MOTOROLA MJ15004

Order this document
by MJ15003/D
SEMICONDUCTOR TECHNICAL DATA
The MJ15003 and MJ15004 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications.
• High Safe Operating Area (100% Tested) —
250 W @ 50 V
• For Low Distortion Complementary Designs
• High DC Current Gain —
hFE = 25 (Min) @ IC = 5 Adc
*Motorola Preferred Device
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
250 WATTS
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CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
140
Vdc
Collector–Base Voltage
VCBO
140
Vdc
Emitter–Base Voltage
VEBO
5
Vdc
Collector Current — Continuous
IC
20
Adc
Base Current — Continuous
IB
5
Adc
Emitter Current — Continuous
IE
25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
250
1.43
Watts
W/_C
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
0.70
_C/W
TL
265
_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/16″ from Case for
10 seconds
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
—
Vdc
—
—
100
2
µAdc
mAdc
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
—
250
µAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
100
µAdc
5
1
—
—
hFE
25
150
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat)
—
1
Vdc
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
VBE(on)
—
2
Vdc
fT
2
—
MHz
cob
—
1000
pF
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Baised
(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
IC, COLLECTOR CURRENT (AMP)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
20
15
10
2%.
TC = 25°C
7
5
3
2
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
1
0.7
0.5
0.3
0.2
2
3
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on T J(pk) = 200_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
5 7 10
20 30
50 70 100 150 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*MJ15003/D*
MJ15003/D