Rohm BH33RB1WGUT-E2 1ch 150ma cmos ldo regulator Datasheet

CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□RB1WGUT series
No.11020ECT03
●Description
The BH□□RB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision (± 1%) output
voltage. Proprietary ROHM technology enables a small load regulation of 2 mV and a dropout voltage of 100 mV.
At just 1.0 mm  1.04 mm, the new VCSP60N1 package is extremely compact, and the IC's enhanced protection circuits
contribute to improved end products characteristics.
●Features
1) High accuracy output voltage: ± 1%
2) Dropout voltage: 100 mV (at 100 mA)
3) Stable with ceramic capacitors
4) Low bias current: 34 μA
5) High ripple rejection ratio: 63 dB (Typ., 1 kHz)
6) Output voltage on/off control
7) Built-in overcurrent and thermal shutdown circuits
8) VCSP60N1 WL-CSP package : (1.0×1.04×0.6mm)
●Applications
Battery-driven portable devices, etc.
●Product line
150 mA BH□□RB1WGUT Series
Product name
BH□□RB1WGUT
1.5
1.8
2.5
2.8
2.9
3.0
3.1
3.3
Package
√
√
√
√
√
√
√
√
VCSP60N1
Model name: BH□□RB1W□
a
b
Symbol
Description
Output voltage specification
a
□□
Output voltage (V)
□□
Output voltage (V)
15
1.5 V (Typ.)
29
2.9 V (Typ.)
18
1.8 V (Typ.)
30
3.0 V (Typ.)
25
2.5 V (Typ.)
31
3.1 V (Typ.)
28
2.8 V (Typ.)
33
3.3 V (Typ.)
b
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Package GUT: VCSP60N1
1/8
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
●Absolute maximum ratings
Symbol
Ratings
Unit
VMAX
-0.3 to +6.5
V
Pd
530*1
mW
Operating temperature range
Topr
-40 to +85
°C
Storage temperature range
Tstg
-55 to +125
°C
Parameter
Applied supply voltage
Power dissipation
*1: Reduce by 5.3 mW/C over 25C, when mounted on a glass epoxy PCB (7 mm  7 mm  0.8 mm).
●Recommended operating ranges (not to exceed Pd)
Parameter
Symbol
Ratings
Unit
VIN
2.5 to 5.5
V
IOUT
0 to 150
mA
Power supply voltage
Output current
●Recommended operating conditions
Symbol
Parameter
Ratings
Min.
Typ.
Max.
Unit
Input capacitor
CIN
0.7*2
1.0
—
µF
Output capacitor
CO
0.7*2
1.0
—
µF
Conditions
The use of ceramic capacitors is
recommended.
The use of ceramic capacitors is
recommended.
*2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical characteristics
*5
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V , STBY = 1.5 V, CIN = 1 µF, CO = 1 µF)
Limits
Symbol
Unit
Parameter
Conditions
Min.
Typ.
Max.
VOUT
 0.99
VOUT1
VOUT
- 25 mV
VOUT
VOUT2
 0.97
Output voltage 1
Output voltage 2
VOUT
VOUT
VOUT
 1.01
VOUT
+ 25 mV
VOUT
 1.03
V
V
IOUT = 1 mA, Ta = 25°C,
BH25RB1WGUT or higher
IOUT = 1mA, Ta = 25°C,
BH15, 18RB1WGUT
IOUT = 1 mA
Ta = -40°C to 85°C*3
IOUT = 0 mA
Ta = -40°C to 85°C*3
Circuit current
IGND
—
34
72
µA
Circuit current (STBY)
ICCST
—
—
1.0
µA
RR
—
63
—
dB
Dropout voltage
VSAT
—
100
150
mV
Line regulation
VDLI
—
2
20
mV
Load regulation
VDLO
—
2
30
mV
IOUT = 1 mA to 100 mA
Overcurrent protection limit current
ILMAX
—
300
—
mA
VO = VOUT  0.98
ISHORT
—
40
—
mA
VO = 0 V
ISTBY
0.5
1.3
3.6
µA
Ta = -40°C to 85°C*3
ON
VSTBH
1.2
—
VIN
V
Ta = -40°C to 85°C*3
OFF
VSTBL
-0.2
—
0.2
V
Ta = -40°C to 85°C*3
Ripple rejection ratio
Short current
STBY pin current
STBY control voltage
STBY = 0 V
VRR = -20 dBV, fRR = 1 kHz,
IOUT = 10 mA
VIN = 0.98  VOUT, IOUT = 100 mA
(Excluding BH15, 18RB1WGUT)
IOUT = 10 mA
VIN = VOUT + 0.5 V to 5.5 V*4
* This IC is not designed to be radiation-resistant.
*3: These specifications are guaranteed by design.
*4: For BH15, 18RB1WGUT, VIN = 3.0 V to 5.5 V.
*5: For BH15, 18RB1WGUT, VIN = 3.5 V.
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2/8
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
4.0
4.0
3.5
3.5
3.5
3.0
3.0
3.0
2.5
2.0
1.5
1.0
0.5
1
2
3
4
Input Voltage VIN[V]
1.5
1.0
5
2.5
2.0
1.5
1.0
0.5
0.0
0
Fig. 1 Output Voltage vs Input Voltage
(BH15RB1WGUT)
1
2
3
4
Input Voltage VIN[V]
0
5
Fig. 2 Output Voltage vs Input Voltage
(BH28RB1WGUT)
60
50
50
50
30
20
GND Current IGND[µA]
60
40
40
30
20
10
10
0
1
2
3
4
Input Voltage VIN[V]
Fig. 4 GND Current vs Input Voltage
(BH15RB1WGUT)
40
30
20
1
2
3
4
Input Voltage VIN[V]
5
0
Fig. 5 GND Current vs Input Voltage
(BH28RB1WGUT)
3.0
3.0
3.0
2.0
1.5
1.0
Output Voltage VOUT[V]
3.5
Output Voltage VOUT[V]
3.5
2.5
2.0
1.5
1.0
0.5
0.5
0
100
200
300
Output Current IOUT[mA]
Fig. 7 Output Voltage vs Output Current
(BH15RB1WGUT)
100
200
300
Output Current IOUT[mA]
400
Fig. 8 Output Voltage vs Output Current
(BH28RB1WGUT)
200
5
2.5
2.0
1.5
1.0
0.0
0
400
2
3
4
Input Voltage VIN[V]
0.5
0.0
0.0
1
Fig. 6 GND Current vs Input Voltage
(BH33RB1WGUT)
3.5
2.5
5
0
0
5
2
3
4
Input Voltage VIN[V]
10
0
0
1
Fig. 3 Output Voltage vs Input Voltage
(BH33RB1WGUT)
60
GND Current IGND[µA]
GND Current IGND[µA]
2.0
0.0
0
Output Voltage VOUT[V]
2.5
0.5
0.0
0
100
200
300
Output Current IOUT[mA]
400
Fig. 9 Output Voltage vs Output Current
(BH33RB1WGUT)
0.5
150
Dropout Voltage VSAT[V]
Dropout Voltage VSAT[V]
Output Voltage VOUT[V]
4.0
Output Voltage VOUT[V]
Output Voltage VOUT[V]
●Typical characteristics
100
50
0
0.4
0.3
0.2
0.1
0.0
0
50
100
Output Current IOUT[mA]
150
Fig. 10 Dropout Voltage vs Output Current
(BH28RB1WGUT)
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0
50
100
Output Current IOUT[mA]
150
Fig. 11 Dropout Voltage vs Output Current
(BH33RB1WGUT)
3/8
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
1.55
1.50
1.45
Output Voltage VOUT[V]
Output Voltage VOUT[V]
Output Voltage VOUT[V]
3.40
2.90
1.60
2.85
2.80
2.75
IOUT=1mA
0
25
50
Temp[℃]
75
100
Fig. 12 Output Voltage vs Temperature
(BH15RB1WGUT)
-50
IOUT=1mA
-25
0
25
50
Temp[℃]
75
-50
100
Fig. 13 Output Voltage vs Temperature
(BH28RB1WGUT)
80
70
70
70
50
40
30
Co=1.0μF
Io=10mA
20
10
60
50
40
30
1k
10 k
Frequency f[Hz]
Co=1.0μF
Io=10mA
20
10
100
Ripple Rejection R.R.[dB]
80
60
100 k
1M
Fig. 15 Ripple Rejection
(BH15RB1WGUT)
100
1k
100
50
40
30
Co=1.0μF
Io=10mA
10
100
1k
10 k
100 k
Frequency f[Hz]
1M
Fig. 17 Ripple Rejection
(BH33RB1WGUT)
IOUT = 1 mA → 30 mA
VOUT
50 mV/div
50 μs/div
50 μs/div
Fig. 19 Load Response (Co = 1.0 μF)
(BH28RB1WGUT)
Fig, 20 Load Response (Co = 1.0 μF)
(BH33RB1WGUT)
1 V/div
1 V/div
1 V/div
STBY
STBY
75
50 mV/div
50 μs/div
Fig. 18 Load Response (Co = 1.0 μF)
(BH15RB1WGUT)
25
50
Temp[℃]
60
IOUT = 1 mA → 30 mA
VOUT
STBY
1 V/div
1 V/div
Co = 1 μF
VOUT
1M
50 mV/div
RL = 2.8 kΩ
Co = 1 μF
0
20
Fig. 16 Ripple Rejection
(BH28RB1WGUT)
IOUT = 1 mA → 30 mA
VOUT
10 k
100 k
Frequency f[Hz]
-25
Fig. 14 Output Voltage vs Temperature
(BH33RB1WGUT)
80
Ripple Rejection R.R.[dB]
Ripple Rejection R.R.[dB]
3.25
3.20
2.70
-25
3.30
IOUT=1mA
1.40
-50
3.35
Co = 1 μF
RL = 3.3 kΩ
1 V/div
RL = 1.5 kΩ
VOUT
Co = 2.2 μF
Co = 2.2 μF
100 μs/div
100 μs/div
Fig. 21 Output Voltage Rise Time
(BH15RB1WGUT)
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Fig. 22 Output Voltage Rise
Time
(BH28RB1WGUT)
4/8
VOUT
Co = 2.2 μF
100 μs/div
Fig. 23 Output Voltage Rise Time
(BH33RB1WGUT)
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
●Block Diagram, Recommended Circuit Diagram, and Pin Assignment Diagram
BH□□RB1WGUT
VIN
VIN
Pin No.
Symbol
B2
VIN
B1
VOUT
Voltage output
A1
GND
Ground
A2
STBY
Output voltage on/off control
(High: ON, Low: OFF)
B2
VO LTAG E
R EF ERE NCE
Cin
VOUT
VOUT
B1
G ND
TH ERM A L
P RO T ECT IO N
A1
STBY
Power supply input
Co
O VER CU RRE NT
P RO TE CTIO N
VSTBY
Function
1PIN MARK
A2
2
1
C O NT RO L
BLO CK
A
Cin: 1.0 µF
Co: 1.0 µF
B
Fig. 24
TOP VIEW (Mark side)
●Power Dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include output power dissipation characteristics and internal IC power consumption. In
the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the
junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the
IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
PMAX = (VIN - VOUT)  IOUT (MAX.)
VIN: Input voltage
VOUT: Output voltage
IOUT (MAX): Output current
2. Power dissipation/power dissipation reduction (Pd)
VCSP60N1
0.6
530 mW
Board: 7 mm  7 mm  0.8 mm
Material: Glass epoxy PCB
Pd[W]
0.4
0.2
0
0
25
50
75
100
125
Ta[℃]
*Circuit design should allow a sufficient margin for the temperature range for PMAX < Pd.
Fig. 25 VCSP60N1 Power Dissipation/Power Dissipation Reduction (Example)
●Input Output Capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors are used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. Use X5R or X7R ceramic capacitors, which offer good temperature and DC bias characteristics as well as
stable high voltages.
Typical ceramic capacitor characteristics
50 V torelance
100
Capacitance
of change
(%)(%)
Capacitancerate
rate
of change
50 V
torelance
95
Capacitance
rate of change
[%] (%)
静電容量変化率
100
Capacitance rate
rate of
of change
change (%)]
(%)
Capacitance
120
100
120
90
80
16 V torelance
85
60
10 V torelance
16 V torelance
10 V torelance
80
40
75
20
70
0
0
1
2
DC bias Vdc (V)
3
4
Fig. 26 Capacitance vs Bias (Y5V)
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0
1
2
DC bias Vdc (V)
3
Fig.27 Capacitance vs Bias
(X5R, X7R)
5/8
4
X7R
X5R
80
Y5V
60
40
20
0
-25
0
25
Temp[℃]
50
75
Fig. 28 Capacitance vs Temperature
(X5R, X7R, Y5V)
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
●Output capacitors
Mounting input capacitor between input pin and GND (as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value
goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers.
BH□□RB1WGUT
100
COUT = 1.0 µF
Ta = +25°C
ESR[Ω]
10
1
Stable region
0.1
0.01
0
50
100
150
出力電流IOUT[mA]
Output Current Iout [mA]
Fig. 29 Stable Operating Region Characteristics (Example)
●Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any
over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as
fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures.
6. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
7. Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
8. Influence of strong light
Exposure of the IC to strong light sources such as infrared light from a halogen lamp may cause the IC to malfunction.
When it is necessary to use the IC in such environments, implement measures to block exposure to light from the light
source. During testing, exposure to neither fluorescent lighting nor white LEDs had a significant effect on the IC.
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6/8
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
9. GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
10. Back Current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
STBY
OUT
GND
Fig. 30 Example Bypass Diode Connection
11. Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
12. Regarding Input Pin of the IC (Fig.31)
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Transistor (NPN)
Resistor
Pin A
Pin B
C
Pin B
B
E
Pin A
N
P+
N
P+
P
N
N
Parasitic
element
P+
P substrate
Parasitic element
GND
B
N
P+
P
N
C
E
Parasitic
element
P substrate
Parasitic element
GND
GND
GND
Other adjacent elements
Fig. 31 Example of IC structure
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7/8
2011.01 - Rev.C
Technical Note
BH□□RB1WGUT series
●Ordering part number
B
H
1
Part No.
5
R
Output voltage
15: 1.5 V
18: 1.8 V
25: 2.5 V
28: 2.8 V
29: 2.9 V
30: 3.0 V
31: 3.1 V
33: 3.3 V
B
1
W
Series
RB1 : High ripple
rejection
G
Shutdown
switch
W : Includes
switch
U
T
Package
GUT: VCSP60N1
-
E
2
Packaging and forming specification
E2: Embossed tape and reel
VCSP60N1
<Tape and Reel information>
1.04±0.1
1Pin MARK
1.00±0.1
Tape
Embossed carrier tape
Quantity
3000pcs
E2
0.21±0.05
0.6±0.075
Direction
of feed
(The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand.)
S
4-φ0.3±0.05
A
0.05 A B
0.27±0.1
0.08 S
0.5
A
1
0.25±0.1
1234
1234
1234
1234
1234
1234
B
B
2
0.5
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© 2011 ROHM Co., Ltd. All rights reserved.
(Unit:mm)
Reel
1Pin
Direction of feed
※When you order , please order in times the amount of package quantity.
8/8
2011.01 - Rev.C
Notice
Notes
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
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obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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R1120A
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