R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 875 Device Dissipation @25!C2 Maximum Voltage and Current 55 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 4.0 Collector Current (Ic) 30 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A !C !C ELECTRICAL CHARACTERISTICS @ 25!!C SYMBOL CHARACTERISTICS Pout Pin Pg "c VSWR1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1025 – 1150 MHz Vcc = 50 Volts PW = 10 #sec DF = 1% F = 1090 MHz MIN TYP MAX 375 85 6.5 40 UNITS W W dB % !:1 FUNCTIONAL CHARACTERISTICS @ 25!!C BVebo BVces hFE $jc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 20 mA Ic = 25 mA Vce = 5V, Ic = 300 mA 4.0 55 10 V V 0.2 !C/W NOTE 1: At rated output power and pulse conditions 2. At rated pulse conditions . Initial Issue June 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 DME 375A