Transys Electronics L I M I T E D NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage (RBE<1KΩ Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak Power Dissipation @ Ta=50ºC Storage Temperature THERMAL RESISTANCE Junction to Ambient SYMBOL VCEO VCER VCBO VEBO IC ICM PD Tj, Tstg VALUE 180 245 245 5 150 200 6 -55 to +200 UNITS V V V V mA mA W ºC Rth(j-a) 25 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Breakdown Voltage Collector Base Breakdown Current Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain SYMBOL BVCEO BVCBO BVEBO ICBO IEBO VCE(Sat) * VBE(on) * hFE TEST CONDITION IC=1mA,IB=0 IC=100µA, IE=0 IE=100µA, Ic=0 VCB=200V, IE=0 VCB=200V,IE=0,Tj=200ºC VEB=5V, IC=0 IC=100mA,IB=10mA IC=50mA,VCE=100V IC=50mA,VCE=100V MIN VALUE TYP MAX 180 245 5 15 550 100 3.5 1.0 22 UNITS V V V nA µA µA V V 60 DYNAMIC CHARACTERISTICS Transition Frequency Collector Base Time Constant Feedback Capacitance fT rb'Cc Cre *Pulse Test: Pulse Width <300µ µ s, Duty Cycle <2% IC=30mA, VCE=100V f=20MHz IE=10mA, VCB=10V, f=10MHz VCE=20V, IC=10mA, f=1.0MHz 145 30 3.5 MHz 100 ps pF BD115 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J K L K All dimensions are in mm E C B MIN MAX 8.50 9.39 7.74 8.50 6.09 6.60 0.40 0.53 — 0.88 2.41 2.66 4.82 5.33 0.71 0.86 0.73 1.02 12.70 — 42 DEG 48 DEG D G 2 F 1 PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR 3 L H 3 J 2 1 Packing Detail PACKAGE STANDARD PACK Details TO-39 Net Weight/Qty 500 pcs/polybag 540 gm/500 pcs INNER CARTON BOX OUTER CARTON BOX Size Qty Size Qty Gr Wt 3" x 7.5" x 7.5" 20K 17" x 15" x 13.5" 32K 40 kgs