ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B GSB649A P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GSB649A is designed for frequency power amplifier. Features *Low frequency power amplifier Complementary pair with GSD669A Package Dimensions D E TO-92 A S1 b1 S E A T IN G PLANE L REF. e1 e b A S1 b b1 C C Absolute Maximum Ratings(Ta = 25 VCBO VCEO VEBO IC ICP Tj TsTG PD PD Electrical Characteristics(Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -180 -160 -5 60 30 - REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ,unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation Total Power Dissipation (TC=25 ) Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 Ratings Unit -180 -160 -5 -1.5 -3 +150 -55 ~ +150 1 20 V V V A A W W ,unless otherwise specified) Typ. - Max. - 140 27 -10 -1 -1.5 200 - Unit V V V uA V V MHz pF Test Conditions IC=-1mA ,IE=0 IC=-10mA ,RBE= IE=-1mA ,IC=0 VCB=-160V , IE=0 lC=-600mA,IB=-50mA VCE=-5V,IC=-150mA VCE=-5V,IC=-150mA VCE=-5V,IC=-500mA VCE=-5V,IC=-150mA VCB=-10V ,IE=0,f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification Of hFE1 Rank Range B 60-120 C 100-200 1/3 ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B Typical Parameters Performance Characteristics Curve 2/3 ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 3/3