NCEPOWER 20N65C3

NCE20N65T
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
VDS
650
V
technology and design to provide excellent RDS(ON) with low
RDS(ON)
190
mΩ
gate charge. This super junction MOSFET fits the industry’s
ID
20
A
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
Application
●
Power factor correction(PFC)
●
Switched mode power supplies(SMPS)
●
Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20N65T
TO-247
20N65C3
TO-247
Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V)
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
ID (DC)
(Note 1)
IDM (pluse)
Pulsed drain current
Table 1.
Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =
125 °C
PD
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
(Note 2)
Single pulse avalanche energy
(Note 1)
Avalanche current
Wuxi NCE Power Semiconductor Co., Ltd
dv/dt
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NCE20N65T
Unit
650
V
±30
V
20
A
12.5
A
60
A
50
V/ns
208
W
1.67
W/°C
EAS
690
mJ
IAR
20
A
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NCE20N65T
Pb-Free Product
Repetitive Avalanche energy ,tAR limited by Tjmax
EAR
1
mJ
TJ,TSTG
-55...+150
°C
Symbol
NCE20N65T
Unit
Thermal Resistance,Junction-to-Case(Maximum)
RthJC
0.6
°C /W
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJA
62
°C /W
(Note 1)
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2.
Table 3.
Thermal Characteristic
Parameter
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
650
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=650V,VGS=0V
1
μA
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=650V,VGS=0V
100
μA
Gate-Body Leakage Current
IGSS
VGS=±30V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10A
190
mΩ
Forward Transconductance
gFS
VDS = 20V, ID = 10A
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.5
V
3
Dynamic Characteristics
VDS=100V,VGS=0V,
F=1.0MHz
VDS=480V,ID=20A,
VGS=10V
17.5
S
2300
PF
95
PF
7
PF
85
114
nC
11
nC
33
nC
10
nS
nS
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=380V,ID=20A,
5
td(off)
RG=3.6Ω,VGS=10V
67
100
nS
4
12
nS
20
A
60
A
1.3
V
Turn-Off Delay Time
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
Pulsed Source-drain current(Body Diode)
ISDM
Forward on voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
TC=25°C
Tj=25°C,ISD=20A,VGS=0V
Tj=25°C,IF=20A,di/dt=100A/μs
0.9
500
nS
11
nC
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20N65T
Pb-Free Product
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE20N65T
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Figure3. Source-Drain Diode Forward Voltage
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Figure7. RDS(ON) vs Junction Temperature
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NCE20N65T
Pb-Free Product
Figure8. BVDSS vs Junction Temperature
Figure10. Gate charge waveforms
Figure9. Maximum ID vs Junction Temperature
Figure10. Capacitance
Figure11. Transient Thermal Impedance for NCE20N65T
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20N65T
Pb-Free Product
Test circuit 1) Gate charge test circuit & Waveform
2)Switch Time Test Circuit:
3)Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20N65T
Pb-Free Product
TO-247 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.850
5.150
0.191
0.200
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
2.800
3.200
0.110
0.126
b2
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500 REF
0.138 REF
E2
3.600 REF
0.142 REF
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Φ
7.100
7.300
0.280
0.287
e
5.450 TYP
0.215 TYP
H
5.980 REF
0.235 REF
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
ATTENTION:
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Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
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of NCE Power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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