CY62136V MoBL™ 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power Functional Description The CY62136V is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the Truth Table at the back of this data sheet for a complete description of read and write modes. The CY62136V is available in 48-ball FBGA and standard 44-pin TSOP Type II (forward pinout) packaging. Logic Block Diagram Pin Configurations TSOP II (Forward) Top View A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 A3 A2 A1 A0 SENSE AMPS A8 A7 A6 A5 A4 ROW DECODER DATA IN DRIVERS 128K x 16 RAM Array 1024 X 2048 I/O0–I/O7 I/O8–I/O15 COLUMN DECODER A9 A10 A11 A12 A13 A14 A15 A16 BHE WE CE OE BLE 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC MoBL and More Battery Life are trademarks of Cypress Semiconductor Corporation. Cypress Semiconductor Corporation Document #: 38-05087 Rev. ** • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised September 5, 2000 CY62136V MoBL™ Pin Configurations (continued) FBGA Top View 1 2 3 4 5 6 BLE OE A0 A1 A2 NC A I/O8 BHE A3 A4 CE I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VSS I/O11 NC A7 I/O3 VCC D VCC I/O12 NC A16 I/O4 VSS E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 NC A12 A13 WE I/O7 G NC A8 A9 A10 A11 NC H Maximum Ratings DC Voltage Applied to Outputs in High Z State[1]....................................–0.5V to VCC + 0.5V (Above which the useful life may be impaired. For user guidelines, not tested.) DC Input Voltage[1].................................–0.5V to VCC + 0.5V Storage Temperature ..................................–65°C to +150°C Output Current into Outputs (LOW)..............................20 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Static Discharge Voltage............................................>2001V (per MIL-STD-883, Method 3015) Supply Voltage to Ground Potential................–0.5V to +4.6V Latch-Up Current.....................................................>200 mA Operating Range Device Range CY62136V Industrial Ambient Temperature VCC −40°C to +85°C 2.7V to 3.6V Product Portfolio Power Dissipation (Industrial) VCC Range Product CY62136V VCC(min.) 2.7V VCC(typ.) 3.0V [2] Operating (ICC) VCC(max.) Power 3.6V LL [2] Typ. 7 mA Maximum 15 mA Standby (ISB2) [2] Typ. 1 µA Maximum 15 µA Notes: 1. VIL(min) = –2.0V for pulse durations less than 20 ns. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ, TA = 25°C. Document #: 38-05087 Rev. ** Page 2 of 12 CY62136V MoBL™ Electrical Characteristics Over the Operating Range CY62136V Parameter Description Test Conditions Min. Typ.[2] Max. Unit VOH Output HIGH Voltage IOH = −1.0 mA VCC = 2.7V VOL Output LOW Voltage IOL = 2.1 mA VCC = 2.7V VIH Input HIGH Voltage VIL Input LOW Voltage 0.8 V IIX Input Load Current GND < VI < VCC −1 +1 +1 µA IOZ Output Leakage Current GND < VO < VCC, Output Disabled −1 +1 +1 µA ICC VCC Operating Supply Current IOUT = 0 mA, f = fMAX = 1/tRC, CMOS levels 7 15 mA 1 2 mA 100 µA 15 µA 2.4 VCC = 3.6V 2.2 VCC = 2.7V −0.5 VCC = 3.6V IOUT = 0 mA, f = 1 MHz, CMOS Levels ISB1 Automatic CE Power-Down Current— CMOS Inputs CE > VCC−0.3V, VIN > VCC−0.3V or VIN < 0.3V, f = fMAX ISB2 Automatic CE Power-Down Current— CMOS Inputs CE > VCC−0.3V VIN > VCC−0.3V or VIN < 0.3V, f = 0 VCC = 3.6V LL V 1 0.4 V VCC + 0.5V V Capacitance[3] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max. Unit 6 pF 8 pF TA = 25°C, f = 1 MHz, VCC= VCC(typ) Thermal Resistance Description Thermal Resistance (Junction to Ambient)[3] Test Conditions Symbol BGA TSOPII Unit Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board ΘJA 55 60 °C/W ΘJC 16 22 °C/W Thermal Resistance (Junction to Case)[3] Note: 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05087 Rev. ** Page 3 of 12 CY62136V MoBL™ AC Test Loads and Waveforms R1 ALL INPUT PULSES R1 VCC VCC OUTPUT VCC Typ OUTPUT 10% 90% 10% 90% GND R2 30 pF 5 pF INCLUDING JIG AND SCOPE Rise Time: 1 V/ns INCLUDING JIG AND SCOPE Fall Time: 1 V/ns (b) (c) 3.0V UNIT R1 1105 Ohms R2 1550 Ohms RTH 645 Ohms VTH 1.75V Volts (a) Equivalent to: R2 THÉVENIN EQUIVALENT RTH OUTPUT V Parameters Data Retention Characteristics (Over the Operating Range) Parameter Conditions[5] Description Min. Typ.[2] 1.0 Max. Unit 3.6 V 7.5 µA VDR VCC for Data Retention ICCDR Data Retention Current tCDR[3] Chip Deselect to Data Retention Time 0 ns tR[4] Operation Recovery Time 70 ns VCC = 1.0V CE > VCC − 0.3V, VIN > VCC − 0.3V or VIN < 0.3V No input may exceed VCC+0.3V LL 0.5 Data Retention Waveform DATA RETENTION MODE VCC VCC(min.) tCDR VDR > 1.0 V VCC(min.) tR CE Notes: 4. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 ms or stable at VCC(min) > 100 ms. 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to VCC typ., and output loading of the specified IOL/IOH and 30-pF load capacitance. Document #: 38-05087 Rev. ** Page 4 of 12 CY62136V MoBL™ Switching Characteristics Over the Operating Range[5] 55 ns Parameter Description Min. 70 ns Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 55 tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 55 70 ns tDOE OE LOW to Data Valid 25 35 ns 55 [6] tLZOE OE LOW to Low Z 10 OE HIGH to High Z tLZCE CE LOW to Low Z[6] 70 25 ns 25 10 ns ns tHZCE CE HIGH to High Z tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 55 70 ns tDBE BLE / BHE LOW to Data Valid 25 35 ns tLZBE BLE / BHE LOW to Low Z tHZBE 25 ns ns 5 10 [6, 7] ns 10 5 [6, 7] tHZOE 70 0 [6, 7] BLE / BHE HIGH to High Z 0 5 [8] 25 ns 5 25 ns ns 25 ns [8, 9] WRITE CYCLE tWC Write Cycle Time 55 70 ns tSCE CE LOW to Write End 45 60 ns tAW Address Set-Up to Write End 45 60 ns tHA Address Hold from Write End 0 0 ns tSA Address Set-Up to Write Start 0 0 ns tPWE WE Pulse Width 40 50 ns tBW BLE / BHE LOW to Write End 50 60 ns tSD Data Set-Up to Write End 25 30 ns tHD Data Hold from Write End 0 0 ns tHZWE tLZWE WE LOW to High Z [6, 7] 20 [6] WE HIGH to Low Z 5 25 10 ns ns Switching Waveforms Read Cycle No. 1 [10, 11] tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Notes: 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 9. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. 10. Device is continuously selected. OE, CE = VIL. 11. WE is HIGH for read cycle. Document #: 38-05087 Rev. ** Page 5 of 12 CY62136V MoBL™ Switching Waveforms (continued) Read Cycle No. 2 [11, 12] tRC CE tPD tHZCE tACE OE tHZOE tDOE BHE/BLE tLZOE tHZBE tDBE tLZBE DATA OUT HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU ICC 50% 50% ISB [8, 13, 14] Write Cycle No. 1 (WE Controlled) tWC ADDRESS CE tAW tHA tSA WE tPWE tBW BHE/BLE OE tSD DATA I/O NOTE 15 tHD DATAIN VALID tHZOE Notes: 12. Address valid prior to or coincident with CE transition LOW. 13. Data I/O is high impedance if OE = VIH. 14. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 15. During this period, the I/Os are in output state and input signals should not be applied. Document #: 38-05087 Rev. ** Page 6 of 12 CY62136V MoBL™ Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) [8, 13, 14] tWC ADDRESS tSCE CE tSA tAW tHA tBW BHE/BLE tPWE WE tSD DATA I/O tHD DATAIN VALID Write Cycle No. 3 (WE Controlled, OE LOW) [9, 14] tWC ADDRESS CE tAW tBW BHE/BLE WE tHA tSA tSD DATA I/O NOTE 15 tHZWE Document #: 38-05087 Rev. ** tHD DATAIN VALID tLZWE Page 7 of 12 CY62136V MoBL™ Switching Waveforms (continued) Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) [15] tWC ADDRESS CE tAW tHA tBW BHE/BLE tSA WE tSD DATA I/O DATAIN VALID NOTE 15 tHZWE Document #: 38-05087 Rev. ** tHD tLZWE Page 8 of 12 CY62136V MoBL™ Typical DC and AC Characteristics Normalized Operating Current vs. Supply Voltage 1.4 Standby Current vs. Supply Voltage 35 MoBL 30 1.2 MoBL 0.8 ICC 25 ISB (µA) 1.0 0.6 20 15 10 0.4 5 0.2 0 0.0 1.7 2.2 2.7 3.2 SUPPLY VOLTAGE (V) 3.7 1.0 2.7 2.8 3.7 1.9 SUPPLY VOLTAGE (V) Access Time vs. Supply Voltage 80 MoBL 70 60 TAA (ns) 50 40 30 20 10 1.0 3.7 2.7 2.8 1.9 SUPPLY VOLTAGE (V) Truth Table CE WE OE BHE BLE H X X X X High Z Deselect/Power-Down Standby (ISB) L H L L L Data Out (I/OO–I/O15) Read Active (ICC) L H L H L Data Out (I/OO–I/O7); I/O8–I/O15 in High Z Read Active (ICC) L H L L H Data Out (I/O8–I/O15); I/O0–I/O7 in High Z Read Active (ICC) L H L H H High Z Deselect/Output Disabled Active (ICC) L H H L L High Z Deselect/Output Disabled Active (ICC) L H H H L High Z Deselect/Output Disabled Active (ICC) L H H L H High Z Deselect/Output Disabled Active (ICC) L L X L L Data In (I/OO–I/O15) Write Active (ICC) L L X H L Data In (I/OO–I/O7); I/O8–I/O15 in High Z Write Active (ICC) L L X L H Data In (I/O8–I/O15); I/O0 –I/O7 in High Z Write Active (ICC) Document #: 38-05087 Rev. ** Inputs/Outputs Mode Power Page 9 of 12 CY62136V MoBL™ Ordering Information Speed (ns) Ordering Code 55 CY62136VLL-55ZI 70 CY62136VLL-70ZI CY62136VLL-55BAI CY62136VLL-70BAI Package Name Z44 BA48 Z44 BA48 Operating Range Package Type 44-Pin TSOP II Industrial 48-Ball Fine Pitch BGA 44-Pin TSOP II 48-Ball Fine Pitch BGA Package Diagrams 48-Ball (7.00 mm x 7.00 mm) FBGA BA48 51-85096-D Document #: 38-05087 Rev. ** Page 10 of 12 62136V: 8/2000 Revision: February 2, 2001 CY62136V MoBL™ Package Diagrams (continued) 44-Pin TSOP II Z44 51-85087-A Document #: 38-05087 Rev. ** Page 11 of 12 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY62136V MoBL™ Document Title: CY62136V MoBL™ 128K x 16 Static RAM Document Number: 38-05087 REV. ECN NO. Issue Date Oreg. of Change Description of Change ** 107347 05/25/01 SZV Change from Spec #: 38-00728 to 38-05087 Document #: 38-05087 Rev. ** Page 12 of 12