FREESCALE MHW8342N

Freescale Semiconductor
Technical Data
CATV Amplifier Module
MHW8342N
LIFETIME BUY
Features
• Specified for up to 132 - Channel Loading
• Excellent Distortion Performance
• Superior Gain, Return Loss and DC Current Stability over Temperature
• Silicon Bipolar Transistor Technology
• Unconditionally Stable Under All Load Conditions
Applications
• CATV Systems Operating in the 40 to 870 MHz Frequency Range
• Single Module High Gain Line Amplifier in Cable TV Distribution System
Description
• 24 Vdc Supply, 40 to 870 MHz, CATV High Gain Forward Amplifier Module
• Replaced MHW8342. There are no form, fit or function changes with this
part replacement.
• RoHS Compliant
870 MHz
35.5 dB GAIN
132 - CHANNEL
CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+ 55
dBmV
DC Supply Voltage
VCC
+ 28
Vdc
Operating Case Temperature Range
TC
- 20 to +100
°C
Storage Temperature Range
Tstg
- 40 to +100
°C
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
870
MHz
Power Gain
50 MHz
870 MHz
Gp
33.2
34
34
35.5
34.8
37
dB
Slope
40 - 870 MHz
S
0.5
1.5
2.75
dB
GF
—
0.3
0.8
dB
22
18
16
14
28
25
22
19
—
—
—
—
22
19
17
15
28
25
22
22
—
—
—
—
Gain Flatness (Peak To Valley)
Return Loss — Input
(Zo = 75 Ohms)
Return Loss — Output
(Zo = 75 Ohms)
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
IRL
40- 80 MHz
80- 320 MHz
320- 640 MHz
640- 870 MHz
dB
ORL
40- 80 MHz
80- 240 MHz
240- 640 MHz
640- 870 MHz
dB
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
Document Number: MHW8342N
Rev. 3, 5/2006
MHW8342N
1
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Symbol
Min
Typ
Max
79- Channel FLAT
112- Channel FLAT
132- Channel FLAT
CSO79
CSO112
CSO132
—
—
—
- 65
- 55
- 48
- 60
- 50
- 44
Cross Modulation Distortion
(Vout = +44 dBmV, FM = 55.25 MHz)
(Vout = +44 dBmV, FM = 55.25 MHz)
(Vout = +44 dBmV, FM = 55.25 MHz)
79- Channel FLAT
112- Channel FLAT
132- Channel FLAT
XMD79
XMD112
XMD132
—
—
—
- 63
- 56
- 56
- 60
- 52
- 50
Composite Triple Beat
(Vout = + 44 dBmV/ch., Worst Case)
(Vout = + 44 dBmV/ch., Worst Case)
(Vout = + 44 dBmV/ch., Worst Case)
79- Channel FLAT
112- Channel FLAT
132- Channel FLAT
CTB79
CTB112
CTB132
—
—
—
- 64
- 54
- 50
- 62
- 51
- 46
NF
—
—
—
3.5
4.5
5.5
4.5
—
6.5
dB
IDC
310
325
350
mA
Noise Figure
LIFETIME BUY
DC Current
Unit
dBc
dBc
dBc
50 MHz
550 MHz
870 MHz
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
Characteristic
Composite Second Order
(Vout = + 44 dBmV/ch., Worst Case)
(Vout = + 44 dBmV/ch., Worst Case)
(Vout = + 44 dBmV/ch., Worst Case)
MHW8342N
2
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
S
B
A
Z
0.010
M
T F
M
A
M
V
J
F
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
Q
2X
R
F
2X 6−32UNC−2B
L
2X
0.010
U
Z T A
M
M
E
1 2
3
5
7 8 9
C
N
K
E
4X
2X
0.010
M
Z T A
G
7X
P
D
0.020
Y
INCHES
MIN
MAX
−−−
1.775
−−−
1.085
−−−
0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−−
0.600
1.500 BSC
0.200 BSC
−−−
0.250
0.435
−−−
0.400 BSC
0.152
0.163
0.009
0.011
MILLIMETERS
MIN
MAX
−−− 45.085
−−− 27.559
−−− 21.336
0.381
0.533
11.811 12.954
7.62
8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759
4.267
−−−
15.24
38.100 BSC
5.080 BSC
−−−
6.350
11.049
−−−
10.160 BSC
3.861
4.140
0.229
0.279
Z
X
T
W
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
X
M
T A
M
X
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF INPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF OUTPUT
CASE 1302 - 01
ISSUE E
MHW8342N
RF Device Data
Freescale Semiconductor
3
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MHW8342N
Document Number: MHW8342N
4Rev. 3, 5/2006
RF Device Data
Freescale Semiconductor