1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Low reverse current: IR = 5µA (Max.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation Junction temperature IO 100 mA IFSM 1 A P* 100 mW Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C * 0.07 M A 1.0±0.05 • 0.1 Low forward voltage: VF (3) = 0.56V (typ.) 0.8±0.05 • A 0.2 ±0.05 0.1±0.05 0.1 Small package CATHODE MARK • +0.02 0.48 -0.03 fSC JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.6mg(typ.) Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit VF (1) ― VF (2) Min Typ. Max IF = 1mA ― 0.28 ― ― IF = 10mA ― 0.36 ― VF (3) ― IF = 50mA ― 0.56 0.62 Reverse current IR ― VR = 40V ― ― 5 µA Total capacitance CT ― VR = 0, f = 1MHz ― 15 ― pF Forward voltage Test Condition quivalent Circuit (Top View) Unit V Marking X 1 2004-05-26 1SS417 IR - VR IF - VF 100u 100 100 Ta=100°C 75 50 1u1 10 REVERSE逆電流 IR CURRENT IR(A) (A) FORWARD CURRENT IF(mA) 順電流 ＩＦ （ｍＡ） 10u 10 Ta=100°C 25 -25 1 25 100n 0 0 10n0 1n0 -25 0 100p 10p0 0.1 0 0.2 0.4 0.6 0 0.8 順電圧 ＶＦ （Ｖ） FORWORD VOLTAGE VF(V) 10 20 30 逆電圧 VR (V) VR(V) REVERSE VOLTAGE 40 CT - VR 100 Mounted on a glass epoxy circuit board of 20 x 20mm, pad dimension 4 x 4mm. TOTAL CAPACITANCE CT(pF) Ta=25°C f=1MHz 10 1 0.1 0 10 20 30 40 REVERSE VOLTAGE VR(V) 2 2004-05-26 1SS417 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2004-05-26