ETC FM175

FM 175
175 Watts, 28 Volts
Broadcast 88 - 108 MHz
GENERAL DESCRIPTION
TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is
designed for pulsed systems in the frequency band 88-108 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. Surface passivation eliminates contamination and extends life. Low
thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55HW, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
190 Watts
65 Volts
4.0 Volts
16 Amps
- 65 to + 150 oC
+ 200 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 88-108 MHz
Vcc = 28 Volts
BVebo
BVces
BVceo
Cob
hFE
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdoown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 25 mA
Ic = 50mA
Vcb = 28V
Ic = 8.5A, Vce=5V
Tc = 70oC
θjc1
TEST
CONDITIONS
MIN
TYP
MAX
175
22
9.0
10
70
F = 108 MHz
UNITS
Watts
Watts
dB
%
4:1
Volts
Volts
Volts
pF
4.0
65
33
105
10
0.7
o
C/W
Note 1: Tc= + 25oC unless otherwise specified
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
FM 175
August 1996