NCE20N65T Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) 190 mΩ gate charge. This super junction MOSFET fits the industry’s ID 20 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20N65T TO-247 20N65C3 TO-247 Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Table 1. Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj = 125 °C PD Maximum Power Dissipation(Tc=25℃) Derate above 25°C (Note 2) Single pulse avalanche energy (Note 1) Avalanche current Wuxi NCE Power Semiconductor Co., Ltd dv/dt Page 1 NCE20N65T Unit 650 V ±30 V 20 A 12.5 A 60 A 50 V/ns 208 W 1.67 W/°C EAS 690 mJ IAR 20 A v1.0 NCE20N65T Pb-Free Product Repetitive Avalanche energy ，tAR limited by Tjmax EAR 1 mJ TJ,TSTG -55...+150 °C Symbol NCE20N65T Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 0.6 °C /W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62 °C /W (Note 1) Operating Junction and Storage Temperature Range * limited by maximum junction temperature Table 2. Table 3. Thermal Characteristic Parameter Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 650 Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=650V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A 190 mΩ Forward Transconductance gFS VDS = 20V, ID = 10A Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 V 3 Dynamic Characteristics VDS=100V,VGS=0V, F=1.0MHz VDS=480V,ID=20A, VGS=10V 17.5 S 2300 PF 95 PF 7 PF 85 114 nC 11 nC 33 nC 10 nS nS Switching times Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=380V,ID=20A, 5 td(off) RG=3.6Ω,VGS=10V 67 100 nS 4 12 nS 20 A 60 A 1.3 V Turn-Off Delay Time Turn-Off Fall Time tf Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD Pulsed Source-drain current(Body Diode) ISDM Forward on voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TC=25°C Tj=25°C,ISD=20A,VGS=0V Tj=25°C,IF=20A,di/dt=100A/μs 0.9 500 nS 11 nC Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 NCE20N65T Pb-Free Product TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area for NCE20N65T Figure4. Output characteristics Figure5. Transfer characteristics Figure6. Static drain-source on resistance Wuxi NCE Power Semiconductor Co., Ltd Figure3. Source-Drain Diode Forward Voltage Page 3 Figure7. RDS(ON) vs Junction Temperature v1.0 NCE20N65T Pb-Free Product Figure8. BVDSS vs Junction Temperature Figure10. Gate charge waveforms Figure9. Maximum ID vs Junction Temperature Figure10. Capacitance Figure11. Transient Thermal Impedance for NCE20N65T Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 NCE20N65T Pb-Free Product Test circuit 1） Gate charge test circuit & Waveform 2）Switch Time Test Circuit： 3）Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 NCE20N65T Pb-Free Product TO-247 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 REF 0.138 REF E2 3.600 REF 0.142 REF L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Φ 7.100 7.300 0.280 0.287 e 5.450 TYP 0.215 TYP H 5.980 REF 0.235 REF Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 NCE20N65T Pb-Free Product ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0