WSH410 Hall Effect Sensor IC with Complementary Output Drivers and Frequency Generator Features: Operate from 2.8V to 20V supply voltage. On-chip Hall sensor. Internal bandgap regulator allows temperature compensated operations and a wide operating voltage range. High output sinking capability up to 400mA for driving large load. Lower current change rate reduces the peak output voltages during switching. Available in rugged low profile SIP-4L/SIP-5L packages. Built-in protection diode for reverse power supply fault. General Description: WSH410 is designed to integrate Hall sensor with complementary output drivers and frequency generator together on the same chip, it is suitable for speed measurement, revolution counting, positioning, and DC brushless motors. It includes a temperature compensated voltage regulator, a differential amplifier, a Hysteresis controller, two open-collector output drivers capable of sinking 400mA current load. An on-chip protection diode is implemented to prevent reverse power fault. The temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. Subsequently, the open collector output switches to the appropriate state. WSH410 are rated for operation over temperature range from –20˚ C to125˚C and voltage ranges from 2.8V to 20V. Name Vcc OUT1 OUT2 Vss P/I/O P O O P Pin# Description Positive Power Supply Output Pin #1 Output Pin #2 Ground Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 1 WSH410 Name Vcc OUT1 OUT2 FG Vss P/I/O P O O O P Supply Voltage Pin# Description Positive Power Supply Output Pin #1 Output Pin #2 Frequency Generator Ground Vcc -------------------------- 20V Output / FG breakdown Voltage Vout/Vfg --------------------- 25V Magnetic flux density B -------------------------- Unlimited Reverse Protection Voltage Output Current continuous Vr Ic --------------------------------------------------- 20V 300mA Hold current Peak current Ih Ip ------------------------------------------------ 400mA 800mA FG ON Current (continuous) Operating Temperature Range If Ta --------------------------------------------------- 20mA (-20˚C to +125˚C) Storage Temperature Range Package Power Dissipation Ts -------------------------Pd -------------------------- (-65˚C to +150˚C) 500mw for SIP-4L SIP-5L Characteristic Supply Voltage Output Saturation Voltage FG Saturation Voltage Output Leakage Current Supply Current Symbol Vcc Vout(sat) Vfg(sat) Ileakage (T=+25˚C, Vcc=2.8V to 20V) Test Conditions Min Typ Max Units V Vcc=20V, Ic=200mA V B > Bop Vcc=20V, If=10mA V B > Bop Vcc=20V, B < Brp UA < Isupply Vcc=20V, Output & FG Open Output / FG Rising Tr Vcc=12V, RL=820 Time CL=20Pf Output / FG Falling Tf Vcc=12V, RL=820 Time CL=20Pf Output / FG Time t Vcc=12V, RL=820 Differential CL=20Pf MA 3.0 Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 2 Us Us Us WSH410 Characteristics Symbol Operate Point Bop Release Point Brp Hysteresis Window Ta= -20˚C to +90˚C Min Typ. Max 70 120 Quantity -120 Bop-Brp -70 40 Unit Gauss Gauss 200 Gauss SIP- 4L: WSH410-XPAN3 (120 Guass) N:Non-lead Process SIP- 5L: WSH410-XPCN3 (120 Guass) Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 3 WSH410 SIP-4L SIP-5L Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 4 WSH410 SIP-4L Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 5 WSH410 SIP-5L Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 6 WSH410 SIP-4L Figure 1. SIP-5L Figure 2. Winson reserves the right to make changes to improve reliability or manufacturability. ©Winson Semiconductor Corp. 2005/8/12 7