ETC ESJA28-02S

ESJA28
(2.2kV, 2.7kV/10mA)
Outline Drawings
HIGH VOLTAGE DIODE
ESJA19 is high reliability resin molded type high voltage
diode in small size package which is sealed (a multilayed
mesa type silicon chip) by epoxy resin.
Cathode Mark
Lot No.
o 2.5
27 min.
Features
High reliability design.
Ultra small pakage.
High temperature resistivity
6.5
o 0.5
27 min.
Cathode Mark
Type
Applications
Distributor-less Ignition system of Coil Distributed
Type for Automobile
Mark
ESJA28-02S
Maximum Ratings and Characteristics
ESJA28-03
Absolute Maximum Ratings
Items
Symbols
Repetitive Peak Reverse Voltage
VRRM
Non-Repetitive Peak Reverse Voltage
VRSM
Average Output Current
IO
Surge Current
IFSM
ESJA28
Condition
f=60Hz
Ignition Pulse
-02S
-03
2.2
2.7
kV
2.5
3.0
kV
f=150Hz,1minute
60 Hz Sine wave
10
60 Hz Sine-half wave
mA
1.0
peak value
Operating Junction Temperature
Tj
Storage Temperature
Tstg
Units
150
A
°C
-40 to +150
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
ESJA28
-02S
-03
7
8.4
Units
Maximum Forward Voltage Drop
VF
IF=10mA
Maximum Reverse Current
IR1
VR=2.2kV
5
µA
Maximum Reverse Current
IR2
VR=2.5kV
10
µA
Minimum Avalanche Breakdown Voltage
Vz
Iz=100µA
2.7
V
kV
ESJA28(2.2kV,2.7kv/5mA)
Characteristics
100
ESJA28-03
Tj=150°C
1
ESJA28-02S
80
ESJA28-03
I
60
[mA]
Tj=100°C
0.1
IR
F
ESJA28-02S
[µA]
40
Tj=100°C
0.01
Tj= 25°C
ESJA28-03
ESJA28-02S
20
Tj= 25°C
ESJA28-03
ESJA28-02S
0
1E-3
0
2
4
V
6
F
8
10
0
1
2
[V]
VR
Forward Characteristics
3
4
[kV]
Reverse Characteristics
2.0
Tj=25°C
f=1MHz
1.6
100
I
Cj 1.2
R
[ µ A]
[pF]
10
0.8
Tj= 25°C
Tj=100°C
ESJA28-02S
ESJA28-02S
0.4
ESJA28-03
ESJA28-03
0.0
1
0
40
80
V Bias
120
160
200
[V]
2
4
V
6
AV
[kV]
8
10
Avalanche Breakdown Voltage
Junction Capacitance Characteristics
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com