TQM 7M5004 Preliminary Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block Diagram Features DCS / PCS in DCS / PCS Out Band Select TX_EN Logic VBATT VCC Mode Select VRAMP Power Control Vbias (digital) GSM 850 / 900 IN GSM 850 / 900 Out Product Description The TQM 7M5004 is an extremely small (7x7x1.1mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS efficiency. Two EDGE quiescent current states are provided to minimize current consumption during backed-off power settings. The module incorporates two highly-integrated InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM Operation. This eliminates the need for any external couplers, power detectors, current sensing etc., to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable, band select, mode (EDGE or GSM) inputs. Module construction is a low-profile overmolded land-grid array on laminate. Min GSM Pout 34.5 Efficiency 43 Pin 0 EDGE Pout 28.5 850 Band Typ Max 900 Band Typ Max Min DCS / PCS Typ Max Units 35.5 34.5 35.5 32.0 33 dBm 50 45 52 40/45 46/50 % • • GSM/EDGE handsets GSM/EDGE wireless cards & data links Package Size: LGA 7 x 7 x 1.1 mm Top View 0 2 0 2 dBm 29 28.5 29 28 28.5 dBm BS 20 23 20 25 % Tx_En 30.0 31.5 33.0 dB Vbatt -62 -58 2 4 20 23 Gain 29 30.5 32.0 -62 -58 4 37/36 4 38/37 40/39 -62 -58 dBc Gnd Vcc Mode RF_in_GSM Preliminary Data Sheet: Subject to change without notice Ground Ground Vramp Vbias (digital) For additional information and latest specifications, see our website: www.triquint.com Revision J, April 20, 2006 RF_out_DCS RF_in_DCS Ground Efficiency ACPR (400KHz) Min Applications Package Style Electrical Specifications (Nominal) Parameter • Very compact size – 7×7×1.1 mm3. • High GSM efficiency – GSM 850 50%, GSM900 52%, DCS 46%, PCS 50% • High EDGE efficiency – GSM 850 23%, GSM 900 23%, DCS 25%, PCS 25% • Low Quiescent Current Mode for EDGE Pout <= 18.5dBm (low-band) & <= 18dBm (high-band) • Positive supply voltage – 3.0 to 4.5 V • 50 Ω input and output impedances. • GPRS class 12. • CMOS band select and internal closed-loop power control for GSM Operation. • High-reliability InGaP technology. • Ruggedness 10:1 • No external Vref Required Gnd Ground RF_out_GSM 1