Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT General Description Features The AH211 is an integrated Hall sensor with output driver and frequency generator designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection, a temperature compensation circuit to compensate the temperature drift of Hall sensitivity, two complementary open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. · · · · · · · AH211 On-Chip Hall Sensor 3.5V to 16V Supply Voltage 400mA (avg) Output Sink Current -20oC to 85oC Operating Temperature Built-in FG Output Low Profile TO-94 (SIP-4L) Package ESD Rating: 300V (Machine Model) Applications · · · · Place the device in a variable magnetic field, while the magnetic flux density is larger than threshold BOP, DO will be turned on (low) and DOB (and FG) will be turned off (high). This output state is held till the magnetic flux density reversal falls below BRP causing DO to be turned off (high) and DOB (and FG) turned on (low). Dual-Coil Brushless DC Motor Dual-Coil Brushless DC Fan Revolution Counting Speed Measurement AH211 is available in TO-94 (SIP-4L) package. TO-94 Figure 1. Package Type of AH211 Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 1 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Pin Configuration Z4 Package (TO-94) 4 GND 3 2 DOB DO 1 FG Figure 2. Pin Configuration of AH211 (Front View) Pin Description Pin Number Pin Name Function 1 FG Frequency Generation 2 DO Output 1 3 DOB Output 2 4 GND Ground Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 2 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Functional Block Diagram Regulator Hall Sensor 2 Temperature Compensation DO Schmitt Trigger Amplifier Output Driver 3 DOB 4 GND 1 FG Figure 3. Functional Block Diagram of AH211 Ordering Information AH211 - Circuit Type E1: Lead Free Package Z4: TO-94 (SIP-4L) Magnetic Characteristics A: 5 to 60 Gauss B: 90 Gauss Package Temperature Range TO-94 -20 to 85 oC Part Number Marking ID Packing Type AH211Z4-AE1 AH211 Bulk AH211Z4-BE1 AH211 Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 3 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Absolute Maximum Ratings (Note 1) (TA=25oC) Parameter Supply Voltage Magnetic Flux Density Symbol Value Unit VCC 20 V B Unlimited Gauss 400 mA 600 mA 800 mA Continuous Output Current IO Hold Peak (start up) FG Current IFG 20 mA Power Dissipation PD 550 mW Die to atmosphere θJA 227 oC/W Die to package case θJC 49 oC/W TSTG -50 to 150 oC ESD (Machine Model) 300 V ESD (Human Body Model) 3000 V Thermal Resistance Storage Temperature Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Recommended Operating Conditions (TA=25oC) Parameter Supply Voltage Ambient Temperature Symbol Min Max VCC 3.5 16 V 85 o TA -20 Mar. 2007 Rev. 1.3 Unit C BCD Semiconductor Manufacturing Limited 4 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Electrical Characteristics (TA=25oC, VCC=14V, unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit B>150Gauss, VCC=3.5V, VDOB=VCC, IDO=100mA (or B<-150Gauss, VCC=3.5V, VDO=VCC, IDOB=100mA) 1.1 B>150Gauss, VDOB=VCC, IDO=400mA (or B<-150Gauss, VDO=VCC, IDOB=400mA) 1.05 1.3 V VSATF B<-150Gauss, VDO=VCC, IFG=20mA 0.35 0.6 V FG Leakage Current IOLF B>150Gauss, VDOB=VCC, VFG=16V 0.1 10 µA Supply Current ICC B>150Gauss, VDOB=VCC, (or B<-150Gauss, VDO=VCC ) 8 10 mA V VSAT Output Saturation Voltage FG Saturation Voltage Output Rise Time tr RL=1kΩ, CL=10pF 3.0 10 µs Output Fall Time tf RL=1kΩ, CL=10pF 0.3 1.0 µs Switch Time Differential ∆t RL=1kΩ, CL=10pF 3.0 10 µs Output Zener Breakdown Voltage VZ 55 V Magnetic Characteristics (TA=25oC) Parameter Operating Point Symbol BOP Grade Min Typ Max Unit A 5 30 60 Gauss 90 Gauss -5 Gauss B Releasing Point Hysteresis BRP A -60 B -90 -30 Gauss 60 BHYS Mar. 2007 Rev. 1.3 Gauss BCD Semiconductor Manufacturing Limited 5 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Magnetic Characteristics (Continued) +14V AH211 S Marking Side N FG DO DOB GND 1 2 3 4 R1 FG (VFG) 1kΩ R2 DO (VOUT1) 1kΩ R3 DOB (VOUT2) 1kΩ C1 C2 C3 10pF 10pF 10pF Figure 4. Basic Test Circuit DO (V) DOB (V) 16 16 VCC 14 14 12 12 10 10 8 8 6 6 4 4 2 -40 -20 0 VSAT 20 2 VSAT 40 -40 Magnetic Flux Density B (Gauss) VCC -20 0 20 40 Magnetic Flux Density B (Gauss) Figure 5. VDO vs. Magnetic Flux Density Figure 6. VDOB vs. Magnetic Flux Density Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 6 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Typical Performance Characteristics 80 8 60 7 40 BOP, BRP, BHYS (GS) ICC (mA) 6 5 4 3 20 BOP BRP BHYS 0 -20 2 -40 1 0 0 2 4 6 8 10 12 14 16 18 20 22 -60 4.0 24 6.0 8.0 VCC (V) 10.0 12.0 14.0 16.0 VCC (V) Figure 7. ICC vs. VCC Figure 8. BOP/BRP/BHYS vs. VCC 80 800 600 40 20 PD (mW) BOP, BRP, BHYS (Gauss) 60 0 BOP BRP BHYS -20 400 200 -40 -60 -20 -10 0 10 20 30 40 50 60 70 0 -25 80 o 0 25 50 75 100 125 150 o TA ( C) TA ( C) Figure 9. BOP/BRP/BHYS vs. Ambient Temperature Figure 10. PD vs. Ambient Temperature Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 7 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Typical Performance Characteristics (Continued) 1200 12 11 PIN2 PIN3 VCC=14V 10 1000 8 7 VSAT (mV) Supply Current (mA) 9 IO=300mA IO=400mA VCC=14V 1100 6 5 900 800 4 700 3 2 600 1 0 -20.0 0.0 20.0 40.0 60.0 500 -20.0 80.0 0.0 20.0 40.0 60.0 80.0 o Ambient Temparature ( C) o Ambient Temparature ( C) Figure 11. Supply Current vs. Ambient Temperature Figure 12. VSAT vs. Ambient Temperature Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 8 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Application Information According AH211's specification, if VDD=5V, R1 must be larger than 220Ω. Figure 13 is the typical application circuit for AH211. Usually, there are three wires for fan connection: the red is input of power supply; the yellow is the output of FG; the black is the ground. R1 is an external pull-up resister for the use of measuring FG signal from fan. The value of R1 could be decided by the transistor saturation voltage (VON), sink current (IFG), and pullup voltage (VDD). The calculation formula is: D1 is the reverse protection diode. If the red and black wires reversely connected, the current will flow from the ground via IC and coils L1 and L2 to power supply. Under such circumstances, the IC and coils are easy to be burned out. Therefore, the reverse protection diode D1is necessary. However, D1 will also cause an extra voltage drop on the supply voltage. R1=(VDD-VON) / IFG C1 is a capacitor to reduce the ripple noise caused by the transient of the output stages. The amplitude of the ripple noise depends on the coil impedance and its characteristics. For example: VDD=5V for TTL level. If saturation voltage is 0.6V (IC specification) IFG=20mA ( ≤20mA) , then R1=220Ω ; If saturation voltage is 0.1V, IFG=1mA (=<20mA) , the value of R1=4.9kΩ D1 VCC (Red Wire) AH211 C1 VDD COIL1 FG DO 1 2 COIL2 DOB GND 3 4 R1 1kΩ FG (Yellow Wire) GND (Black Wire) Figure 13. AH211 Typical Application Circuit Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 9 Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211 Mechanical Dimensions TO-94 0.500(0.020) 0.700(0.028) 3.780(0.149) 4.080(0.161) Unit: mm(inch) 45°TYP 1.400(0.055) 1.800(0.071) 0.700(0.028) 0.900(0.035) 4.980(0.196) 5.280(0.208) 0.360(0.014) 0.510(0.020) 1.850(0.073) 1.250(0.050) Hall Sensor Location 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.900(0.587) 15.300(0.602) 1.270(0.050) TYP 3.710(0.146) 3.910(0.154) Mar. 2007 Rev. 1.3 BCD Semiconductor Manufacturing Limited 10 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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