DIODES 1N4454

1N4454
SILICON SWITCHING DIODE
Features
·
·
·
·
High Reliability
High Conductance
For General Purpose Switching Applications
Available in Surface Mount Version
(LL4454)
B
A
A
C
D
Mechanical Data
·
·
·
·
·
DO-35
Case: DO-35, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
1N4454
Unit
VRRM
VRWM
VR
75
V
Forward Continuous Current (Note 1)
IFM
300
mA
Average Rectified Output Current (Note 1)
IO
150
mA
IFSM
1.0
2.0
A
Pd
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
400
mW
RqJA
300
K/W
Tj, TSTG
-65 to +175
°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Maximum Forward Voltage Drop
VFM
¾
¾
1.0
V
IF = 10mA
Maximum Peak Reverse Current
IRM
¾
¾
100
nA
VR = 50V
Junction Capacitance
Cj
¾
4.0
¾
pF
VR = 0V, f = 1.0MHz
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
Note:
¾
trr
4.0
¾
Test Condition
1. Valid provided that leads are kept at ambient temperature.
DS12016 Rev. F-2
1 of 1
1N4454