SFH619A Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, 300 BVCEO FEATURES A 1 4 C • High collector emitter voltage, VCEO = 300 V C 2 3 E • High isolation test voltage: 5300 VRMS • Standard plastic DIP-4 package • Compatible with Toshiba TLP627 • Lead (Pb)-free component • Component in accordance to 2002/95/EC and WEEE 2002/96/EC RoHS i179062 AGENCY APPROVALS DESCRIPTION • UL - file no. E52744 system code H or J The SFH619A is optically coupled isolators with a gallium arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO ORDER INFORMATION PART REMARKS SFH619A CTR > 1000 %, DIP-4 SFH619A-X007 CTR > 1000 %, SMD-4 (option 7) SFH619A-X009 CTR > 1000 %, SMD-4 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT VRM 6.0 V IF 60 mA INPUT Peak reverse voltage Forward continuous current Derate linearly from 25 °C 1.33 mW/°C Pdiss 100 mW Collector emitter breakdown voltage BVCEO 300 V Emitter collector breakdown voltage BVECO 0.3 V IC 125 mA 2.0 mW/°C Pdiss 150 mW Power dissipation OUTPUT Collector (load) current Derate linearly from 25 °C Power dissipation COUPLER Derate linearly from 25 °C Total power dissipation Isolation test voltage between emitter and detector, standard climate: 23 °C/50 % RH, DIN 50014 Document Number: 83674 Rev. 1.5, 25-Jan-08 t = 1.0 s 3.33 mW/°C Ptot 250 mW VISO 5300 VRMS For technical questions, contact: [email protected] www.vishay.com 1 SFH619A Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, 300 BVCEO (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Tstg - 55 to + 150 °C Tamb - 55 to + 100 °C Tsld 260 °C COUPLER Isolation resistance Storage temperature Operating temperature Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 10 mA Reverse current MIN. TYP. MAX. UNIT VF 1.2 1.5 V VR = 6.0 V IR 0.02 10 µA VR = 0 V CO 14 Collector emitter breakdown voltage ICE = 100 µA BVCEO 300 V Emitter collector breakdown voltage IEC = 100 µA BVECO 0.3 V INPUT Capacitance pF OUTPUT Collector emitter dark current VCE = 200 V,TA = 25 °C ICEO VCE = 200 V,TA = 100 °C ICEO VCE = 0 V, f = 1.0 MHz CCE Collector emitter capacitance 10 200 nA 20 nA 39 pF COUPLER Collector emitter saturation voltage Coupling capacitance IF = 1.0 mA, IC = 10 mA VCEsat IF = 10 mA, IC = 100 mA VCEsat VI-O = 0 V, f = 1.0 MHz CC 1.0 0.3 1.2 0.6 V V pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Coupling transfer ratio TEST CONDITION SYMBOL MIN. IF = 1.0 mA, VCE = 1.0 V CTR 1000 MIN. TYP. MAX. UNIT % SWITCHING CHARACTERISTICS PARAMETER Rise time Fall time Turn-on time Turn-off time www.vishay.com 2 TEST CONDITION SYMBOL VCC = 10 V, IC = 10 mA, RL = 100 Ω tr TYP. 3.5 MAX. UNIT µs VCC = 10 V, IF = 16 mA, RL = 180 Ω tr 1.0 µs VCC = 10 V, IC = 10 mA, RL = 100 Ω tf 14.5 µs VCC = 10 V, IF = 16 mA, RL = 180 Ω tf 20.5 µs VCC = 10 V, IC = 10 mA, RL = 100 Ω ton 4.5 µs VCC = 10 V, IF = 16 mA, RL = 180 Ω ton 1.5 µs VCC = 10 V, IC = 10 mA, RL = 100 Ω toff 29.0 µs VCC = 10 V, IF = 16 mA, RL = 180 Ω toff 53.5 µs For technical questions, contact: [email protected] Document Number: 83674 Rev. 1.5, 25-Jan-08 SFH619A Optocoupler, Photodarlington Output, Vishay Semiconductors High Gain, 300 BVCEO SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 10000 V VIORM 890 V PSO 400 mW ISI 275 mA TSI 175 7 °C Creepage distance standard DIP-4 mm Clearance distance standard DIP-4 7 mm Creepage distance 400 mil DIP-4 8 mm Clearance distance 400 mil DIP-4 8 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm Note As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 VCC RL VCE VO tR t ON IF tF t OFF Collector Current, IC (mA) VCE = 1.2 V IF 100 VCE = 1.0 V 10 1 0.1 0.01 0 1 10 Forward Current, IF (mA) 100 isfh619a_01 isfh619a_03 Fig. 1 - Switching Waveform and Switching Schematic Document Number: 83674 Rev. 1.5, 25-Jan-08 Fig. 2 - Collector Current (mA) vs. Forward Current (mA) For technical questions, contact: [email protected] www.vishay.com 3 SFH619A Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, 300 BVCEO 1000.00 120 VCE = 300 V TA = - 100 °C 100 100.00 TA = - 25 °C ICEO (nA) Collector Current, IC (mA) 140 80 TA = - 40 °C 60 40 VCE = 200 V VCE = 50 V 10.00 1.00 20 0 0 5 10 15 20 25 30 35 Forward Current, IF (mA) 40 45 0.10 - 40 50 0 20 40 60 80 100 Temperature, TA (°C) isfh619a_04 isfh619a_07 Fig. 6 - Collector Emitter Dark Current vs. Collector Emitter Voltage over Temperature Fig. 3 - Collector Current vs. Forward Current 10000 90 Current Transfer Ratio, CTR IF = 10 mA 80 Collector Current, IC (mA) - 20 70 60 50 40 30 IF = 1 mA 20 10 0 - 40 - 20 0 20 40 60 Temperature, TA (°C) 80 VCE=1.2 V 1000 VCE=1 V 100 0.10 100 1.00 10.00 Forward Current, IF (mA) 100.00 isfh619a_08 isfh619a_05 Fig. 4 - Collector Current vs. Ambient Temperature Fig. 7 - Current Transfer Ratio vs. Forward Current 140 1.2 120 1.0 Normalized CTR Collector Current, IC (mA) IF = 10 mA 100 80 60 40 0.7 0.8 0.9 1.0 1.1 Collector Emitter Voltage, VCE (V) 0.4 0 - 40 1.2 isfh619a_06 - 20 0 20 40 60 80 100 Temperature, TA (°C) isfh619a_09 Fig. 5 - Collector Current vs. Collector Emitter Voltage www.vishay.com 4 0.6 0.2 20 0 0.6 IF = 1.0 mA 0.8 Fig. 8 - Normalized CTR vs. Temperature For technical questions, contact: [email protected] Document Number: 83674 Rev. 1.5, 25-Jan-08 SFH619A Optocoupler, Photodarlington Output, Vishay Semiconductors High Gain, 300 BVCEO Time Switching (µs) 1000.00 t OFF 100.00 10.00 t ON 1.00 0.1 1 Load Resistor, RL (kΩ) 10 isfh619a_10 Fig. 9 - Switching Time vs. Load Resistor PACKAGE DIMENSIONS in inches (millimeters) 2 1 Pin one ID 0.255 (6.48) 0.268 (6.81) ISO method A 3 4 0.179 (4.55) 0.190 (4.83) 0.300 (7.62) typ. 0.031 (0.79) typ. 0.030 (0.76) 0.045 (1.14) 0.050 (1.27) typ. 0.130 (3.30) 0.150 (3.81) 4° typ. 0.018 (0.46) i178027 0.022 (0.56) 0.230 (5.84) 0.250 (6.35) 10° 0.020 (0.508) 0.035 (0.89) 0.050 (1.27) 0.110 (2.79) 0.130 (3.30) 3° to 9° 0.008 (0.20) 0.012 (0.30) 0.100 (2.54) Option 7 Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) typ. 0.300 (7.62) ref. 0.028 (0.7) min. 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max. Document Number: 83674 Rev. 1.5, 25-Jan-08 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. 15° max. For technical questions, contact: [email protected] 18494 www.vishay.com 5 SFH619A Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, 300 BVCEO OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83674 Rev. 1.5, 25-Jan-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1