ETC AM49PDL640AG

Am49PDL640AG
Data Sheet
-XO\
7KHIROORZLQJGRFXPHQWVSHFLILHV6SDQVLRQPHPRU\SURGXFWVWKDWDUHQRZRIIHUHGE\ERWK$GYDQFHG
0LFUR'HYLFHVDQG)XMLWVX$OWKRXJKWKHGRFXPHQWLVPDUNHGZLWKWKHQDPHRIWKHFRPSDQ\WKDWRULJ
LQDOO\ GHYHORSHG WKHVSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EHRIIHUHG WR FXVWRPHUVRIERWK $0' DQG
)XMLWVX
Continuity of Specifications
7KHUHLVQRFKDQJHWRWKLVGDWDVKHHWDVDUHVXOWRIRIIHULQJWKHGHYLFHDVD6SDQVLRQSURGXFW$Q\
FKDQJHVWKDWKDYHEHHQPDGHDUHWKHUHVXOWRIQRUPDOGDWDVKHHWLPSURYHPHQWDQGDUHQRWHGLQWKH
GRFXPHQWUHYLVLRQVXPPDU\ZKHUHVXSSRUWHG)XWXUHURXWLQHUHYLVLRQVZLOORFFXUZKHQDSSURSULDWH
DQGFKDQJHVZLOOEHQRWHGLQDUHYLVLRQVXPPDU\
Continuity of Ordering Part Numbers
$0'DQG)XMLWVXFRQWLQXHWRVXSSRUWH[LVWLQJSDUWQXPEHUVEHJLQQLQJZLWK³$P´DQG³0%0´7RRUGHU
WKHVHSURGXFWVSOHDVHXVHRQO\WKH2UGHULQJ3DUW1XPEHUVOLVWHGLQWKLVGRFXPHQW
For More Information
3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ
PHPRU\VROXWLRQV
Publication Number 30049 Revision A
Amendment +4 Issue Date August 5, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
PRELIMINARY
Am49PDL640AG
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and
16 Mbit (1 M x 16-Bit) Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
■ 20 year data retention at 125°C
MCP Features
■ Power supply voltage of 2.7 to 3.1 volt
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ High performance
— Access time as fast as 70 ns initial/ 25 ns subsequent
■ Package
— 73-Ball FBGA
■ Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
■ Operating Temperature
■ CFI (Common Flash Interface) complaint
— –25°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■ Flex Bank architecture
— 4 separate banks, with up to two simultaneous operations
per device
— Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)
— Bank B: 24 Mbit (32 Kw x 48)
— Bank C: 24 Mbit (32 Kw x 48)
— Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
■ Manufactured on 0.17 µm process technology
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
— Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
■ Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■ Boot sectors
— Top and bottom boot sectors in the same device
■ Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast as 70 ns
— Program time: 4 µs/word typical utilizing Accelerate function
■ Ultra low power consumption (typical values)
— 23 mA active read current
— 15 mA program/erase current
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per sector
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
■ Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
■ WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1, 140, and
141, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
■ Persistent Sector Protection
— A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at VCC level
■ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
Pseudo SRAM Features
■ Power dissipation
— Operating: 30 mA maximum
— Standby: 100 µA maximum
— Deep Power-down current: 10 µA
■ CE1s# and CE2s Chip Select
■ Power down features using CE1s# and CE2s
■ Data retention supply voltage: 2.7 to 3.1 volt
■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice. 8/6/03
Publication# 30049 Rev: A Amendment/+4
Issue Date: August 5, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
P R E L I M I N A R Y
GENERAL DESCRIPTION
Am29PDL640G Features
The Am29PDL640G is a 64 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device organized as 4 Mwords. The device is offered in 73-ball
Fine-pitch BGA packages. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed
in-system or in standard EPROM programmers. A 12.0 V
VPP is not required for write or erase operations.
The device offers fast page access times of 25, 30, and 45
ns, with corresponding random access times of 65, 70, 85,
and 90 ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
Simultaneous Read/Write Operation with
Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The device can improve overall system performance by allowing a
host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero
latency (with two simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improving system performance.
The device can be organized in both top and bottom sector
configurations. The banks are organized as follows:
Bank
Sectors
A
8 Mbit (4 Kw x 8 and 32 Kw x 15)
B
24 Mbit (32 Kw x 48)
C
24 Mbit (32 Kw x 48)
D
8 Mbit (4 Kw x 8 and 32 Kw x 15)
Page Mode Features
The device is AC timing, input/output, and package compatible with 4 Mbit x16 page mode mask ROM. The page size
is 8 words.
After initial page access is accomplished, the page mode operation provides fast read access speed of random locations
within that page.
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V
to 3.1 V) for both read and write functions. Internally generated and regulated voltages are provided for the program
and erase operations.
2
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard
microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system
or via programming equipment.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Program area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5
Flash Memory Block Diagram . . . . . . . . . . . . . . . . 6
PSRAM Block Diagram . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 7
Special Package Handling Instructions .................................... 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
MCP Device Bus Operations . . . . . . . . . . . . . . . . . 9
Random Read (Non-Page Read) ........................................ 11
Page Mode Read ................................................................ 11
Table 2. Page Select .......................................................................11
Simultaneous Operation ......................................................... 11
Table 3. Bank Select .......................................................................11
Writing Commands/Command Sequences ............................ 11
Accelerated Program Operation .......................................... 12
Autoselect Functions ........................................................... 12
Automatic Sleep Mode ........................................................... 12
RESET#: Hardware Reset Pin ............................................... 12
Output Disable Mode .............................................................. 13
Table 4. Am29PDL640G Sector Architecture .................................13
Table 5. Bank Address ....................................................................14
Table 6. SecSiTM SectorSecure Sector Addresses .........................14
Table 7. Am29PDL640G Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................15
Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . 16
Persistent Sector Protection ................................................... 16
Persistent Protection Bit (PPB) ............................................ 16
Persistent Protection Bit Lock (PPB Lock) .......................... 16
Dynamic Protection Bit (DYB) ............................................. 16
Word Program Command Sequence ...................................... 28
Unlock Bypass Command Sequence .................................. 28
Figure 4. Program Operation ......................................................... 29
Chip Erase Command Sequence ........................................... 29
Sector Erase Command Sequence ........................................ 29
Erase Suspend/Erase Resume Commands ........................... 30
Figure 5. Erase Operation.............................................................. 30
Password Program Command ................................................ 30
Password Verify Command .................................................... 31
Password Protection Mode Locking Bit Program Command .. 31
Persistent Sector Protection Mode Locking Bit Program Command ....................................................................................... 31
SecSi Sector Protection Bit Program Command .................... 31
PPB Lock Bit Set Command ................................................... 31
DYB Write Command ............................................................. 31
Password Unlock Command .................................................. 32
PPB Program Command ........................................................ 32
All PPB Erase Command ........................................................ 32
DYB Write Command ............................................................. 32
PPB Lock Bit Set Command ................................................... 32
PPB Status Command ............................................................ 32
PPB Lock Bit Status Command .............................................. 32
Sector Protection Status Command ....................................... 32
Table 13. Memory Array Command Definitions ............................. 33
Table 14. Sector Protection Command Definitions ........................ 34
Write Operation Status . . . . . . . . . . . . . . . . . . . . 35
DQ7: Data# Polling ................................................................. 35
Figure 6. Data# Polling Algorithm .................................................. 35
DQ6: Toggle Bit I .................................................................... 36
Table 8. Sector Protection Schemes ...............................................17
Figure 7. Toggle Bit Algorithm........................................................ 36
Persistent Sector Protection Mode Locking Bit ................... 17
Password Protection Mode ..................................................... 17
Password and Password Mode Locking Bit ........................ 18
64-bit Password ................................................................... 18
Write Protect (WP#) ................................................................ 18
Persistent Protection Bit Lock .............................................. 18
High Voltage Sector Protection .............................................. 19
DQ2: Toggle Bit II ................................................................... 37
Reading Toggle Bits DQ6/DQ2 ............................................... 37
DQ5: Exceeded Timing Limits ................................................ 37
DQ3: Sector Erase Timer ....................................................... 37
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms ...................................................... 20
Temporary Sector Unprotect .................................................. 21
Figure 2. Temporary Sector Unprotect Operation........................... 21
SecSi™ (Secured Silicon) Sector
SectorFlash Memory Region ................................................. 21
SecSi Sector Protection Bit ................................................. 22
Figure 3. SecSi Sector Protect Verify.............................................. 22
Hardware Data Protection ...................................................... 23
Low VCC Write Inhibit ......................................................... 23
Write Pulse “Glitch” Protection ............................................ 23
Logical Inhibit ...................................................................... 23
Power-Up Write Inhibit ......................................................... 23
Common Flash Memory Interface (CFI) . . . . . . . 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 27
Reading Array Data ................................................................ 27
Reset Command ..................................................................... 27
Autoselect Command Sequence ............................................ 27
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 28
August 5, 2003
Table 15. Write Operation Status ................................................... 38
pSRAM Power Down . . . . . . . . . . . . . . . . . . . . . . 39
Figure 8. State Diagram ................................................................. 39
Table 16. Standby Mode Characteristics ....................................... 39
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 40
Figure 9. Maximum Negative Overshoot Waveform ...................... 40
Figure 10. Maximum Positive Overshoot Waveform...................... 40
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 41
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 11. Test Setup.................................................................... 43
Figure 12. Input Waveforms and Measurement Levels ................. 43
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 44
pSRAM CE#s Timing .............................................................. 44
Figure 13. Timing Diagram for Alternating
Between pSRAM to Flash .............................................................. 44
Read-Only Operations ........................................................... 45
Figure 14. Read Operation Timings ............................................... 45
Figure 15. Page Read Operation Timings...................................... 46
Hardware Reset (RESET#) .................................................... 47
Figure 16. Reset Timings ............................................................... 47
Erase and Program Operations .............................................. 48
Figure 17. Program Operation Timings.......................................... 49
Figure 18. Accelerated Program Timing Diagram.......................... 49
Figure 19. Chip/Sector Erase Operation Timings .......................... 50
Am49PDL640AG
3
P R E L I M I N A R Y
Figure 20. Back-to-back Read/Write Cycle Timings ....................... 51
Figure 21. Data# Polling Timings (During Embedded Algorithms).. 51
Figure 22. Toggle Bit Timings (During Embedded Algorithms)....... 52
Figure 23. DQ2 vs. DQ6.................................................................. 52
Temporary Sector Unprotect .................................................. 53
Figure 24. Temporary Sector Unprotect Timing Diagram ............... 53
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram .............................................................. 54
Alternate CE#f Controlled Erase and Program Operations .... 55
Figure 26. Flash Alternate CE#f Controlled Write (Erase/Program)
Operation Timings........................................................................... 56
Power Up Time ....................................................................... 57
Figure 27. Power Up ....................................................................... 57
Figure 28. VCCS Slew Rate............................................................ 57
Read Cycle ............................................................................. 58
Read Cycle ............................................................................. 59
Write Cycle ............................................................................. 60
Figure 31. pSRAM Write Cycle–WE# Controlled ...........................
Figure 32. pSRAM Write Cycle–CS1# Controlled..........................
Figure 33. pSRAM Write Cycle–UB#, LB# Controlled ...................
Figure 34. Deep Power Down Mode ..............................................
Figure 35. Abnormal Timing...........................................................
Figure 36. Avoidable Timing 1 .......................................................
Figure 37. Avoidable Timing 2 .......................................................
61
61
62
62
63
63
63
Erase And Programming Performance . . . . . . . 64
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 64
Package Pin Capacitance. . . . . . . . . . . . . . . . . . . 64
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 64
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 65
FLK073—73-Ball Fine-Pitch Grid Array 13 x 9 mm ................ 65
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 29. pSRAM Read Cycle–Address Controlled ...................... 59
Figure 30. pSRAM Read Cycle–CS1# Controlled........................... 59
4
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
PRODUCT SELECTOR GUIDE
Part Number
Speed
Options
Am49PDL640AG
Standard Voltage Range:
VCC = 2.7–3.1 V
Flash Memory
Pseudo SRAM
70
85
70
85
Max Access Time (ns) tACC
70
85
70
85
Max Page Access (ns) tPACC
25
30
N/A
N/A
CE#f Access (ns) tCE
70
85
70
85
OE# Access (ns) tOE
25
30
35
40
MCP BLOCK DIAGRAM
VCCf
VSS
A21 to A0
RY/BY#
A21 to A0
WP#/ACC
RESET#
CE#f
64 MBit
Flash Memory
DQ15 to DQ0
DQ15 to DQ0
VCCs/VCCQ
VSS/VSSQ
A0
toto
A19
A19
A0
LB#s
UB#s
WE#
OE#
CE1#s
CE2s
August 5, 2003
16 MBit
Pseudo SRAM
DQ15 to DQ0
Am49PDL640AG
5
P R E L I M I N A R Y
FLASH MEMORY BLOCK DIAGRAM
VCC
VSS
OE#
Mux
Bank 1
Bank 2 Address
Bank 2
X-Decoder
A21–A0
STATE
CONTROL
&
COMMAND
REGISTER
CE#
WP#/ACC
Status
DQ15–DQ0
Control
Mux
DQ15–DQ0
DQ15–DQ0
Bank 3
Bank 3 Address
X-Decoder
A21–A0
Bank 4 Address
Y-gate
A0–A21
X-Decoder
DQ15–DQ0
RESET#
WE#
DQ15–DQ0
RY/BY#
DQ15–DQ0
A21–A0
X-Decoder
Y-gate
Bank 1 Address
A21–A0
Bank 4
Mux
PSRAM BLOCK DIAGRAM
Standby/Deep Power
Down Mode Control
Refresh Control
VCC
VSS
Refresh
Counter
Address
Buffer
A19-A0
Memory Cell Array
1 M x 16
Row
Address
Decoder
DQ7-DQ0
Input
Data
Contol
DQ15-DQ8
Sense AMP
Output
Data
Control
Column Decoder
Address Buffer
CE#1
CE2
OE#
WE#
Control
Logic
LB#
UB#
6
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
CONNECTION DIAGRAM
73-Ball FBGA
Top View
A1
A10
NC
NC
B1
B5
B6
B10
NC
NC
NC
NC
C5
C6
C7
C8
LB#s WP#/ACC WE#
A8
A11
D7
D8
D9
UB#s RESET#1 CE2s
A19
A12
A15
C1
C3
NC
A7
C4
D3
A3
A6
E2
E3
E4
E5
E6
E7
E8
E9
A2
A5
A18
RY/BY
A20
A9
A13
A21
F1
F2
F3
F4
F7
F8
F9
F10
NC
A1
A4
A17
A10
A14
NC
NC
G1
G2
G3
G4
G7
G8
G9
G10
NC
A0
VSS
DQ1
DQ6
NC
A16
NC
H2
H3
H4
H5
H6
H7
H8
H9
CE#f
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
NC
J2
J3
J4
J5
J6
J7
J8
J9
CE1#s
DQ0
DQ10
VCCf
VCCs
DQ12
DQ7
VSS
K3
K4
K5
K6
K7
K8
DQ8
DQ2
DQ11
NC
DQ5
DQ14
L1
L5
L6
L10
NC
NC
NC
NC
D5
D6
M1
M10
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (BGA). The package and/or data
August 5, 2003
Pseudo
SRAM only
Shared
D2
D4
Flash only
integrity may be compromised if the package body is
exposed to temperatures above 150°C for prolonged
periods of time.
Am49PDL640AG
7
P R E L I M I N A R Y
PIN DESCRIPTION
LOGIC SYMBOL
A19–A0
= 20 Address Inputs (Common)
A21–A20
= 2 Address Inputs (Flash)
DQ15–DQ0
= 16 Data Inputs/Outputs (Common)
CE#f
= Chip Enable (Flash)
A21–A20
CE#1s
= Chip Enable 1 (pSRAM)
CE#f
CE2s
= Chip Enable 2 (pSRAM)
CE#1s
OE#
= Output Enable (Common)
CE2s
WE#
= Write Enable (Common)
OE#
RY/BY#
= Ready/Busy Output
WE#
UB#s
= Upper Byte Control (pSRAM)
WP#/ACC
LB#s
= Lower Byte Control (pSRAM)
RESET#
RESET#
= Hardware Reset Pin, Active Low
UB#s
WP#/ACC
= Hardware Write Protect/
Acceleration Pin (Flash)
LB#s
VCCf
= Flash 3.0 volt-only single power supply (see Product Selector Guide for
speed options and voltage supply
tolerances)
VCCs
= pSRAM Power Supply
VSS
= Device Ground (Common)
NC
= Pin Not Connected Internally
8
19
A19–A0
Am49PDL640AG
16 or 8
DQ15–DQ0
RY/BY#
August 5, 2003
P R E L I M I N A R Y
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am49PDL640
A
G
70
N
T
TAPE AND REEL
T
= 7 inches
S
= 13 inches
TEMPERATURE RANGE
N
= Light Industrial (–25°C to +85°C)
SPEED OPTION
See Product Selector Guide and Valid Combinations
PROCESS TECHNOLOGY
G
= 0.17 µm
Pseudo SRAM DEVICE DENSITY
A
=
16 Mbits
AMD DEVICE NUMBER/DESCRIPTION
Am49PDL640AG
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29PDL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash
Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
MCP DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
August 5, 2003
Order Number
Package Marking
Am49PDL640AG70N
T, S
M49000001Y
Am49PDL640AG85N
T, S
M49000001Z
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Tables 1-2 lists the device bus operations, the
inputs and control levels they require, and the resulting output. The following subsections describe each of
these operations in further detail.
Am49PDL640AG
9
P R E L I M I N A R Y
Table 1.
Operation
(Notes 1, 2)
CE#f
Read from Active
Flash
(Note 7)
Write to Active
Flash
(Note 7)
(Note 8)
(Note 8)
L
L
Device Bus Operations—Flash Word Mode, CIOf = VIH
CE1#s
CE2s
H
H
H
L
H
H
H
L
WP#/
ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
H
L/H
DOUT
DOUT
X
H
(Note 5)
DIN
DIN
OE#
WE#
Addr.
LB#s
(Note 3)
UB#s
RESET#
(Note 3)
L
H
AIN
X
X
H
L
AIN
X
Standby
VCC ±
0.3 V
H
H
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
Deep Power-down Standby
VCC ±
0.3 V
H
L
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
L
L
H
H
H
X
X
X
H
H
X
X
X
H
L/H
High-Z
High-Z
H
H
H
L
X
X
X
X
X
L
L/H
High-Z
High-Z
H
H
H
L
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
VID
L/H
DIN
X
H
L
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
VID
(Note 6)
DIN
X
X
X
X
X
X
VID
(Note 6)
DIN
High-Z
L
L
DOUT
DOUT
H
L
High-Z
DOUT
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
DIN
High-Z
Output Disable (Note 9)
Flash Hardware
Reset
(Note 7)
(Note 8)
X
(Note 7)
Sector Protect
(Notes 5, 9)
(Note 8)
L
(Note 7)
Sector Unprotect
(Notes 5, 9)
Temporary
Sector Unprotect
Read from pSRAM
Write to pSRAM
(Note 8)
(Note 7)
(Note 8)
L
X
H
H
H
L
H
H
H
L
H
H
H
L
L
L
H
H
L
H
X
L
AIN
AIN
L
H
H
H
X
X
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector Address, AIN =
Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are
inhibited.
2.
Do not apply CE#f1 = VIL, CE1#s = VIL and CE2s = VIH at the
same time.
3.
Don’t care or open LB#s or UB#s.
4.
If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC
= VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by
40%.
5.
10
6.
If WP#/ACC = VIL, the two outermost boot sectors remain
protected. If WP#/ACC = VIH, the two outermost boot sector
protection depends on whether they were last protected or
unprotected using the method described in “Sector/Sector Block
Protection and Unprotection”. If WP#/ACC = VHH, all sectors will
be unprotected.
7.
Data will be retained in pSRAM.
8.
Data will be lost in pSRAM.
9.
CE# inputs on both flash devices may be held low for this operation.
The sector protect and sector unprotect functions may also be
implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
Requirements for Reading Array Data
Table 2.
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
Refer to the AC Read-Only Operations table for timing
specifications and to Figure 14 for the timing diagram.
ICC1 in the DC Characteristics table represents the active current specification for reading array data.
Random Read (Non-Page Read)
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t CE ) is the delay from the stable addresses and stable CE# to valid data at the output inputs. The output enable access time is the delay from
the falling edge of the OE# to valid data at the output
inputs (assuming the addresses have been stable for
at least tACC–tOE time).
Page Select
Word
A2
A1
A0
Word 0
0
0
0
Word 1
0
0
1
Word 2
0
1
0
Word 3
0
1
1
Word 4
1
0
0
Word 5
1
0
1
Word 6
1
1
0
Word 7
1
1
1
Simultaneous Operation
The device is capable of reading data from one bank
of memory while a program or erase operation is in
progress in another bank of memory (simultaneous
operation), in addition to the conventional features
(read, program, erase-suspend read, and erase-suspend program). The bank selected can be selected by
bank addresses (A21–A19) with zero latency.
The simultaneous operation can execute multi-function mode in the same bank.
Table 3.
Bank Select
Bank
A21–A19
Page Mode Read
Bank A
000
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read operation. This mode provides faster read access speed
for random locations within a page. The page size of
the device is 8 words, with the appropriate page being
selected by the higher address bits A21–A3 and the
LSB bits A2–A0 determining the specific word within
that page. This is an asynchronous operation with the
microprocessor supplying the specific word location.
Bank B
001, 010, 011
Bank C
100, 101, 110
Bank D
111
The random or initial page access is equal to tACC or
tCE and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access,
the access time is tACC or tCE. Here again, CE# selects
the device and OE# is the output control and should
be used to gate data to the output inputs if the device
is selected. Fast page mode accesses are obtained by
keeping A21–A3 constant and changing A2 to A0 to
select the specific word within that page.
August 5, 2003
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word, instead of four. The “Word Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 4 indicates the address
space that each sector occupies. A “bank address” is
the address bits required to uniquely select a bank.
Similarly, a “sector address” refers to the address bits
Am49PDL640AG
11
P R E L I M I N A R Y
required to uniquely select a sector. The “Command
Definitions” section has details on erasing a sector or
the entire chip, or suspending/resuming the erase operation.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The Flash
AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This function is primarily intended to allow faster manufacturing throughput at the
factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin should be raised to VCC when not in
use. That is, the WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VIO ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VIO ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires standard access time (t CE ) for read access
when the device is in either of these standby modes,
before it is ready to read data.
12
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the table represents the CMOS standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
Note that during automatic sleep mode, OE# must be
at VIH before the device reduces current to the stated
sleep mode specification. ICC5 in the table represents the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is
held at VIL but not within VSS±0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t READY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded
Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
Output Disable Mode
Table 4.
When the OE# input is at VIH, output from the device is
disabled. The output pins (except for RY/BY#) are
placed in the high impedance state.
Table 4.
Am29PDL640G Sector Architecture
Sector
Sector
Address
A21–A12
Sector
Size
(Kwords)
SA23
0010000xxx
32
80000h–87FFFh
SA24
0010001xxx
32
88000h–8FFFFh
SA25
0010010xxx
32
90000h–97FFFh
SA26
0010011xxx
32
98000h–9FFFFh
SA27
0010100xxx
32
A0000h–A7FFFh
SA28
0010101xxx
32
A8000h–AFFFFh
Address Range
Sector
Address
A21–A12
Sector
Size
(Kwords)
Address Range
SA0
0000000000
4
00000h–00FFFh
SA29
0010110xxx
32
B0000h–B7FFFh
SA1
0000000001
4
01000h–01FFFh
SA30
0010111xxx
32
B8000h–BFFFFh
SA2
0000000010
4
02000h–02FFFh
SA31
0011000xxx
32
C0000h–C7FFFh
SA3
0000000011
4
03000h–03FFFh
SA32
0011001xxx
32
C8000h–CFFFFh
SA4
0000000100
4
04000h–04FFFh
SA33
0011010xxx
32
D0000h–D7FFFh
SA5
0000000101
4
05000h–05FFFh
SA34
0011011xxx
32
D8000h–DFFFFh
SA6
0000000110
4
06000h–06FFFh
SA35
0011000xxx
32
E0000h–E7FFFh
SA7
0000000111
4
07000h–07FFFh
SA36
0011101xxx
32
E8000h–EFFFFh
SA8
0000001xxx
32
08000h–0FFFFh
SA37
0011110xxx
32
F0000h–F7FFFh
SA9
0000010xxx
32
10000h–17FFFh
SA38
0011111xxx
32
F8000h–FFFFFh
Sector
SA10
0000011xxx
32
18000h–1FFFFh
SA39
0100000xxx
32
F9000h–107FFFh
SA11
0000100xxx
32
20000h–27FFFh
SA40
0100001xxx
32
108000h–10FFFFh
SA12
0000101xxx
32
28000h–2FFFFh
SA41
0100010xxx
32
110000h–117FFFh
SA13
0000110xxx
32
30000h–37FFFh
SA42
0101011xxx
32
118000h–11FFFFh
SA14
0000111xxx
32
38000h–3FFFFh
SA43
0100100xxx
32
120000h–127FFFh
SA15
0001000xxx
32
40000h–47FFFh
SA44
0100101xxx
32
128000h–12FFFFh
SA45
0100110xxx
32
130000h–137FFFh
SA46
0100111xxx
32
138000h–13FFFFh
SA47
0101000xxx
32
140000h–147FFFh
SA48
0101001xxx
32
148000h–14FFFFh
SA16
0001001xxx
32
48000h–4FFFFh
SA17
0001010xxx
32
50000h–57FFFh
SA18
0001011xxx
32
58000h–5FFFFh
SA19
0001100xxx
32
60000h–67FFFh
SA20
0001101xxx
32
68000h–6FFFFh
SA49
0101010xxx
32
150000h–157FFFh
SA21
0001101xxx
32
70000h–77FFFh
SA50
0101011xxx
32
158000h–15FFFFh
SA22
0001111xxx
32
78000h–7FFFFh
SA51
0101100xxx
32
160000h–167FFFh
SA52
0101101xxx
32
168000h–16FFFFh
SA53
0101110xxx
32
170000h–177FFFh
SA54
0101111xxx
32
178000h–17FFFFh
SA55
0110000xxx
32
180000h–187FFFh
SA56
0110001xxx
32
188000h–18FFFFh
SA57
0110010xxx
32
190000h–197FFFh
SA58
0110011xxx
32
198000h–19FFFFh
SA59
0100100xxx
32
1A0000h–1A7FFFh
SA60
0110101xxx
32
1A8000h–1AFFFFh
SA61
0110110xxx
32
1B0000h–1B7FFFh
SA62
0110111xxx
32
1B8000h–1BFFFFh
SA63
0111000xxx
32
1C0000h–1C7FFFh
SA64
0111001xxx
32
1C8000h–1CFFFFh
SA65
0111010xxx
32
1D0000h–1D7FFFh
SA66
0111011xxx
32
1D8000h–1DFFFFh
SA67
0111100xxx
32
1E0000h–1E7FFFh
SA68
0111101xxx
32
1E8000h–1EFFFFh
SA69
0111110xxx
32
1F0000h–1F7FFFh
SA70
0111111xxx
32
1F8000h–1FFFFFh
August 5, 2003
Bank B
Bank A
Bank
Bank
Am29PDL640G Sector Architecture
Am49PDL640AG
13
P R E L I M I N A R Y
Table 4.
Bank C
14
Table 4.
Am29PDL640G Sector Architecture
Sector
Sector
Address
A21–A12
Sector
Size
(Kwords)
Sector
Sector
Address
A21–A12
Sector
Size
(Kwords)
SA71
1000000xxx
32
SA72
1000001xxx
32
200000h–207FFFh
SA119
1110000xxx
32
380000h–387FFFh
208000h–20FFFFh
SA120
1110001xxx
32
388000h–38FFFFh
SA73
1000010xxx
32
SA74
1000011xxx
32
210000h–217FFFh
SA121
1110010xxx
32
390000h–397FFFh
218000h–21FFFFh
SA122
1110011xxx
32
398000h–39FFFFh
SA75
1000100xxx
32
220000h–227FFFh
SA123
1110100xxx
32
3A0000h–3A7FFFh
SA76
1000101xxx
32
228000h–22FFFFh
SA124
1110101xxx
32
3A8000h–3AFFFFh
SA77
1000110xxx
32
230000h–237FFFh
SA125
1110110xxx
32
3B0000h–3B7FFFh
SA78
1000111xxx
32
238000h–23FFFFh
SA126
1110111xxx
32
3B8000h–3BFFFFh
SA79
1001000xxx
32
240000h–247FFFh
SA127
1111000xxx
32
3C0000h–3C7FFFh
SA80
1001001xxx
32
248000h–24FFFFh
SA128
1111001xxx
32
3C8000h–3CFFFFh
SA81
1001010xxx
32
250000h–257FFFh
SA129
1111010xxx
32
3D0000h–3D7FFFh
SA82
1001011xxx
32
258000h–25FFFFh
SA130
1111011xxx
32
3D8000h–3DFFFFh
SA83
1001100xxx
32
260000h–267FFFh
SA131
1111100xxx
32
3E0000h–3E7FFFh
SA84
1001101xxx
32
268000h–26FFFFh
SA132
1111101xxx
32
3E8000h–3EFFFFh
SA85
1001110xxx
32
270000h–277FFFh
SA133
1111110xxx
32
3F0000h–3F7FFFh
SA86
1001111xxx
32
278000h–27FFFFh
SA134
1111111000
4
3F8000h–3F8FFFh
SA87
1010000xxx
32
280000h–28FFFFh
SA135
1111111001
4
3F9000h–3F9FFFh
SA88
1010001xxx
32
288000h–28FFFFh
SA136
1111111010
4
3FA000h–3FAFFFh
SA89
1010010xxx
32
290000h–297FFFh
SA137
1111111011
4
3FB000h–3FBFFFh
SA90
1010011xxx
32
298000h–29FFFFh
SA138
1111111100
4
3FC000h–3FCFFFh
Address Range
Bank
Bank D
Bank
Am29PDL640G Sector Architecture
Address Range
SA91
1010100xxx
32
2A0000h–2A7FFFh
SA139
1111111101
4
3FD000h–3FDFFFh
SA92
1010101xxx
32
2A8000h–2AFFFFh
SA140
1111111110
4
3FE000h–3FEFFFh
SA93
1010110xxx
32
2B0000h–2B7FFFh
SA141
1111111111
4
3FF000h–3FFFFFh
SA94
1010111xxx
32
2B8000h–2BFFFFh
SA95
1011000xxx
32
2C0000h–2C7FFFh
SA96
1011001xxx
32
2C8000h–2CFFFFh
SA97
1011010xxx
32
2D0000h–2D7FFFh
SA98
1011011xxx
32
2D8000h–2DFFFFh
SA99
1011100xxx
32
2E0000h–2E7FFFh
SA100
1011101xxx
32
2E8000h–2EFFFFh
SA101
1011110xxx
32
2F0000h–2FFFFFh
SA102
1011111xxx
32
2F8000h–2FFFFFh
SA103
1100000xxx
32
300000h–307FFFh
SA104
1100001xxx
32
308000h–30FFFFh
Device
Sector Size
Address Range
SA105
1100010xxx
32
310000h–317FFFh
Am29PDL640G
128 words
00000h–0007Fh
SA106
1100011xxx
32
318000h–31FFFFh
SA107
1100100xxx
32
320000h–327FFFh
SA108
1100101xxx
32
328000h–32FFFFh
SA109
1100110xxx
32
330000h–337FFFh
SA110
1100111xxx
32
338000h–33FFFFh
Table 5.
Bank
A
B
C
D
Table 6.
Am49PDL640AG
Bank Address
A21–A19
000
001, 010, 011
100, 101, 110
111
SecSiTM SectorSecure Sector Addresses
August 5, 2003
P R E L I M I N A R Y
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programm ing
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
When using programming equipment, the autoselect
mode requires VID on address pin A9. Address pins
must be as shown in Table 7. In addition, when verifying sector protection, the sector address must appear
on the appropriate highest order address bits (see
Table 4). Table 7 shows the remaining address bits
that are don’t care. When all necessary bits have been
set as required, the programming equipment may then
read the corresponding identifier code on DQ7–DQ0.
However, the autoselect codes can also be accessed
in-system through the command register, for instances
when the device is erased or programmed in a system
without access to high voltage on the A9 pin. The
command sequence is illustrated in Table 14. Note
that if a Bank Address (BA) on address bits A21, A20,
and A19 is asserted during the third write cycle of the
autoselect command, the host system can read autoselect data that bank and then immediately read
array data from the other bank, without exiting the autoselect mode.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 14. This method
does not require V ID . Refer to the Autoselect Command Sequence section for more information.
Table 7. Am29PDL640G Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector
A21–A12
Sector/
Sector Block Size
SA0
0000000000
4 Kwords
SA1
0000000001
4 Kwords
SA2
0000000010
4 Kwords
SA3
0000000011
4 Kwords
SA4
0000000100
4 Kwords
SA5
0000000101
4 Kwords
SA6
0000000110
4 Kwords
SA7
0000000111
4 Kwords
SA8–SA10
0000001XXX,
0000010XXX,
0000011XXX
96 (3x32) Kwords
August 5, 2003
A21–A12
Sector/
Sector Block Size
SA11–SA14
00001XXXXX
128 (4x32) Kwords
SA15–SA18
00010XXXXX
128 (4x32) Kwords
SA19–SA22
00011XXXXX
128 (4x32) Kwords
SA23–SA26
00100XXXXX
128 (4x32) Kwords
SA27-SA30
00101XXXXX
128 (4x32) Kwords
SA31-SA34
00110XXXXX
128 (4x32) Kwords
SA35-SA38
00111XXXXX
128 (4x32) Kwords
SA39-SA42
01000XXXXX
128 (4x32) Kwords
SA43-SA46
01001XXXXX
128 (4x32) Kwords
SA47-SA50
01010XXXXX
128 (4x32) Kwords
SA51-SA54
01011XXXXX
128 (4x32) Kwords
SA55–SA58
01100XXXXX
128 (4x32) Kwords
SA59–SA62
01101XXXXX
128 (4x32) Kwords
SA63–SA66
01110XXXXX
128 (4x32) Kwords
Sector
SA67–SA70
01111XXXXX
128 (4x32) Kwords
SA71–SA74
10000XXXXX
128 (4x32) Kwords
SA75–SA78
10001XXXXX
128 (4x32) Kwords
SA79–SA82
10010XXXXX
128 (4x32) Kwords
SA83–SA86
10011XXXXX
128 (4x32) Kwords
SA87–SA90
10100XXXXX
128 (4x32) Kwords
SA91–SA94
10101XXXXX
128 (4x32) Kwords
SA95–SA98
10110XXXXX
128 (4x32) Kwords
SA99–SA102
10111XXXXX
128 (4x32) Kwords
SA103–SA106
11000XXXXX
128 (4x32) Kwords
SA107–SA110
11001XXXXX
128 (4x32) Kwords
SA111–SA114
11010XXXXX
128 (4x32) Kwords
SA115–SA118
11011XXXXX
128 (4x32) Kwords
SA119–SA122
11100XXXXX
128 (4x32) Kwords
SA123–SA126
11101XXXXX
128 (4x32) Kwords
SA127–SA130
11110XXXXX
128 (4x32) Kwords
SA131–SA133
1111100XXX,
1111101XXX,
1111110XXX
96 (3x32) Kwords
SA134
1111111000
4 Kwords
SA135
1111111001
4 Kwords
SA136
1111111010
4 Kwords
SA137
1111111011
4 Kwords
SA138
1111111100
4 Kwords
SA139
1111111101
4 Kwords
SA140
1111111101
4 Kwords
SA141
1111111111
4 Kwords
Am49PDL640AG
15
P R E L I M I N A R Y
SECTOR PROTECTION
The Am29PDL640G features several levels of sector
protection, which can disable both the program and
erase operations in certain sectors or sector groups:
■ Persistently Locked—The sector is protected and
cannot be changed.
Persistent Sector Protection
■ Dynamically Locked—The sector is protected and
can be changed by a simple command.
A command sector protection method that replaces
the old 12 V controlled protection method.
■ Unlocked—The sector is unprotected and can be
changed by a simple command.
Password Sector Protection
To achieve these states, three types of “bits” are used:
A highly sophisticated protection method that requires
a password before changes to certain sectors or sector groups are permitted
Persistent Protection Bit (PPB)
WP# Hardware Protection
A write protect pin that can prevent program or erase
operations in sectors 0, 1, 140, and 141.
All parts default to operate in the Persistent Sector
Protection mode. The customer must then choose if
the Persistent or Password Protection method is most
desirable. There are two one-time programmable
non-volatile bits that define which sector protection
method will be used. If the Persistent Sector Protection method is desired, programming the Persistent
Sector Protection Mode Locking Bit permanently
sets the device to the Persistent Sector Protection
mode. If the Password Sector Protection method is
desired, programming the Password Mode Locking
Bit permanently sets the device to the Password Sector Protection mode. It is not possible to switch between the two protection modes once a locking bit has
been set. One of the two modes must be selected
when the device is first programmed. This prevents
a program or virus from later setting the Password
Mode Locking Bit, which would cause an unexpected
shift from the default Persistent Sector Protection
Mode into the Password Protection Mode.
A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (see the sector address tables for specific sector protection groupings).
All 4 Kword boot-block sectors have individual sector
Persistent Protection Bits (PPBs) for greater flexibility.
Each PPB is individually modifiable through the PPB
Write Command.
The device erases all PPBs in parallel. If any PPB requires erasure, the device must be instructed to preprogram all of the sector PPBs prior to PPB erasure.
Otherwise, a previously erased sector PPBs can potentially be over-erased. The flash device does not
have a built-in means of preventing sector PPBs
over-erasure.
Persistent Protection Bit Lock (PPB Lock)
The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to “1”, the PPBs cannot be
changed. When cleared (“0”), the PPBs are changeable. There is only one PPB Lock bit per device. The
PPB Lock is cleared after power-up or hardware reset.
There is no command sequence to unlock the PPB
Lock.
Dynamic Protection Bit (DYB)
The WP# Hardware Protection feature is always available, independent of the software managed protection
method chosen.
A volatile protection bit is assigned for each sector.
After power-up or hardware reset, the contents of all
DYBs is “0”. Each DYB is individually modifiable
through the DYB Write Command.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at the factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
When the parts are first shipped, the PPBs are
cleared, the DYBs are cleared, and PPB Lock is defaulted to power up in the cleared state – meaning the
PPBs are changeable.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode for details.
Persistent Sector Protection
The Persistent Sector Protection method replaces the
12 V controlled protection method in previous AMD
flash devices. This new method provides three different sector protection states:
16
When the device is first powered on the DYBs power
up cleared (sectors not protected). The Protection
State for each sector is determined by the logical OR
of the PPB and the DYB related to that sector. For the
sectors that have the PPBs cleared, the DYBs control
whether or not the sector is protected or unprotected.
By issuing the DYB Write command sequences, the
DYBs will be set or cleared, thus placing each sector
in the protected or unprotected state. These are the
so-called Dynamic Locked or Unlocked states. They
are called dynamic states because it is very easy to
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
switch back and forth between the protected and unprotected conditions. This allows software to easily
protect sectors against inadvertent changes yet does
not prevent the easy removal of protection when
changes are needed. The DYBs maybe set or cleared
as often as needed.
The PPBs allow for a more static, and difficult to
change, level of protection. The PPBs retain their state
across power cycles because they are non-volatile. Individual PPBs are set with a command but must all be
cleared as a group through a complex sequence of
program and erasing commands. The PPBs are also
limited to 100 erase cycles.
The PPB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired
settings, the PPB Lock may be set to “1”. Setting the
PPB Lock disables all program and erase commands
to the non-volatile PPBs. In effect, the PPB Lock Bit
locks the PPBs into their current state. The only way to
clear the PPB Lock is to go through a power cycle.
System boot code can determine if any changes to the
PPB are needed; for example, to allow new system
code to be downloaded. If no changes are needed
then the boot code can set the PPB Lock to disable
any further changes to the PPBs during system operation.
The WP#/ACC write protect pin adds a final level of
hardware protection to sectors 0, 1, 140, and 141.
When this pin is low it is not possible to change the
contents of these sectors. These sectors generally
hold system boot code. The WP#/ACC pin can prevent any changes to the boot code that could override
the choices made while setting up sector protection
during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic
state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a
simple DYB Write command sequence is all that is
necessary. The DYB write command for the dynamic
sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change
the status of the persistently locked sectors, a few
more steps are required. First, the PPB Lock bit must
be disabled by either putting the device through a
power-cycle, or hardware reset. The PPBs can then
be changed to reflect the desired settings. Setting the
PPB lock bit once again will lock the PPBs, and the
device operates normally again.
The best protection is achieved by executing the PPB
lock bit set command early in the boot code, and protect the boot code by holding WP#/ACC = VIL.
August 5, 2003
Table 8.
Sector Protection Schemes
DYB
PPB
PPB
Lock
0
0
0
Unprotected—PPB and DYB are
changeable
0
0
1
Unprotected—PPB not
changeable, DYB is changeable
0
1
0
1
0
0
1
1
0
0
1
1
1
0
1
1
1
1
Sector State
Protected—PPB and DYB are
changeable
Protected—PPB not
changeable, DYB is changeable
Table 9 contains all possible combinations of the DYB,
PPB, and PPB lock relating to the status of the sector.
In summary, if the PPB is set, and the PPB lock is set,
the sector is protected and the protection can not be
removed until the next power cycle clears the PPB
lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls
whether or not the sector is protected or unprotected.
If the user attempts to program or erase a protected
sector, the device ignores the command and returns to
read mode. A program command to a protected sector
enables status polling for approximately 1 µs before
the device returns to read mode without having modified the contents of the protected sector. An erase
command to a protected sector enables status polling
for approximately 50 µs after which the device returns
to read mode without having erased the protected sector.
The programming of the DYB, PPB, and PPB lock for
a given sector can be verified by writing a
DYB/PPB/PPB lock verify command to the device.
Persistent Sector Protection Mode Locking Bit
Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that
the device remain in software sector protection. Once
set, the Persistent Sector Protection locking bit prevents programming of the password protection mode
locking bit. This guarantees that a hacker could not
place the device in password protection mode.
Password Protection Mode
The Password Sector Protection Mode method allows
an even higher level of security than the Persistent
Sector Protection Mode. There are two main differences between the Persistent Sector Protection and
the Password Sector Protection Mode:
Am49PDL640AG
17
P R E L I M I N A R Y
■ When the device is first powered on, or comes out
of a reset cycle, the PPB Lock bit set to the locked
state, rather than cleared to the unlocked state.
■ The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device.
The Password Sector Protection method is otherwise
identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in
this method.
The password is stored in a one-time programmable
(OTP) region of the flash memory. Once the Password
Mode Locking Bit is set, the password is permanently
set with no means to read, program, or erase it. The
password is used to clear the PPB Lock bit. The Password Unlock command must be written to the flash,
along with a password. The flash device internally
compares the given password with the pre-programmed password. If they match, the PPB Lock bit is
cleared, and the PPBs can be altered. If they do not
match, the flash device does nothing. There is a
built-in 2 µs delay for each “password check.” This
delay is intended to thwart any efforts to run a program
that tries all possible combinations in order to crack
the password.
Password and Password Mode Locking Bit
In order to select the Password sector protection
scheme, the customer must first program the password. The password may be correlated to the unique
Electronic Serial Number (ESN) of the particular flash
device. Each ESN is different for every flash device;
therefore each password should be different for every
flash device. While programming in the password region, the customer may perform Password Verify operations.
Once the desired password is programmed in, the
customer must then set the Password Mode Locking
Bit. This operation achieves two objectives:
1. Permanently sets the device to operate using the
Password Protection Mode. It is not possible to reverse this function.
2. Disables all further commands to the password region. All program, and read operations are ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors.
The user must be sure that the Password Protection
method is desired when setting the Password Mode
Locking Bit. More importantly, the user must be sure
that the password is correct when the Password Mode
Locking Bit is set. Due to the fact that read operations
are disabled, there is no means to verify what the
password is afterwards. If the password is lost after
setting the Password Mode Locking Bit, there will be
no way to clear the PPB Lock bit.
18
The Password Mode Locking Bit, once set, prevents
reading the 64-bit password on the DQ bus and further
password programming. The Password Mode Locking
Bit is not erasable. Once Password Mode Locking Bit
is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing
that no changes to the protection scheme are allowed.
64-bit Password
The 64-bit Password is located in its own memory
space and is accessible through the use of the Password Program and Verify commands (see “Password
Verify Command”). The password function works in
conjunction with the Password Mode Locking Bit,
which when set, prevents the Password Verify command from reading the contents of the password on
the pins of the device.
Write Protect (WP#)
The Write Protect feature provides a hardware method
of protecting sectors 0, 1, 140, and 141 without using
VID. This function is provided by the WP# pin and overrides the previously discussed High Voltage Sector
Protection method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
outermost 4 Kword sectors on both ends of the flash
array independent of whether it was previously protected or unprotected.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 140, and 141
were last set to be protected or unprotected. That is,
sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in High Voltage
Sector Protection.
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Persistent Protection Bit Lock
The Persistent Protection Bit (PPB) Lock is a volatile
bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode
Lock Bit is also set after a hardware reset (RESET#
asserted) or a power-up reset, the ONLY means for
clearing the PPB Lock Bit in Password Protection
Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command
clears the PPB Lock Bit, allowing for sector PPBs
modifications. Asserting RESET#, taking the device
through a power-on reset, or issuing the PPB Lock Bit
Set command sets the PPB Lock Bit to a “1” when the
Password Mode Lock Bit is not set.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
If the Password Mode Locking Bit is not set, including
Persistent Protection Mode, the PPB Lock Bit is
cleared after power-up or hardware reset. The PPB
Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB
Lock Bit is by issuing a hardware or power-up reset.
The Password Unlock command is ignored in Persistent Protection Mode.
August 5, 2003
High Voltage Sector Protection
Sector protection and unprotection may also be implemented using programming equipment. The procedure requires high voltage (VID) to be placed on the
RESET# pin. Refer to Figure Note: for details on this
procedure. Note that for sector unprotect, all unprotected sectors must first be protected prior to the first
sector write cycle.
Am49PDL640AG
19
P R E L I M I N A R Y
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 4 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 4 µs
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6-A0 =
0111010
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6-A0 =
1111010
Wait 100 µs
Increment
PLSCNT
No
Verify Sector
Protect: Write 40h
to sector address
with A6-A0 =
0000010
Reset
PLSCNT = 1
Read from
sector address
with A6-A0 =
0000010
Wait 1.2 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6-A0 =
0000010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
Remove VID
from RESET#
No
Yes
Protect another
sector?
PLSCNT
= 1000?
No
Write reset
command
Remove VID
from RESET#
Sector Protect
complete
Write reset
command
Device failed
Read from
sector address
with A6-A0 =
0000010
Data = 01h?
Sector Protect
complete
Sector Protect
Algorithm
Yes
Remove VID
from RESET#
Write reset
command
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Remove VID
from RESET#
Sector Unprotect
complete
Write reset
command
Device failed
Sector Unprotect
complete
Sector Unprotect
Algorithm
Note:These algorithms are valid only in Persistent Sector Protection Mode. They are not valid in Password Protection Mode.
Figure 1. In-System Sector Protection/
Sector Unprotection Algorithms
20
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 23 shows the timing diagrams, for this feature.
AMD offers the device with the SecSi Sector either
fa ctor y loc k ed o r c us tom er l oc k able . Th e factory-locked version is always protected when shipped
from the factory, and has the SecSi (Secured Silicon)
Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize the
sector in any manner they choose. The customer-lockable version has the SecSi (Secured Silicon) Sector
Indicator Bit permanently set to a “0.” Thus, the SecSi
Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked.
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi™ Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the boot sectors. This
mode of operation continues until the system issues
the Exit SecSi Sector command sequence, or until
power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the normal address space. Note that
the ACC function and unlock bypass modes are not
available when the SecSi Sector is enabled.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
sectors 0, 1, 140, 141 will remain protected).
2. All previously protected sectors are protected once
again.
In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory.
The SecSi Sector cannot be modified in any way. The
device is preprogrammed with both a random number
and a secure ESN. The SecSi Sector is located at addresses 000000h–00007Fh in Persistent Protection
mode, and at addresses 000005h–00007Fh in Password Protection mode. The device is available preprogrammed with one of the following:
■ A random, secure ESN only
Figure 2.
Temporary Sector Unprotect Operation
■ Customer code through the ExpressFlash service
■ Both a random, secure ESN and customer code
through the ExpressFlash service.
SecSi™ (Secured Silicon) Sector
SectorFlash Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is up to 128 words in length,
and uses a SecSi Sector Indicator Bit (DQ7) to indicate whether or not the SecSi Sector is locked when
shipped from the factory. This bit is permanently set at
the factory and cannot be changed, which prevents
cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field.
August 5, 2003
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s
factory with the SecSi Sector permanently locked.
Contact an AMD representative for details on using
AMD’s ExpressFlash service.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
If the security feature is not required, the SecSi SectorSecure Sector can be treated as an additional Flash
memory space. The SecSi Sector can be read any
Am49PDL640AG
21
P R E L I M I N A R Y
number of times, but can be programmed and locked
only once. Note that the accelerated programming
(ACC) and unlock bypass functions are not available
when programming the SecSi Sector.
The SecSi Sector area can be protected using one of
the following procedures:
SecSi Sector Protection Bit
The SecSi Sector Protection Bit prevents programming of the SecSi Sector memory area. Once set, the
SecSi Sector memory area contents are non-modifiable.
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure Note:,
except that RESET# may be at either VIH or VID.
This allows in-system protection of the SecSi Sector
Region without raising any device pin to a high voltage. Note that this method is only applicable to the
SecSi Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
START
RESET# =
VIH or VID
Wait 1 µs
Write 60h to
any address
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
22
Am49PDL640AG
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove VIH or VID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
SecSi Sector Protect Verify
August 5, 2003
P R E L I M I N A R Y
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes. In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than V LKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
August 5, 2003
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 10–13. To terminate reading CFI data,
the system must write the reset command. The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 10–13. The
system must write the reset command to return the device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies
of these documents.
Am49PDL640AG
23
P R E L I M I N A R Y
Table 9.
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10.
24
System Interface String
Addresses
Data
Description
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0031h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
Table 11.
Device Geometry Definition
Addresses
Data
27h
0017h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
August 5, 2003
Description
Am49PDL640AG
25
P R E L I M I N A R Y
Table 12.
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
45h
0004h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0007h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode
4Ah
0077h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors excluding Bank 1
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0002h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
0085h
4Eh
0095h
4Fh
0001h
50h
0001h
57h
0004h
58h
0017h
59h
0030h
5Ah
0030h
5Bh
0017h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
26
00h = Uniform device, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Both
Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 14 defines the valid register command
sequences. Writing incorrect address and data values
or writing them in the improper sequence may place
the device in an unknown state. A reset command is
then required to return the device to reading array
data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the eras e-sus pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
Note that the ACC function and unlock bypass modes
are not available when the SecSi Sector is enabled.
See also Requirements for Reading Array Data in the
section for more information. The Read-Only Operations table provides the read parameters, and Figure
14 shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
August 5, 2003
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
co m m an d re tur n s th at b a nk t o t he e ra se- suspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Table 14 shows the address and data requirements.
To determine sector protection information, the system
must write to the appropriate bank address (BA) and
sector address (SA). Table 4 shows the address range
and bank number associated with each sector.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Am49PDL640AG
27
P R E L I M I N A R Y
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, eight word electronic serial number (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the device to normal operation. The SecSi Sector is not accessible when the device is executing an Embedded
Program or embedded Erase algorithm. Table 14
shows the address and data requirements for both
command sequences. See also “SecSi™ (Secured Silicon) Sector SectorFlash Memory Region” for further information. Note that the ACC function and unlock
bypass modes are not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 14 shows the address
and data requirements for the program command sequence.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity. Note that the SecSi
Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
28
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program data to a bank faster than using the standard
program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 14 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the read mode.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
Data Poll
from System
Sector Erase Command Sequence
Verify Data?
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command.Table 14 shows the address and data requirements for the sector erase command sequence.
No
Yes
Increment Address
No
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Last Address?
Yes
Programming
Completed
Note: See Table 14 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 14
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Write Operation Status section for information on these status bits. Note that the
SecSi Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress.
August 5, 2003
After the command sequence is written, a sector erase
time-out of 80 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 80
µs, otherwise erasure may begin. Any sector erase
address and command following the exceeded
time-out may or may not be accepted. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
S e ct o r E ra se o r E ra s e S u s p en d d u r i n g th e
time-out period resets that bank to the read mode.
The system must rewrite the command sequence and
any additional addresses and commands. Note that
the SecSi Sector, autoselect, and CFI functions are
unavailable when an erase operation is in progress.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
Am49PDL640AG
29
P R E L I M I N A R Y
data from the non-erasing bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank.
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
Refer to the Autoselect Mode and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-suspended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
Erase Suspend/Erase Resume
Commands
START
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
Password Program Command
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Word Program operation.
Refer to the Write Operation Status section for more
information.
The Password Program Command permits programming the password that is used as part of the hardware protection scheme. The actual password is
64-bits long. Four Password Program commands are
required to program the password. The system must
enter the unlock cycle, password program command
(38h) and the program address/data for each portion
30
Notes:
1. See Table 14 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 5.
Am49PDL640AG
Erase Operation
August 5, 2003
P R E L I M I N A R Y
of the password when programming. There are no
provisions for entering the 2-cycle unlock cycle, the
password program command, and all the password
data. There is no special addressing order required for
programming the password. Also, when the password
is undergoing programming, Simultaneous Operation
is disabled. Read operations to any memory location
will return the programming status. Once programming is complete, the user must issue a Read/Reset
command to return the device to normal operation.
Once the Password is written and verified, the Password Mode Locking Bit must be set in order to prevent
verification. The Password Program Command is only
capable of programming “0”s. Programming a “1” after
a cell is programmed as a “0” results in a time-out by
the Embedded Program Algorithm™ with the cell remaining as a “0”. The password is all ones when
shipped from the factory. All 64-bit password combinations are valid as a password.
Persistent Sector Protection Mode
Locking Bit Program Command
Password Verify Command
The SecSi Sector Protection Bit Program Command
programs the SecSi Sector Protection Bit, which prevents the SecSi sector memory from being cleared. If
the SecSi Sector Protection Bit is verified as programmed without margin, the SecSi Sector Protection
Bit Program Command should be reissued to improve
program margin. Exiting the VCC-level SecSi Sector
Protection Bit Program Command is accomplished by
writing the Read/Reset command.
The Password Verify Command is used to verify the
Password. The Password is verifiable only when the
Password Mode Locking Bit is not programmed. If the
Password Mode Locking Bit is programmed and the
user attempts to verify the Password, the device will
always drive all F’s onto the DQ data bus.
The Password Verify command is permitted if the
SecSi sector is enabled. Also, the device will not operate in Simultaneous Operation when the Password
Verify command is executed. Only the password is returned regardless of the bank address. The lower two
address bits (A1-A0) are valid during the Password
Verify. Writing the Read/Reset command returns the
device back to normal operation.
Password Protection Mode Locking Bit
Program Command
The Password Protection Mode Locking Bit Program
Command programs the Password Protection Mode
Locking Bit, which prevents further verifies or updates
to the Password. Once programmed, the Password
Protection Mode Locking Bit cannot be erased! If the
Password Protection Mode Locking Bit is verified as
program without margin, the Password Protection
Mode Locking Bit Program command can be executed
to improve the program margin. Once the Password
Protection Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit program circuitry
is disabled, thereby forcing the device to remain in the
Password Protection mode. Exiting the Mode Locking
Bit Program command is accomplished by writing the
Read/Reset command.
August 5, 2003
The Persistent Sector Protection Mode Locking Bit
Program Command programs the Persistent Sector
Protection Mode Locking Bit, which prevents the Password Mode Locking Bit from ever being programmed.
If the Persistent Sector Protection Mode Locking Bit is
verified as programmed without margin, the Persistent
Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin.
By disabling the program circuitry of the Password
Mode Locking Bit, the device is forced to remain in the
Persistent Sector Protection mode of operation, once
this bit is set. Exiting the Persistent Protection Mode
Locking Bit Program command is accomplished by
writing the Read/Reset command.
SecSi Sector Protection Bit Program
Command
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the
PPB Lock bit if it is cleared either at reset or if the
Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command.
Once the PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear or
the Password Unlock command is executed. Upon
setting the PPB Lock Bit, the PPBs are latched into the
DYBs. If the Password Mode Locking Bit is set, the
PPB Lock Bit status is reflected as set, even after a
power-on reset cycle. Exiting the PPB Lock Bit Set
command is accomplished by writing the Read/Reset
command (only in the Persistent Protection Mode).
DYB Write Command
The DYB Write command is used to set or clear a DYB
for a given sector. The high order address bits
(A21–A12) are issued at the same time as the code
01h or 00h on DQ7-DQ0. All other DQ data bus pins
are ignored during the data write cycle. The DYBs are
modifiable at any time, regardless of the state of the
PPB or PPB Lock Bit. The DYBs are cleared at
power-up or hardware reset.Exiting the DYB Write
command is accomplished by writing the Read/Reset
command.
Am49PDL640AG
31
P R E L I M I N A R Y
Password Unlock Command
The Password Unlock command is used to clear the
PPB Lock Bit so that the PPBs can be unlocked for
modification, thereby allowing the PPBs to become accessible for modification. The exact password must be
entered in order for the unlocking function to occur.
This command cannot be issued any faster than 2 µs
at a time to prevent a hacker from running through all
64-bit combinations in an attempt to correctly match a
password. If the command is issued before the 2 µ s
execution window for each portion of the unlock, the
command will be ignored.
Once the Password Unlock command is entered, the
RY/BY# indicates that the device is busy. Approximately 2 µs is required for each portion of the unlock.
Once the first portion of the password unlock completes (RY/BY# is not low or DQ6 does not toggle
when read), the Password Unlock command and next
part of the password are written. The system must
thus monitor RY/BY# or the status bits to confirm
when to write the next portion of the password.
Note that immediately following successful unlock,
write the SecSi Sector exit command before attempting to verify, program, or erase the PPBs.
PPB Program Command
The PPB Program command is used to program, or
set, a given PPB. Each PPB is individually programmed (but is bulk erased with the other PPBs).
The specific sector address (A21–A12) are written at
the same time as the program command 60h with A6
= 0. If the PPB Lock Bit is set and the corresponding
PPB is set for the sector, the PPB Program command
will not execute and the command will time-out without
programming the PPB.
After programming a PPB, two additional cycles are
needed to determine whether the PPB has been programmed with margin. If the PPB has been programmed without margin, the program command
should be reissued to improve the program margin.
Also note that the total number of PPB program/erase
cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed.
The PPB Program command does not follow the Embedded Program algorithm.
All PPB Erase Command
The All PPB Erase command is used to erase all
PPBs in bulk. There is no means for individually erasing a specific PPB. Unlike the PPB program, no specific sector address is required. However, when the
PPB erase command is written all Sector PPBs are
erased in parallel. If the PPB Lock Bit is set the ALL
PPB Erase command will not execute and the command will time-out without erasing the PPBs. After
32
erasing the PPBs, two additional cycles are needed to
determine whether the PPB has been erased with
margin. If the PPBs has been erased without margin,
the erase command should be reissued to improve the
program margin.
It is the responsibility of the user to preprogram all
PPBs prior to issuing the All PPB Erase command. If
the user attempts to erase a cleared PPB, over-erasure may occur making it difficult to program the PPB
at a later time. Also note that the total number of PPB
program/erase cycles is limited to 100 cycles. Cycling
the PPBs beyond 100 cycles is not guaranteed.
DYB Write Command
The DYB Write command is used for setting the DYB,
which is a volatile bit that is cleared at reset. There is
one DYB per sector. If the PPB is set, the sector is
protected regardless of the value of the DYB. If the
PPB is cleared, setting the DYB to a 1 protects the
sector from programs or erases. Since this is a volatile
bit, removing power or resetting the device will clear
the DYBs. The bank address is latched when the command is written.
PPB Lock Bit Set Command
The PPB Lock Bit set command is used for setting the
DYB, which is a volatile bit that is cleared at reset.
There is one DYB per sector. If the PPB is set, the
sector is protected regardless of the value of the DYB.
If the PPB is cleared, setting the DYB to a 1 protects
the sector from programs or erases. Since this is a volatile bit, removing power or resetting the device will
clear the DYBs. The bank address is latched when the
command is written.
PPB Status Command
The programming of the PPB for a given sector can be
verified by writing a PPB status verify command to the
device.
PPB Lock Bit Status Command
The programming of the PPB Lock Bit for a given sector can be verified by writing a PPB Lock Bit status
verify command to the device.
Note that immediately following the PPB Lock Status
Command write the SecSi Sector Exit command before attempting to verify, program, or erase the PPBs.
Sector Protection Status Command
The programming of either the PPB or DYB for a given
sector or sector group can be verified by writing a Sector Protection Status command to the device.
Note that there is no single command to independently
verify the programming of a DYB for a given sector
group.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
Command Definitions Tables
Command (Notes)
Cycles
Table 13.
Memory Array Command Definitions
Bus Cycles (Notes 1–4)
Addr Data Addr Data
Addr
Data
Addr
Data
Read (5)
1
RA
Reset (6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
(BA) 555
90
(BA)X00
01
Device ID (10)
6
555
AA
2AA
55
(BA) 555
90
(BA)X01
7E
Autoselect
(Note 7)
Addr
Data
Addr
Data
(BA)X0E
15
(BA)X0F
01
RD
SecSi Sector Factory
Protect (8)
4
555
AA
2AA
55
(BA) 555
90
X03
(see
note 8)
Sector Group Protect
Verify (9)
4
555
AA
2AA
55
(BA) 555
90
(SA)X02
XX00/
XX01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
PD
555
20
Program/Erase Suspend (11)
1
BA
B0
Program/Erase Resume (12)
1
BA
30
CFI Query (13)
1
55
98
Accelerated Program (14)
2
XX
A0
PA
Unlock Bypass Entry (15)
3
555
AA
2AA
55
Unlock Bypass Program (15)
2
XX
A0
PA
PD
Unlock Bypass Erase (15)
2
XX
80
XX
10
Unlock Bypass CFI (13, 15)
1
XX
98
Unlock Bypass Reset (15)
2
XX
90
XX
00
Legend:
BA = Address of bank switching to autoselect mode, bypass mode, or
erase operation. Determined by A21:A19, see Tables 4 and 5 for
more detail.
PA = Program Address (A21:A0). Addresses latch on falling edge of
WE# or CE# pulse, whichever happens later.
PD = Program Data (DQ15:DQ0) written to location PA. Data latches
on rising edge of WE# or CE# pulse, whichever happens first.
RA = Read Address (A21:A0).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (A21:A12) for verifying (in autoselect mode) or
erasing.
WD = Write Data. See “Configuration Register” definition for specific
write data. Data latched on rising edge of WE#.
X = Don’t care
Notes:
1. See Table 1 for description of bus operations.
8.
The data is 80h for factory locked and 00h for not factory locked.
2.
All values are in hexadecimal.
9.
3.
Shaded cells in table denote read cycles. All other cycles are
write operations.
The data is 00h for an unprotected sector group and 01h for a
protected sector group.
10. Device ID must be read across cycles 4, 5, and 6.
4.
During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
11. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Program/Erase Suspend mode.
Program/Erase Suspend command is valid only during a sector
erase operation, and requires bank address.
5.
No unlock or command cycles required when bank is reading
array data.
12. Program/Erase Resume command is valid only during Erase
Suspend mode, and requires bank address.
6.
The Reset command is required to return to reading array (or to
erase-suspend-read mode if previously in Erase Suspend) when
bank is in autoselect mode, or if DQ5 goes high (while bank is
providing status information).
13. Command is valid when device is ready to read array data or
when device is in autoselect mode.
7.
Fourth cycle of autoselect command sequence is a read cycle.
System must provide bank address to obtain manufacturer ID or
device ID information. See Autoselect Command Sequence
section for more information.
August 5, 2003
14. WP#/ACC must be at VID during the entire operation of command.
15. Unlock Bypass Entry command is required prior to any Unlock
Bypass operation. Unlock Bypass Reset command is required to
return to the reading array.
Am49PDL640AG
33
P R E L I M I N A R Y
Table 14.
Sector Protection Command Definitions
Cycles
Bus Cycles (Notes 1-4)
Command (Notes)
Addr Data Addr Data Addr Data
Reset
1
XXX
F0
SecSi Sector Entry
3
555
AA
2AA
55
555
SecSi Sector Exit
4
555
AA
2AA
55
555
90
XX
00
SecSi Protection Bit Program (5, 6)
6
555
AA
2AA
55
555
60
OW
68
SecSi Protection Bit Status
4
555
AA
2AA
55
555
60
OW
RD(0)
XX[0-3]
PD[0-3]
Addr
Data
Addr
Data
Addr
Data
OW
48
OW
RD(0)
88
Password Program (5, 7, 8)
4
555
AA
2AA
55
555
38
Password Verify (8, 9)
4
555
AA
2AA
55
555
C8
PWA[0-3] PWD[0-3]
Password Unlock (7, 10, 11, 17)
4
555
AA
2AA
55
555
28
PWA[0-3] PWD[0-3]
PPB Program (5, 6, 12)
6
555
AA
2AA
55
555
60
(SA)WP
68
(SA)WP
48
(SA)WP RD(0)
All PPB Erase (5, 13, 14)
6
555
AA
2AA
55
555
60
EP
60
(SA)EP
40
(SA)WP RD(0)
PPB Lock Bit Set
3
555
AA
2AA
55
555
78
PL
48
PL
RD(0)
SL
48
SL
RD(0)
PPB Lock Bit Status (15, 18)
4
555
AA
2AA
55
555
58
SA
RD(1)
DYB Write (7)
4
555
AA
2AA
55
555
48
SA
X1
DYB Erase (7)
4
555
AA
2AA
55
555
48
SA
X0
DYB Status
4
555
AA
2AA
55
555
58
SA
RD(0)
PPMLB Program (5, 6, 12)
6
555
AA
2AA
55
555
60
PL
68
PPMLB Status (5)
4
555
AA
2AA
55
555
60
PL
RD(0)
SPMLB Program (5, 6, 12)
6
555
AA
2AA
55
555
60
SL
68
SPMLB Status (5)
4
555
AA
2AA
55
555
60
SL
RD(0)
Legend:
DYB = Dynamic Protection Bit
OW = Address (A6:A0) is (0011010)
PD[3:0] = Password Data (1 of 4 portions)
PPB = Persistent Protection Bit
PWA = Password Address. A1:A0 selects portion of password.
PWD = Password Data being verified.
PL = Password Protection Mode Lock Address (A5:A0) is (001010)
RD(0) = Read Data DQ0 for protection indicator bit.
RD(1) = Read Data DQ1 for PPB Lock status.
SA = Sector Address where security command applies. Address bits
A21:A12 uniquely select any sector.
SL = Persistent Protection Mode Lock Address (A5:A0) is (010010)
WP = PPB Address (A6:A0) is (0111010) (Note 16)
EP = PPB Erase Address (A6:A0) is (1111010) (Note 16)
X = Don’t care
PPMLB = Password Protection Mode Locking Bit
SPMLB = Persistent Protection Mode Locking Bit
1.
See Table 1 for description of bus operations.
11. A 2 µs timeout is required between any two portions of password.
2.
All values are in hexadecimal.
12. A 100 µs timeout is required between cycles 4 and 5.
3.
Shaded cells in table denote read cycles. All other cycles are
write operations.
13. A 1.2 ms timeout is required between cycles 4 and 5.
4.
During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been
fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6, erase command
must be issued and verified again. Before issuing erase
command, all PPBs should be programmed to prevent PPB
overerasure.
5.
The reset command returns device to reading array.
15. DQ1 = 1 if PPB locked, 0 if unlocked.
6.
Cycle 4 programs the addressed locking bit. Cycles 5 and 6
validate bit has been fully programmed when DQ0 = 1. If DQ0 = 0
in cycle 6, program command must be issued and verified again.
16. For all other parts that use the Persistent Protection Bit (excluding
PDL128G), the WP and EP addresses are 00000010.
7.
Data is latched on the rising edge of WE#.
8.
Entire command sequence must be entered for each portion of
password.
9.
Command sequence returns FFh if PPMLB is set.
10. The password is written over four consecutive cycles, at
addresses 0-3.
34
17. Immediately following successful unlock, write the SecSi Sector
Exit command before attempting to verify, program, or erase the
PPBs.
18. Immediately following the PPB Lock Status command write the
SecSi Sector Exit command before attempting to verify, program,
or erase the PPBs.
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
WRITE OPERATION STATUS
The device provides several bits to determine the status of
a program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 16 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method
for determining whether a program or erase operation is
complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ15–DQ0 may be still
invalid. Valid data on DQ15–DQ0 will appear on successive read cycles.
Table 16 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 20
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the
read mode.
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
August 5, 2003
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then
the bank returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 on the following read cycles. Just prior to
the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with
DQ15–DQ0 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am49PDL640AG
Figure 6.
Data# Polling Algorithm
35
P R E L I M I N A R Y
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 16 shows the outputs for Toggle Bit I on DQ6.
Figure 7 shows the toggle bit algorithm. Figure 21 in
the “Flash AC Characteristics” section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See
also the subsection on DQ2: Toggle Bit II.
START
Table 16 shows the outputs for RY/BY#.
Read Byte
(DQ7–DQ0)
Address =VA
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
Yes
No
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
36
No
Am49PDL640AG
Toggle Bit Algorithm
August 5, 2003
P R E L I M I N A R Y
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7).
DQ5: Exceeded Timing Limits
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 16 to compare outputs for DQ2 and DQ6.
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
Figure 7 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 21 shows the toggle bit timing diagram. Figure
22 shows the differences between DQ2 and DQ6 in
graphical form.
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ15–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
August 5, 2003
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 16 shows the status of DQ3 relative to the other
status bits.
Am49PDL640AG
37
P R E L I M I N A R Y
Table 15.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
38
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
PSRAM POWER DOWN
Deep Power Down Exit Sequence
CE1# = VIH = or VIL,
CE2 = VIH
Deep Power
Down Mode
CE2 = VIH
Initial State
(Wait 200 µs)
Active
Figure 8.
Table 16.
August 5, 2003
CE2 = VIH, CE1# = VIH
or UB#, LB# = VIH
C
C E1
UB E2 # =
or # = V VI
/a an IH L ,
nd d ,
LB LB
# #
=V
IL
Power Up Sequence
Power Mode
Standby
Deep Power Down
V IL
CE2 = VIL
Power
Up
2=
CE
Standby
Mode
State Diagram
Standby Mode Characteristics
Memory Cell Data
Valid
Invalid
Am49PDL640AG
Standby Current (µA)
100
10
Wait
Time
(µs)
0
200
39
P R E L I M I N A R Y
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C
20 ns
Ambient Temperature
with Power Applied . . . . . . . . . . . . . . –25°C to +85°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
–2.0 V
WP#/ACC . . . . . . . . . . . . . . . . . .–0.5 V to +10.5 V
20 ns
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 9. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 10.
2. Minimum DC input voltage on pins RESET#, and
WP#/ACC is –0.5 V. During volta ge tran sitions,
WP#/ACC, and RESET# may overshoot VSS to –2.0 V
for periods of up to 20 ns. See Figure 9. Maximum DC
input voltage on pin RESET# is +12.5 V which may
overshoot to +14.0 V for periods up to 20 ns. Maximum
DC input voltage on WP#/ACC is +9.5 V which may
overshoot to +12.0 V for periods up to 20 ns.
Figure 9. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
20 ns
Figure 10. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Light Industrial (L) Devices
Ambient Temperature (TA) . . . . . . . . . –25°C to +85°C
VCCf/VCCs Supply Voltages
VCCf/VCCs for standard voltage range . . 2.7 V to 3.1 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
40
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
RESET# Input Load Current
VCC = VCC max; VID= 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, OE# = VIH
VCC = VCC max
ICC1
VCC Active Read Current (Notes 1, 2)
CE# = VIL, OE# = VIH, VCC
= VCC max
ICC2
VCC Active Write Current (Notes 2, 3)
ICC3
VCC Standby Current (Note 2)
ICC4
Min
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
5 MHz
10
20
10 MHz
25
45
CE# = VIL, OE# = VIH, WE# = VIL
15
30
mA
CE#, RESET#, WP#/ACC = VIO ± 0.3 V
1
5
µA
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
1
5
µA
ICC5
Automatic Sleep Mode (Notes 2, 4)
VIH = VIO ± 0.3 V;
VIL = VSS ± 0.3 V
1
5
µA
ICC6
VCC Active Read-While-Program Current
(Notes 1, 2)
CE# = VIL, OE# = VIH
Word
21
45
mA
ICC7
VCC Active Read-While-Erase Current
(Notes 1, 2)
CE# = VIL, OE# = VIH
Word
21
45
mA
ICC8
VCC Active Program-While-EraseSuspended Current (Notes 2, 5)
CE# = VIL, OE# = VIH
17
35
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2
VCC+0.3
V
VHH
Voltage for ACC Program Acceleration
VCC = 3.0 V ± 10%
8.5
9.5
V
VID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 3.0 V ± 10%
11.5
12.5
V
VOL
Output Low Voltage
VOH
Output High Voltage
VLKO
Low VCC Lock-Out Voltage (Note 5)
IOL = 4.0 mA, VCC = VCCS
IOH = –100 µA, VCCf = VCCS
IOH = –2.0 mA, VCC = VCCS
2.
Maximum ICC specifications are tested with VCC = VCCmax.
3.
ICC active while Embedded Erase or Embedded Program is in
progress.
V
V
2.4
2.3
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at
VIH.
August 5, 2003
0.4
VIO–0.1
mA
V
2.5
V
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5.
Not 100% tested.
Am49PDL640AG
41
P R E L I M I N A R Y
pSRAM DC AND OPERATING CHARACTERISTICS (NOTE 1)
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
ILO
Output Leakage Current
CE#1s = VIH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC1s
Operating Current at Minimum
Cycle Time
Cycle time = Min., 100% duty
IIO = 0 mA, CE#1 ≤ 0.2 V,
CE2 ≥ VDD -0.2 V, VIN ≤ 0.2 V
or VIN ≥ VDD -0.2 V
30
ICC2s
Operating Current at Maximum
Cycle Time
Cycle time = 1 µs, 100% duty
IIO = 0 mA, CE#1 = VIL,
CE2 = VIH, VIN = VIH or VIL
3
VIL
Input Low Voltage
–0.2
(Note 2)
0.6
V
VIH
Input High Voltage
2.2
VCC+0.2
(Note 1)
V
VOL
Output Low Voltage
IOL = 2.1 mA
0.4
V
VOH
Output High Voltage
IOH = –1.0 mA
ISB
Standby Current (TTL)
CE#1s = VIH, CE2 = VIL, Other
inputs = VIH or VIL
0.3
mA
ISB1
Standby Current (CMOS)
CE1# = VDD -0.2 V and
CE2 = VDD -0.2 V,
Other inputs = VSS ~ VCC
100
µA
ISBD
Deep Power Down
CE2 ≤ 0.2 V,
Other Inputs = VSS ~ VCC
10
µA
2.4
V
Notes:
1. Overshoot: VCC + 2.0 V in case of pulse width ≤ 20 ns.
2. Undershoot: -2.0 V in case of pulse width ≤ 20 ns.
3. Not 100% Tested
42
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
TEST CONDITIONS
Table 17.
3.0 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
70, 85
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 11.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 12.
August 5, 2003
Input Waveforms and Measurement Levels
Am49PDL640AG
43
P R E L I M I N A R Y
AC CHARACTERISTICS
pSRAM CE#s Timing
Parameter
Test Setup
JEDEC
Std
Description
—
tCCR
CE#s Recover Time
—
Min
All Speeds
Unit
0
ns
CE#f
tCCR
tCCR
tCCR
tCCR
CE1#s
CE2s
Figure 13. Timing Diagram for Alternating
Between pSRAM to Flash
44
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
JEDEC
Std.
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tPACC
Description
Test Setup
70
85
Unit
Min
70
85
ns
CE#, OE# = VIL
Max
70
85
ns
OE# = VIL
Max
70
85
ns
Page Access Time
Max
25
30
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
30
ns
tEHQZ
tDF
Chip Enable to Output High Z (Notes 1, 3)
Max
25
30
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
25
30
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
4
5
ns
tOEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 18 for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to
the data bus driven to VCC/2 is taken as tDF.
.
tRC
Addresses Stable
Addresses
tACC
CE#f
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Valid Data
Data
RESET#
RY/BY#
0V
Figure 14.
August 5, 2003
Read Operation Timings
Am49PDL640AG
45
P R E L I M I N A R Y
AC CHARACTERISTICS
Same Page
A21-A3
A2-A0
Aa
tACC
Data
Ab
tPACC
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
Figure 15.
46
Page Read Operation Timings
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#f, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#f, OE#
RESET#
tRP
Figure 16.
August 5, 2003
Reset Timings
Am49PDL640AG
47
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWLAX
70
85
Unit
70
85
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
6
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.2
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
Notes:
1. Not 100% tested.
2. See the “Deep Power Down Mode” section for more information.
48
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#f
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCCf
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address..
Figure 17.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Figure 18.
August 5, 2003
tVHH
Accelerated Program Timing Diagram
Am49PDL640AG
49
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SADD
VA
555h for chip erase
tAH
CE#f
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCCf
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 19.
50
Chip/Sector Erase Operation Timings
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#f
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 20.
CE#f Controlled Write Cycles
Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#f
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ6–DQ0
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 21.
August 5, 2003
Data# Polling Timings (During Embedded Algorithms)
Am49PDL640AG
51
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#f
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
Figure 22.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to
toggle DQ2 and DQ6.
Figure 23.
52
DQ2 vs. DQ6
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#f
WE#
tRRB
tRSP
RY/BY#
Figure 24.
August 5, 2003
Temporary Sector Unprotect Timing Diagram
Am49PDL640AG
53
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
VID
VIH
RESET#
SADD,
A6, A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#f
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address.
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram
54
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
70
85
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
85
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Typ
6
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.2
sec
1. Not 100% tested.
2. See the “Deep Power Down Mode” section for more information.
August 5, 2003
Am49PDL640AG
55
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SADD for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#f
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device..
Figure 26.
56
Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Power Up Time
200 µs
~
VCCs
CE2s
CE#1s
Figure 27.
Power Up
VCCS Slew Rate
VCCS
dV/dt ≤ 58 V/ms
0
t
Note:
1. At any time during Power Up, the VCCS slew rate (i.e. rate of change) must not exceed 58 V/ms (alternately, it must exceed
17 µs/V).
Figure 28.
August 5, 2003
VCCS Slew Rate
Am49PDL640AG
57
P R E L I M I N A R Y
Read Cycle
Parameter
Symbol
58
Speed
Description
Unit
70
85
tRC
Read Cycle Time
Min
70
85
ns
tAA
Address Access Time
Max
70
85
ns
tCO1, tCO2
Chip Enable to Output
Max
70
85
ns
tOE
Output Enable Access Time
Max
35
40
ns
tBA
LB#s, UB#s to Access Time
Max
70
85
ns
tLZ12
Chip Enable Low to Low-Z Output
Min
10
ns
tBLZ
UB#, LB# Enable to Low-Z Output
Min
10
ns
tOLZ
Output Enable to Low-Z Output
Min
5
ns
tHZ1
Chip Disable to High-Z Output
Max
25
35
ns
tBHZ
UB#s, LB#s Disable to High-Z Output
Max
25
35
ns
tOHZ
Output Disable to High-Z Output
Max
25
35
ns
tOH
Output Data Hold from Address Change
Min
Am49PDL640AG
10
ns
August 5, 2003
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Read Cycle
Read Cycle 1-Addressed Controlled
tRC
Address
tAA
tOH
Data Out
tOH
Data Valid
Previous Data Valid
Note:
1. CE1# = OE# = VIL, CE2 = WE# = VIH, UB# or/and LB# = VIL
Figure 29.
pSRAM Read Cycle–Address Controlled
tRC
Addr ess
tAA
tCO
tOH
tLZ
CE1#
tBA
tHZ
tOE
tBHZ
tBLZ
UB#, LB#
OE#
tOLZ
Data Out
tOHZ
High-Z
Data Valid
High-Z
Note:
1. CE2 = WE# = VIH
Figure 30.
August 5, 2003
pSRAM Read Cycle–CS1# Controlled
Am49PDL640AG
59
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Write Cycle
Parameter
Symbol
60
Speed
Description
Unit
70
85
tWC
Write Cycle Time
Min
70
85
ns
tCw
Chip Enable to End of Write
Min
60
70
ns
tAS
Address Setup Time
Min
tAW
Address Valid to End of Write
Min
60
70
ns
tBW
UB#s, LB#s to End of Write
Min
60
70
ns
tWP
Write Pulse Time
Min
50
60
ns
tWR
Write Recovery Time
Min
0
Min
0
tWHZ
Write to Output High-Z
tDW
0
ns
ns
ns
Max
20
30
Data to Write Time Overlap
Min
30
30
tDH
Data Hold from Write Time
Min
0
ns
tOW
End Write to Output Low-Z
min
5
ns
Am49PDL640AG
ns
August 5, 2003
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
tWC
Addr ess
tWR
tAW
tCW
CE#1s
tBW
UB#, LB#
WE#
tWP
tAS
Data In
tDW
tDH
High-Z
High-Z
Data Valid
tWHZ
tOW
Data Out
Data Undefined
Note:
1. CE2s = VIH
2. CE2s = WE# = VIH
Figure 31.
pSRAM Write Cycle–WE# Controlled
tWC
Addr ess
tWR
tAW
tAS
tCW
CE#1s
tBW
UB#, LB#
WE#
tWP
tDW
Data In
Data Out
tDH
Data Valid
High-Z
Note:
1. CE2s = VIH
2. CE2s = WE# = VIH
Figure 32.
August 5, 2003
pSRAM Write Cycle–CS1# Controlled
Am49PDL640AG
61
P R E L I M I N A R Y
PSRAM AC CHARACTERISTICS
tWC
Addr ess
tWR
tAW
tCW
CE#1s
UB#, LB#
tBW
tAS
tWP
WE#
tDW
Data In
tDH
Data Valid
High-Z
Data Out
Note:
1. CE2s = VIH
2. CE2s = WE# = VIH
Figure 33.
pSRAM Write Cycle–UB#, LB# Controlled
200 µs
1 µs
~
CE2s
Deep Power
Down Mode
Normal Operation Suspend
Mode
Wake Up
Normal Operation
~
CE#1s
Figure 34.
62
Deep Power Down Mode
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
PSRAM AC CHARACTERISTICS
≥ 15 µs
CE1#
WE #
< tRC
Address
Figure 35.
Abnormal Timing
≥ 15 µs
CE1#
WE#
≥ tRC
Address
Figure 36.
Avoidable Timing 1
≥ 15 µs
CE1#
≥ tRC
WE#
< tRC
Address
Figure 37.
August 5, 2003
Avoidable Timing 2
Am49PDL640AG
63
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Chip Erase Time
56
Excludes 00h programming
prior to erasure (Note 4)
Word Program Time
7
210
µs
Accelerated Word Program Time
4
120
µs
Chip Program Time (Note 3)
28
84
sec
sec
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
Table 14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including RESET#)
–1.0 V
13 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Input Capacitance
Test Setup
Typ
Max
Unit
VIN = 0
11
14
pF
VOUT = 0
12
16
pF
COUT
Output Capacitance
CIN2
Control Pin Capacitance
VIN = 0
14
16
pF
CIN3
WP#/ACC Pin Capacitance
VIN = 0
17
20
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
64
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
PHYSICAL DIMENSIONS
FLK073—73-Ball Fine-Pitch Grid Array 13 x 9 mm
A
D
D1
eD
0.15 C
(2X)
10
9
8
SE
7
7
6
E
E1
5
4
eE
3
2
1
INDEX MARK
PIN A1
CORNER
M
10
TOP VIEW
L
K
J
H
G
F
E
D
C B
A
7
B
SD
0.15 C
PIN A1
CORNER
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
SIDE VIEW
6
0.08 C
b
73X
0.15
0.08
M C A B
M C
NOTES:
PACKAGE
FLK 073
JEDEC
13.00 mm x 9.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.40
A1
0.25
---
---
A2
0.98
---
1.08
NOTE
PROFILE
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
E
9.00 BSC.
BODY SIZE
D1
8.80 BSC.
MATRIX FOOTPRINT
E1
7.20 BSC.
MATRIX FOOTPRINT
MD
12
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
72
0.35
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.40
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
eE
0.80 BSC.
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
A2,A3,A4,A5,A6,A7,A8,A9,
B2,B3,B4,B7,B8,B9
C2,C9,C10,D1,D10,E1,E10,
F5,F6,G5,G6,H1,H10
J1,J10,K1,K2,K9,K10,
L2,L3,L4,L7,L8,L9
M2,M3,M4,M5,M6,M7,M8,M9
August 5, 2003
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
BODY SIZE
0.30
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
BODY THICKNESS
13.00 BSC.
n
4.
BALL HEIGHT
D
φb
1.
N/A
DEPOPULATED SOLDER BALLS
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3278 \ 16-038.14c
Am49PDL640AG
65
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (February 21, 2003)
Initial Release
Revision A+1 (March 14, 2003)
Ordering Information
Corrected typo in temperature range.
Revision A+2 (April 4, 2003)
Ordering Information
Corrected typo in temperature range.
Corrected OPNs
Revision A+3 (April 7, 2003)
Ordering Information
Corrected typo in temperature range.
Revision A+4 (August 5, 2003)
Figure 28. VCCS Slew Rate
Added Figure.
Trademarks
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
66
Am49PDL640AG
August 5, 2003
Representatives in U.S. and Canada
Sales Offices and Representatives
North America
ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 5 6 ) 8 3 0 - 9 1 9 2
ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 2 ) 24 2 - 4 4 0 0
CALIFORNIA,
Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 4 5 0 - 7 5 0 0
Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 7 3 2 - 24 0 0
COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 74 1 - 2 9 0 0
CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 0 3 ) 2 6 4 - 7 8 0 0
FLORIDA,
Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 2 7 ) 7 9 3 - 0 0 5 5
Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3
GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 7 0 ) 8 1 4 - 0 2 2 4
ILLINOIS,
Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 3 0 ) 7 7 3 - 4 4 2 2
MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 1 3 - 6 4 0 0
MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 4 8 ) 4 7 1 - 6 2 9 4
MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 1 2 ) 74 5 - 0 0 0 5
NEW JERSEY,
Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 3 ) 7 0 1 - 1 7 7 7
NEW YORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 4 2 5 - 8 0 5 0
NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 0 - 8 0 8 0
OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 24 5 - 0 0 8 0
PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7
SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 5 ) 69 2 - 5 7 7 7
TEXAS,
Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 1 2 ) 3 4 6 - 7 8 3 0
Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 2 ) 9 8 5 - 1 3 4 4
Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 8 1 ) 3 76 - 8 0 8 4
VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 0 3 ) 7 3 6 - 9 5 6 8
International
AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . . T E L ( 6 1 ) 2 - 8 8 - 7 7 7 - 2 2 2
BELGIUM, Antwerpen . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 2 ) 3 - 2 4 8 - 4 3 - 0 0
BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 5 5 ) 1 1 - 5 5 0 1 - 2 1 0 5
CHINA,
Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 1 0 - 6 5 1 0 - 2 1 8 8
Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 2 1 - 6 3 5 - 0 0 8 3 8
Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 7 5 5 - 24 6 - 1 5 5 0
FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7
FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 9 7 5 1 0 1 0
GERMANY,
Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 6 1 7 2 - 9 2 6 7 0
Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0
HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . . T E L ( 8 5 ) 2 - 2 9 5 6 - 0 3 8 8
ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1
INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 6 2 3 - 8 6 2 0
JAPAN,
Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 6 - 6 2 4 3 - 3 2 5 0
Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 3 - 3 3 4 6 - 7 6 0 0
KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 2 ) 2 - 3 4 6 8 - 2 6 0 0
RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22
SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 6 ) 8 - 5 62 - 5 4 0 - 0 0
TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 8 6 ) 2 - 8 7 7 3 - 1 5 5 5
UNITED KINGDOM,
Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 2 76 - 8 0 3 1 0 0
Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 9 4 2 - 2 7 2 8 8 8
Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
es
ARIZONA,
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 8 0 ) 8 3 9 - 2 3 2 0
CALIFORNIA,
Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 8 ) 8 7 8 - 5 8 0 0
Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 2 6 1 - 2 1 2 3
San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 8 ) 2 7 8 - 4 9 5 0
Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 3 5 0 - 4 8 0 0
CANADA,
Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . . ( 6 0 4 ) 4 3 0 - 3 6 8 0
Calgary, Alberta - Davetek Marketing. . . . . . . . . . . . . . . . . ( 4 0 3 ) 2 8 3 - 3 5 7 7
Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . . ( 6 1 3 ) 5 9 2 - 9 5 4 0
Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . ( 9 0 5 ) 6 7 2 - 2 0 3 0
St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 7 4 7 - 1 2 1 1
COLORADO,
Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 2 7 7 - 0 4 5 6
FLORIDA,
Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . . ( 3 2 1 ) 7 2 8 - 7 7 0 6
Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . . ( 9 5 4 ) 5 2 7 - 4 9 4 9
Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . . ( 4 0 7 ) 8 7 2 - 5 7 7 5
St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . . ( 7 2 7 ) 8 9 4 - 3 6 0 3
GEORGIA,
Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . ( 6 7 8 ) 5 8 4 - 1 1 2 8
ILLINOIS,
Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . . ( 8 4 7 ) 9 6 7 - 8 4 3 0
INDIANA,
Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 6 5 ) 4 5 7 - 7 2 4 1
IOWA,
Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . ( 3 1 9 ) 2 9 4 - 1 0 0 0
KANSAS,
Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 6 9 - 1 3 1 2
MASSACHUSETTS,
Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 3 8 - 0 8 7 0
MICHIGAN,
Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 0 ) 2 2 7 - 0 0 0 7
MINNESOTA,
St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . . ( 6 5 1 ) 69 9 - 0 2 0 0
MISSOURI,
St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 1 4 ) 9 9 7 - 4 5 5 8
NEW JERSEY,
Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 6 ) 8 6 6 - 1 2 3 4
NEW YORK,
Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 7 4 1 - 7 1 1 6
East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 3 1 5 ) 4 3 7 - 8 3 4 3
Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 5 8 6 - 3 6 6 0
Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . ( 5 1 6 ) 5 3 6 - 4 2 4 2
NORTH CAROLINA,
Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 6 - 5 7 2 8
OHIO,
Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . ( 4 4 0 ) 8 1 6 - 1 6 6 0
Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 7 8 1 - 0 7 2 5
Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . ( 9 3 7 ) 8 9 8 - 9 6 1 0
Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 5 2 3 - 1 9 9 0
OREGON,
Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 6 7 0 - 0 5 5 7
UTAH,
Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . . ( 8 0 1 ) 2 8 8 - 2 5 0 0
VIRGINIA,
Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 7 6 1 - 2 2 5 5
WASHINGTON,
Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 2 5 ) 8 2 2 - 9 2 2 0
WISCONSIN,
Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . . ( 2 6 2 ) 5 74 - 9 3 9 3
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
CHILE,
Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993
COLUMBIA,
Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2
MEXICO,
Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 3 ) 8 1 7 - 3 9 0 0
Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 5 ) 7 5 2 - 2 7 2 7
Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . . ( 5 2 8 ) 3 69 - 6 8 2 8
PUERTO RICO,
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 7 ) 8 5 1 - 6 0 0 0
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com
©2003 Advanced Micro Devices, Inc.
01/03
Printed in USA