Photointerrupter(Transmissive) KPI-261D DESCRIPTION DIMENSIONS The photointerrupter high-performance standard type KPI-261D combines a high-output GaAs IRED with a high sensitivity phototransistor. FEATURES • High Performance • Compact • High Speed Response • Widely Applicable APPLICATIONS • Home Appliance • OA Equipment • Measuring Instrument • Telecommunication Equipment ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit IF 50 mA IFP 0.5 A Forward Current Input Output Pulse Forward Current (Ta=25℃) Symbol *1 Reverse Voltage VR 5 V Power Dissipation PD 75 mW Collector Emitter Voltage VCEO 30 V Emitter Collector Voltage VECO 5 V IC 20 mA Collector Current Collector Power Dissipation PC 75 mW *2 TOPR -20 ~ +85 ℃ TSTG -30 ~ +100 ℃ TSOL 260 ℃ Operating Temperature Storage Temperature *2 Soldering Temperature *3 *1. Pulse width : tw≤100µsec.period : T=10msec *2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the package ELECTRO-OPTICAL CHARACTERISTICS Symbol Parameter Input Output MIN. TYP. MAX. Unit 1.2 1.4 V Forward Voltage VF IF=20mA - Reverse Current IR VR=5V - - 10 µA Peak Wavelength ?P IF=20mA - 940 - nm VCE=5V, 0 Lux - 1 100 nA mA ICEO Dark Current IL Light Current Coupled (Ta=25℃) Conditions Collector Emitter Saturation Voltage Response Time VCE(SAT) Rise Time tr Fall Time tf VCE=5V, IF= 20mA (Non-shading) 0.5 - 5 IF=20mA, IC=0.1mA - 0.15 0.4 V VCC=5V, IC=2mA, RL=100Ω - 50 - µs - 50 - µs 1/2 Photointerrupter(Transmissive) KPI-261D Forward current Vs. Forward voltage (㎃) (㎃) 0 20 40 60 80 (℃) Ambienttempe temperature(Ta) Ambient ra ture (Ta) 0 0.5 1.0 1.5 2.0 Forwardvoltage(V voltage( VFF) ) Forward IF =50 mA 3 IF =40 mA IF =30 mA 2 IF =20 mA 1 0 IF =10 mA 0 Relativelight light current( I L ) L) Relative current(I 4 100 50 0 -20 0 20 40 60 (℃) Ambient temperature( Ta ) Ambient temperature(Ta) Switching time Vs. Load resistance Relative light current Vs. Moving distance (㎲) 10 2 (%) X tr tf 10 1 ) 10 2 103 10 4 (Ω Load Resistance( R ) L Road Resistance(R L) Relative current(I Relativelight light current( IL ) L ) 10 3 0 0 10 20 30 40 (mA) Forward Current(I Current( IF )F ) Forward Dark current Vs. Ambient temperature (nA) V C E =5V IF =20mA 0 2 4 6 8 10 12 (V) Collector-Emitter Voltage( VCE ) CE) Collector-Emitter Voltage(V V CC =5V Ta=25˚C IF =10mA 1 (V) (%) 5 2 Relative light current Vs. Ambient temperature (㎃) Ta=25˚ C 3 Y VCC = 5V T a=25˚ C IF =10 mA 100 V CE =10V 102 101 100 10- 1 0 20 40 60 80 100 (℃) Ambient temperature(Ta) temperature( Ta ) Ambient Response time circuit Response timemeasurement measurement circuit VCC Input VCC = 5V C Ta=25˚ IF =10mA IC RL VOUT Input 90% 10% Output td tr 50 tf Method of of measuring Method measuringposition position detection characteristic detection characteristic Optical Axis(X) Optical Axis(X) 0 -2 0 +2 -2 0 Moving distance( L) Moving distance(L) 2/2 +2 (mm) － 0 ＋ Optical Axis(Y) Axis(Y) Optical 0 50 Light current Vs. Collentor-Emitter voltage Light Current( I L) L) Light Current(I V CE =5V Ta=25˚C 4 Light Current(I Light Current( ILL)) 50 100 Collector dark dark current( I CEO C )EO ) Collector current(I 100 0 Responsetime time Response tr, tftr, tf Light current Vs. Forward current Ta=25˚ C Forward current( I F ) Fo rw ard cu rren t( IF) Powerdissipation(P dissipartion( PC ) C) Power Collector power dissipation Vs. Ambient temparature (㎽)