SIRECTIFIER MBR10150FCT

MBR10150FCT
Power Schottky Rectifier - 10Amp 150Volt
□ Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
ITO-220AB
L
B
□ Application
-AC/DC Switching Adaptor
-Switch-Mode Power Supply
M
C
D
K
A
□ Absolute maximum ratings
E
Symbol
Ratings
Unit
Conditions
IF(AV)
10
A
At Tc=125ºC
VRRM
150
V
IFSM
120
A
VF(max)
0.92
V
Tj
-50 to +175
ºC
Tstg
-50 to +150
ºC
Maximum Instantaneous
Forward Voltage
Maximum Reverse Current At
Rated DC Blocking Voltage
Voltage Rate of Change
Symbol
VF
IR
dv/dt
G
Maximum repetitive peak
I
J
reverse voltage
8.3ms single half sine-wafe
H
single shot
Conditions
0.92V
Tc=25ºC
0.75V
Tc=125ºC
50µA
Tc=25ºC
10mA
Tc=125ºC
10,000 V/µs
Rated VR
Note: (1)Pulse Test : 380µs pulse width, 2% duty cycle
N
K
A2
DIM
Ratings
H
A1
At IF=5A, Tc=25ºC
□ Electrical characteristics
Parameters
F
A
B
C
D
E
F
G
H
I
J
K
L
M
N
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.577
.600
14.65 15.25
.386
.406
9.80
10.30
.102
.114
2.60
2.90
.258
.274
6.55
6.95
.315
.331
8.00
8.40
.148
.159
3.75
4.05
.508
.531
12.90 13.50
.089
.100
2.25
2.55
.022
.028
0.55
0.70
.022
.028
0.55
0.70
.126
.138
3.20
3.50
.173
.185
4.40
4.70
.055
.063
1.40
1.60
.102
.114
2.60
2.90
NOTE
April 2004
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1
MBR10150FCT
5.0
4.5
d= 0.2
d= 0.5
6
d= 0.1
Rth(j-a) = Rth(j-c)
4.0
d= 0.05
5
d= 1
3.0
4
IF(av)(A)
PF(av)(W)
3.5
2.5
2.0
3
Rth(j-a) = 15℃/W
1.5
2
1.0
1
0.5
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
25
50
75
100
125
150
175
Tamb(℃)
IF(av)(A)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
Figure 2. Average forward current versus ambient
temperature (d= 0.5, per diode)
80
1.0
70
0.8
IM(A)
50
Tc = 50℃
40
Tc = 75℃
30
Zth(j-c)/R th(j-c)
60
d= 0.5
0.6
0.4
d= 0.2
d= 0.1
20
0.2
Tc = 125℃
Single pulse
10
0
1E-3
1E-2
1E-1
0.0
1E-3
1E+0
1E-2
1E-1
1E+0
t(s)
tp(s)
Figure 3. Non repetitive surge peak forward current
versus overload duration (maximum values, per diode)
Figure 4. Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
1E+5
200
F = 1MHz
Tj = 25℃
Tj = 175℃
1E+4
Tj = 150℃
1E+3
100
1E+2
1E+1
C(pF)
IR(µ A)
Tj = 125℃
Tj = 75℃
1E+0
50
20
Tj = 25℃
1E-1
1E-2
10
0
25
50
75
100
125
150
1
2
VR(V)
5
10
20
50
100
200
VR(V)
Figure 5. Reverse leakage current versus reverse
voltage applied (ytpical values, per diode)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values, per diode)
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MBR10150FCT
80
100
70
Rth(j-a)( ℃/W)
60
IFM(A)
10
Tj = 125℃
Typical values
1
Tj = 25℃
50
40
30
20
10
Tj = 125℃
0
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VFM(V)
Figure 7. Forward voltage drop versus forward
current (maximum values, per diode)
2
4
2.0
6
8
10
12
14
16
18
20
S(cm2)
Figure 8. Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
copper thickness : 35µ m) (STPS10150CG only)
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