19-2844; Rev 1; 8/03 ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP Features ♦ Guaranteed 8mA (min) VBUS Charge-Pump Output ♦ ±15kV ESD Protection on VBUS and ID_IN ♦ Up to +6.0V Backdrive Capability for VBUS ♦ +2.6V to +5.5V Operating Voltage Range ♦ VL Operates Down to +1.65V ♦ Guaranteed VBUS Input Impedance When Not Driven ♦ Automatic CLOAD Detection ♦ Comparators for Host Negotiation Protocol ♦ ID_IN Detection ♦ Available in 4 x 3 UCSP or 14-Pin TSSOP Package Ordering Information TEMP RANGE PINPACKAGE TOP MARK MAX3355EEBC-T -40°C to +85°C 4 x 3 UCSP ABE MAX3355EEUD -40°C to +85°C 14 TSSOP — PART Applications Cell Phones PDAs Pin Configurations appear at end of data sheet. MP3 Players Digital Cameras Functional Diagram VCC C+ CVCC LOGIC SUPPLY +1.65V TO VCC VL CURRENT SOURCE MAX3355E ESD SHDN STATUS1 STATUS2 DUAL-ROLE ASIC CHARGE PUMP VBUS 5V AT 8mA LEVEL SHIFTER 40kΩ TO 100kΩ STATUS1 STATUS2 VBUS COMPARATORS GND ID_IN ID_OUT ESD USB XCVR VBUS USB CONNECTOR ON/OFF OFFVBUS GND ID D+ D- ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX3355E General Description The MAX3355E integrates a charge pump and comparators to enable a system with an integrated USB onthe-go (OTG) dual-role transceiver to function as a USB OTG dual-role device. USB OTG facilitates the direct connection of peripherals and mobile devices such as PDAs, cellular phones, MP3 players, and digital cameras to one another without a host PC. The MAX3355E’s internal charge pump supplies VBUS power and signaling that is required by the transceiver as defined in On-the-Go Supplement to the USB 2.0 Specification, Revision 1.0. The MAX3355E features ID detection and internal comparators for monitoring VBUS. The VBUS status outputs are used during negotiation for the USB according to the session request protocol (SRP) and host negotiation protocol (HNP). The MAX3355E operates with logic supply voltages (VL) as low as 1.65V, ensuring compatibility with lowvoltage ASICs. The device also features a logic-selectable 1µA shutdown mode. The MAX3355E has built-in ±15kV ESD-protection circuitry to protect the VBUS and ID_IN pins. The device is available in a miniature 4 x 3 chip-scale package (UCSP), as well as a 14-pin TSSOP package, and is specified for operation over the -40°C to +85°C extended temperature range. MAX3355E ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND) VCC, VL, VBUS, ID_IN.............................................-0.3V to +6.0V C+..................................................................(VCC - 0.3V) to +6V C-................................................................-0.3V to (VCC + 0.3V) OFFVBUS, SHDN, STATUS1, STATUS2, ID_OUT ....................................-0.3V to (VL + 0.3V) VBUS Short Circuit to GND .........................................Continuous Output Current (all other pins)..........................................±15mA Continuous Power Dissipation (TA = +70°C) 4 x 3 UCSP (derate 6.5mW/°C above +70°C) .............520mW 14-Pin TSSOP (derate 9.1mW/°C above +70°C) .........727mW Operating Temperature Range ...........................-40°C to +85°C Storage Temperature Range .............................-65°C to +150°C Junction Temperature ......................................................+150°C Lead Temperature (soldering, 10s) .................................+300°C Bump Temperature (soldering) Infrared (15s) ...............................................................+200°C Vapor Phase (20s) .......................................................+215°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA = +25°C, unless otherwise noted.) (Notes 1, 2) PARAMETER Supply Voltage SYMBOL CONDITIONS MIN TYP MAX UNITS VCC 2.6 5.5 V Logic Supply Voltage VL 1.65 VCC V Logic Supply Current IL Operating Supply Current Shutdown Supply Current ICC ICCSHDN 100 µA No activity on VBUS; comparator and reference active 200 µA Device A configured, OFFVBUS = VL, ILOAD = 8mA, charge pump on 20 mA Device B configured, SHDN = GND 1 Device A configured, SHDN = GND 30 µA Thermal-Shutdown Protection Threshold Device A configured, OFFVBUS = VL, charge pump on +150 °C Thermal-Shutdown Protection Hysteresis Device A configured, OFFVBUS = VL, charge pump on +20 °C LOGIC INPUTS AND OUTPUTS STATUS1, STATUS2, ID_OUT Output Voltage OFFVBUS, SHDN Input Voltage Input Leakage Current VOH ISOURCE = +1mA VOL ISINK = -1mA VIH 2/3 x VL 0.4 2/3 x VL 0.4 VIL ILKG OFFVBUS, SHDN = GND or VL ±1 V V µA VBUS OUTPUT VOLTAGE: DEVICE A CONFIGURED VBUS Output Voltage ILOAD = 0 to 8mA, CLOAD = 1µF, OFFVBUS = VL, ID_IN = GND No load, CLOAD = 1µF, OFFVBUS = VL, ID_IN = GND 4.63 5.25 V 4.8 VBUS Leakage Voltage OFFVBUS = GND 200 mV VBUS Sink Current OFFVBUS = GND, VBUS = +6.0V 150 µA 2 _______________________________________________________________________________________ ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP (VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA = +25°C, unless otherwise noted.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS VBUS Source Current OFFVBUS = VL, ID_IN = GND VBUS Short-Circuit Current Limit VBUS shorted to GND VBUS Output Ripple ILOAD = 8mA, CLOAD = 1µF, OFFVBUS = VL, ID_IN = GND (Note 3) MIN RINVBUS MAX 8 OFFVBUS = GND or SHDN = GND 40 CLOAD = 20µF, OFFVBUS = VL, ID_IN = VCC, IBUS source on-time = tVBUSCHRG 2.1 UNITS mA 200 Charge-Pump Switching Frequency VBUS Input Impedance TYP mA 100 mV 500 kHz 100 kΩ LOAD DETECTION VBUS OUTPUT VOLTAGE VBUS Output Voltage V CLOAD = 95µF, OFFVBUS = VL, ID_IN = VCC, IBUS source on-time = tVBUSCHRG VBUS Source Current OFFVBUS = VL, ID_IN = VCC (Note 4) VBUS Current Gate Time OFFVBUS = VL, ID_IN = VCC, Device B (Note 4) tVBUSCHRG 1.9 450 600 850 µA 155 (max) 105 56 (min) ms 4.4 4.55 4.63 VBUS COMPARATOR VBUS Valid Comparator Threshold VTHVBUSVLD VBUS rising VBUS Valid Comparator Hysteresis Session Valid Comparator Threshold 20 VTHSESVLD 1.12 Session Valid Comparator Hysteresis B-Session End Comparator Threshold 1.68 15 VTHSESEND 0.4 B-Session End Comparator Hysteresis Shutdown Comparator 1.4 0.5 0.8 V mV 0.6 30 VTH,SHDN V mV V mV 2.4 V ID_IN ID_IN Voltage Input for Device B 2/3 x Vcc V ID_IN Voltage Input for Device A ID_IN Input Impedance 150 200 0.4 V 250 kΩ ESD PROTECTION (ID_IN, VBUS) Human Body Model ±15 kV IFC 1000-4-2 Air-Gap Discharge ±15 kV IFC 1000-4-2 Contact Discharge ±8 kV _______________________________________________________________________________________ 3 MAX3355E ELECTRICAL CHARACTERISTICS (continued) TIMING CHARACTERISTICS (VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA = +25°C, unless otherwise noted.) (Notes 1, 2) PARAMETER SYMBOL VBUS Rise Time CONDITIONS MIN TYP 0 to 4.4V, CLOAD = 1µF, ILOAD = 8mA MAX UNITS 100 ms OFFVBUS Propagation Delay 6 µs Comparator Propagation Delay 3 µs Time to Exit Shutdown 50 µs Time to Shutdown 1 µs ID_OUT Rise Time CID_OUT = 50pF 10 ns ID_OUT Fall Time CID_OUT = 50pF 10 ns Note 1: Limits are 100% production tested at +25°C. Limits over temperature are guaranteed by design. Note 2: All currents out of the device are positive; all currents into the device are negative. All voltages are referenced to device ground unless otherwise specified. Note 3: The ripple voltage is strongly correlated to the bus capacitance and its ESR. Note 4: The VBUS current source and current gate time vary together with process and temperature such that the resulting VBUS pulse is guaranteed to drive a <13µF load to a voltage >2.0V, and to drive a >96µF load to a voltage <2.2V. Typical Operating Characteristics (VCC, VL = +3.3V, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF min, ESRLOAD = 1Ω max, TA = +25°C, unless otherwise noted.) 60 40 4.75 VCC = 5.5V 4.50 VCC = 2.6V 4.25 20 0 0 10 20 30 40 VBUS OUTPUT CURRENT (mA) 4 VCC = 4.0V 50 150 IVBUS = 8mA VBUS OUTPUT RIPPLE VOLTAGE (mV) 80 5.00 MAX3355E toc02 VBUS OUTPUT VOLTAGE (V) VCC = 2.6V VCC = 4.0V VCC = 5.5V 100 5.25 MAX3355E toc01 120 VBUS OUTPUT RIPPLE VOLTAGE vs. VCC INPUT VOLTAGE VBUS OUTPUT VOLTAGE vs. VBUS OUTPUT CURRENT MAX3355E toc03 VCC INPUT CURRENT vs. VBUS OUTPUT CURRENT VCC INPUT CURRENT (mA) MAX3355E ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP 125 100 75 50 25 0 4.00 0 10 20 30 40 VBUS OUTPUT CURRENT (mA) 50 2.5 3.0 3.5 4.0 4.5 VCC INPUT VOLTAGE (V) _______________________________________________________________________________________ 5.0 5.5 ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP VBUS INPUT IMPEDANCE vs. TEMPERATURE VBUS OUTPUT VOLTAGE vs. VCC INPUT VOLTAGE IVBUS = 0mA 5.0 4.8 4.6 IVBUS = 8mA 4.4 MAX3355E toc05 VBUS INPUT IMPEDANCE (kΩ) 5.2 VBUS OUTPUT VOLTAGE (V) 70 MAX3355E toc04 5.4 69 68 67 66 4.2 65 4.0 2.5 3.0 3.5 4.0 4.5 5.0 -40 5.5 10 35 60 85 VBUS vs. CAPACITANCE LOAD DURING LOAD DETECTION SUPPLY CURRENT vs. TEMPERATURE MAX3355E toc07 MAX3355E toc06 20 IVBUS = 8mA SUPPLY CURRENT (mA) -15 TEMPERATURE (°C) VCC INPUT VOLTAGE (V) CVBUS = 10µF 1V/div 19 VCC = 2.6V 18 VCC = 4.0V 0 CVBUS = 96µF 1V/div 17 0 VCC = 5.5V 16 -40 -15 10 35 60 85 40ms/div TEMPERATURE (°C) _______________________________________________________________________________________ 5 MAX3355E Typical Operating Characteristics (continued) (VCC, VL = +3.3V, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF min, ESRLOAD = 1Ω max, TA = +25°C, unless otherwise noted.) ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP MAX3355E Pin Description PIN UCSP TSSOP NAME FUNCTION A1 2 VCC A2 3 ID_OUT Power Supply. +2.6V to +5.5V input supply. Bypass VCC to GND with a 1µF capacitor. A3 5 STATUS1 Status Output 1. Provides output voltage detection for use during HNP handshaking (Tables 1 and 2). A4 6 STATUS2 Status Output 2. Provides output voltage detection for use during HNP handshaking (Tables 1 and 2). B1 1 VBUS USB Supply. VBUS provides a nominal +5.0V output when ID_IN is low and OFFVBUS is high. VBUS is lower than +2.1V when ID_IN is open or a load greater than 96.5µF is sensed. VBUS can be backdriven to +6.0V without any consequence. Bypass VBUS to GND with a 1µF capacitor. B2 4 OFFVBUS B3 11 SHDN Shutdown. Connect SHDN to GND to enter shutdown and reduce supply current to less than 1µA. Connect SHDN to VL for normal operation. B4 9 VL Logic Supply. VL sets the logic output high voltage and logic input high threshold. VL must be between +1.65V and VCC. C1 14 C+ Charge-Pump Positive Connection C2 13 C- Charge-Pump Negative Connection C3 12 GND Ground C4 10 ID_IN Device ID. ID_IN is internally pulled up to VCC. Leave ID_IN open for device B and connect ID_IN to GND for device A. — 7, 8 N.C. No Connection Device ID Output. Output of ID_IN level translated to VL. VBUS Off. Turns the internal charge pump providing VBUS on and off. Typical Application Circuit VCC C+ VCC 1µF VL C1 0.1µF C- VL 0.1µF MAX3355E OFFVBUS VBUS ID_OUT CLOAD 1µF STATUS1 STATUS2 µP SHDN OTG SIE 6 ID_IN GND USB OTG CONNECTOR D+ D- _______________________________________________________________________________________ ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP USB OTG is an emerging USB standard that enables devices to talk in a peer-to-peer manner on a USB bus. OTG allows peripherals and mobile devices such as PDAs, cellular phones, and digital cameras to be attached directly to one another without requiring a PC host. The MAX3355E integrates a charge pump and comparators to enable a system with an integrated USB OTG dual-role transceiver to function as a USB OTG dual-role device. The MAX3355E’s internal charge pump supplies V BUS power and signaling as defined in On-the-Go Supplement: USB 2.0, Revision 1.0. The MAX3355E’s internal level-detection comparators monitor important VBUS voltages needed to support SRP and HNP. Charge Pump The MAX3355E provides power for the VBUS line using an internal charge pump. The charge pump provides an OTG-compliant output on VBUS while sourcing 8mA load current. The charge pump can be powered from voltages between +2.6V and +5.5V. A 0.1µF flying capacitor, connected between C+ and C-, and a 1µF (min) decoupling reservoir capacitor on V BUS are required for proper operation. The charge pump is active if OFFVBUS is connected to VL and the MAX3355E is configured as device A (ID_IN connected to GND). To minimize VBUS ripple, select a reservoir capacitor value between 1µF and 6.8µF. The charge-pump output is protected from short-circuit conditions on VBUS by an internal current clamp that limits the VBUS current to 200mA. Current Generator Table 1. Status Bit Significance STATUS1 STATUS2 SIGNIFICANCE 0 0 VBUS < VTHSESEND 1 0 VTHSESEND < VBUS < VTHSESVLD 0 1 VTHSESVLD < VBUS < VTHVBUSVLD 1 1 VBUS > VTHVBUSVLD STATUS2 SIGNIFICANCE 0 1 VBUS < VTH,SHDN 0 0 VBUS > VTH,SHDN Device ID Table 3. Device ID ID_IN Comparators The MAX3355E contains internal comparators for monitoring the VBUS voltage. The status of VBUS is summarized in two status outputs: STATUS1 and STATUS2. The status outputs can be used to negotiate for the USB OTG bus. The VBUS status is conveyed according to Table 1. While in shutdown mode, the STATUS2 output can be used to indicate VBUS voltage (Table 2). Table 2. Status Bit Shutdown Functionality (SHDN = GND) STATUS1 An internal current generator injects up to 600µA of current onto the VBUS line. The current generator is stable over the supply voltage variation. The current generator is connected to VBUS when OFFVBUS and SHDN are 1 and ID_IN is open. It remains connected for tVBUSCHRG or until the VBUS line voltage exceeds the lower of VCC and 4.82V. ID_OUT CONFIGURATION 0 0 Device A Open VL Device B Configure the MAX3355E as device A by connecting ID_IN to GND and as device B by leaving ID_IN open (Table 3). ID_IN is level translated to VL and provided as an output at ID_OUT. VL sets the logic output high level. ID_IN is internally pulled up to VCC. Table 4. Function Select SHDN OFFVBUS ID_IN VBUS CHARGE PUMP COMPARATORS 0 X X RINVBUS Inactive Inactive 1 0 X RINVBUS Inactive Active 1 1 0 5V Active Active 1 1 1 RINVBUS (Note 5) Inactive Active Note: The 600µA current source is supplied for tVBUSCHRG (see the Current Generator section). _______________________________________________________________________________________ 7 MAX3355E Detailed Description MAX3355E ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP RC 1MΩ CHARGE-CURRENTLIMIT RESISTOR HIGHVOLTAGE DC SOURCE Cs 100pF RD 1.5kΩ RC 50Ω to 100Ω DISCHARGE RESISTANCE CHARGE-CURRENTLIMIT RESISTOR DEVICE UNDER TEST STORAGE CAPACITOR Ir PEAK-TO-PEAK RINGING (NOT DRAWN TO SCALE) AMPERES 36.8% 10% 0 0 tRL TIME tDL CURRENT WAVEFORM Figure 2. Human Body Current Waveform OFFVBUS Connect OFFVBUS to GND to disable VBUS and the charge pump (Table 4). For normal VBUS operation, connect OFFVBUS to VL. When OFFVBUS = GND, VBUS impedance is between 40kΩ to 100kΩ as defined in Onthe-Go Supplement: USB 2.0, Revision 1.0. SHDN The MAX3355E shutdown mode reduces supply current to less than 1µA. To enter shutdown mode, connect SHDN to GND. Shutdown mode disables the charge pump and comparators (Table 4). While in shutdown mode, the STATUS1 output defaults to logic 0 and STATUS2 indicates VBUS. During shutdown, if VBUS is externally driven above VTH,SHDN (defined in the Comparators section), the MAX3355E sinks current from VCC. Applications Information ±15kV ESD Protection To protect the MAX3355E against ESD, ID_IN and VBUS 8 Cs 150pF DISCHARGE RESISTANCE STORAGE CAPACITOR DEVICE UNDER TEST Figure 3. IEC 1000-4-2 ESD Test Model Figure 1. Human Body ESD Test Model IP 100% 90% HIGHVOLTAGE DC SOURCE RD 330Ω have extra protection against static electricity to protect the device up to ±15kV. For ±15kV protection on VBUS, a 1µF capacitor must be connected from VBUS to GND as close to the device as possible. The ESD structures withstand high ESD in all states—normal operation, shutdown, and powered down. ESD protection can be tested in various ways. The ID_IN input and VBUS are characterized for protection to the following limits: 1) ±15kV using the Human Body Model 2) ±8kV using the IEC 1000-4-2 Contact Discharge method 3) ±15kV using the IEC 1000-4-2 Air-Gap Discharge method ESD performance depends on a variety of conditions. Contact Maxim for a reliability report that documents test setup, test methodology, and test results. Human Body Model Figure 1 shows the Human Body Model and Figure 2 shows the current waveform it generates when discharged into a low impedance. This model consists of a 100pF capacitor charged to the ESD voltage of interest, which is then discharged into the test device through a 1.5kΩ resistor. IEC 1000-4-2 The IEC 1000-4-2 standard covers ESD testing and performance of finished equipment. It does not specifically refer to integrated circuits. The MAX3355E helps the user design equipment that meets Level 4 of IEC 1000-4-2, without the need for additional ESD-protection components. The major difference between tests done using the Human Body Model and IEC 1000-4-2 is a higher peak current in IEC 1000-4-2. This occurs because series resistance is lower in the IEC 1000-4-2 model. Hence, the ESD withstand voltage measured to _______________________________________________________________________________________ ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP Machine Model The Machine Model for ESD tests all pins using a 200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by contact that occurs with handling and assembly during manufacturing. All pins require this protection during manufacturing. After PC board assembly, the Machine Model is less relevant to I/O ports. Layout Considerations The MAX3355E charge-pump switching frequency makes proper layout important to ensure stability and maintain the output voltage under all loads. For best performance, minimize the distance between the capacitors and the MAX3355E. UCSP Applications Information For the latest application details on UCSP construction, dimensions, tape-carrier information, printed circuit board techniques, bump-pad layout, and recommended reflow temperature profile, as well as the latest information on reliability testing results, refer to Maxim Application Note: UCSP–A Wafer-Level Chip-Scale Package available on Maxim’s web site at www.maxim-ic.com/ucsp. Pin Configurations TOP VIEW TOP VIEW VBUS 1 14 C+ VCC 2 13 C- ID_OUT 3 12 GND OFFVBUS 4 MAX3355E 10 ID_IN STATUS2 6 9 VL N.C. 7 8 N.C. TSSOP 2 3 4 MAX3355E VCC ID_OUT STATUS1 STATUS2 A 11 SHDN STATUS1 5 1 VBUS OFFVBUS SHDN VL C+ C- GND ID_IN B C UCSP Chip Information TRANSISTOR COUNT: 1601 PROCESS: BiCMOS _______________________________________________________________________________________ 9 MAX3355E IEC 1000-4-2 is generally lower than that measured using the Human Body Model. Figure 3 shows the IEC 1000-4-2 model. The Air-Gap Discharge test involves approaching the device with a charged probe. The contact-discharge method connects the probe to the device before the probe is energized. Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) 12L, UCSP 4x3.EPS MAX3355E ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP PACKAGE OUTLINE, 4x3 UCSP 21-0104 MAX3355E Package Code: B12-1 10 ______________________________________________________________________________________ F 1 1 ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP TSSOP4.40mm.EPS Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11 © 2003 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products. MAX3355E Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.)