MBR10150FCT Power Schottky Rectifier - 10Amp 150Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency ITO-220AB L B □ Application -AC/DC Switching Adaptor -Switch-Mode Power Supply M C D K A □ Absolute maximum ratings E Symbol Ratings Unit Conditions IF(AV) 10 A At Tc=125ºC VRRM 150 V IFSM 120 A VF(max) 0.92 V Tj -50 to +175 ºC Tstg -50 to +150 ºC Maximum Instantaneous Forward Voltage Maximum Reverse Current At Rated DC Blocking Voltage Voltage Rate of Change Symbol VF IR dv/dt G Maximum repetitive peak I J reverse voltage 8.3ms single half sine-wafe H single shot Conditions 0.92V Tc=25ºC 0.75V Tc=125ºC 50µA Tc=25ºC 10mA Tc=125ºC 10,000 V/µs Rated VR Note: (1)Pulse Test : 380µs pulse width, 2% duty cycle N K A2 DIM Ratings H A1 At IF=5A, Tc=25ºC □ Electrical characteristics Parameters F A B C D E F G H I J K L M N DIMENSIONS INCHES MM MIN MAX MIN MAX .577 .600 14.65 15.25 .386 .406 9.80 10.30 .102 .114 2.60 2.90 .258 .274 6.55 6.95 .315 .331 8.00 8.40 .148 .159 3.75 4.05 .508 .531 12.90 13.50 .089 .100 2.25 2.55 .022 .028 0.55 0.70 .022 .028 0.55 0.70 .126 .138 3.20 3.50 .173 .185 4.40 4.70 .055 .063 1.40 1.60 .102 .114 2.60 2.90 NOTE April 2004 http:// www.sirectifier.com 1 MBR10150FCT 5.0 4.5 d= 0.2 d= 0.5 6 d= 0.1 Rth(j-a) = Rth(j-c) 4.0 d= 0.05 5 d= 1 3.0 4 IF(av)(A) PF(av)(W) 3.5 2.5 2.0 3 Rth(j-a) = 15℃/W 1.5 2 1.0 1 0.5 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 25 50 75 100 125 150 175 Tamb(℃) IF(av)(A) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (d= 0.5, per diode) 80 1.0 70 0.8 IM(A) 50 Tc = 50℃ 40 Tc = 75℃ 30 Zth(j-c)/R th(j-c) 60 d= 0.5 0.6 0.4 d= 0.2 d= 0.1 20 0.2 Tc = 125℃ Single pulse 10 0 1E-3 1E-2 1E-1 0.0 1E-3 1E+0 1E-2 1E-1 1E+0 t(s) tp(s) Figure 3. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (per diode) 1E+5 200 F = 1MHz Tj = 25℃ Tj = 175℃ 1E+4 Tj = 150℃ 1E+3 100 1E+2 1E+1 C(pF) IR(µ A) Tj = 125℃ Tj = 75℃ 1E+0 50 20 Tj = 25℃ 1E-1 1E-2 10 0 25 50 75 100 125 150 1 2 VR(V) 5 10 20 50 100 200 VR(V) Figure 5. Reverse leakage current versus reverse voltage applied (ytpical values, per diode) Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) http: //www.sirectifier.com 2 MBR10150FCT 80 100 70 Rth(j-a)( ℃/W) 60 IFM(A) 10 Tj = 125℃ Typical values 1 Tj = 25℃ 50 40 30 20 10 Tj = 125℃ 0 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM(V) Figure 7. Forward voltage drop versus forward current (maximum values, per diode) 2 4 2.0 6 8 10 12 14 16 18 20 S(cm2) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness : 35µ m) (STPS10150CG only) http:// www.sirectifier.com 3