FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Surface passivation eliminates contamination and extends life. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55HW, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 190 Watts 65 Volts 4.0 Volts 16 Amps - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 88-108 MHz Vcc = 28 Volts BVebo BVces BVceo Cob hFE Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdoown Capacitance Collector to Base DC - Current Gain Thermal Resistance Ie = 20 mA Ic = 25 mA Ic = 50mA Vcb = 28V Ic = 8.5A, Vce=5V Tc = 70oC θjc1 TEST CONDITIONS MIN TYP MAX 175 22 9.0 10 70 F = 108 MHz UNITS Watts Watts dB % 4:1 Volts Volts Volts pF 4.0 65 33 105 10 0.7 o C/W Note 1: Tc= + 25oC unless otherwise specified Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 FM 175 August 1996