch
F
V
-
Package
HFV : HVSOF5
T
R
Packaging and forming specification
TR: Embossed tape and reel
HVSOF5
Embossed carrier tape
(0.3)
Quantity
3000pcs
4
(0.91)
4
5
(0.41)
5
0.2MAX
Tape
1.0±0.05
(0.05)
(0.8)
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
3 2 1
1 2 3
1pin
0.13±0.05
S
+0.03
0.02 –0.02
1.6±0.05
0.6MAX
1.2±0.05
(MAX 1.28 include BURR)
<Tape and Reel information>
1.6±0.05
0.1
S
0.5
0.22±0.05
0.08
Direction of feed
M
(Unit : mm)
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© 2011 ROHM Co., Ltd. All rights reserved.
Reel
10/10
∗ Order quantity needs to be multiple of the minimum quantity.
2011.01 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
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Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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