TDS.13.. Vishay Semiconductors High Intensity 13 mm Seven Segment Display Color High intensity red Low current red Type TDSR135. TDSR136. Circuitry Common anode Common cathode Description This series defines a new standard for Low Current Displays. It is a single digit 7–Segment LED display utilizing AllnGaP technology in color red. The supreme light intensity allows applications under direct sunlight or ”black front” designs by using tinted filter glass in front of the display. Typical 750 mcd at 0.5 mA is Best in Class Performance for applications with very limited power supply. The maximum forward current of 10 mA is allowed for an ambient temperature range of – 40° to +85° C without current derating. Crosstalk between segments is possible at drive currents above 5 mA per segment. Therefore it is recommend to apply more than 5 mA only under direct sunlight or with tinted filter glass. Applications Features D D D D D D 96 11508 750 mcd typical at 0.5 mA Battery driven instruments Telecom devices Home appliances Instrumentation POS Terminals 33000 mcd typical at 10 mA Very low power consumption Wide viewing angle Grey package surface Light intensity categorized at IF= 0.5mA Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified TDS.13.. Parameter Reverse voltage per segment DC forward current per segment Peak forward current per segment Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance LED junction/ambient Document Number 83141 Rev. A2, 05-Oct-00 Test Conditions Symbol VR IF tp ≤ 10 ms, duty cycle 1/10 IFM Tamb ≤ 85°C PV Tj Tamb Tstg t ≤ 3 sec, 2mm below seating plane Tsd RthJA Value 5 10 50 185 105 –40 to + 85 –40 to + 85 260 100 Unit V mA mA mW °C °C °C °C K/W www.vishay.com 1 (5) TDS.13.. Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Red (TDSR135., TDSR136. ) Parameter Luminous intensity y per segment g (digit average) 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage g per segment g Type Symbol IV IV IV ld lp ϕ VF VF VR Cj IF = 0.5 mA IF = 10 mA IR = 10 mA VR = 0, f = 1 MHz Reverse voltage per segment Junction capacitance Note1) : Test Conditions IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 0.5 mA IF = 0.5 mA Min 280 618 6 Typ 750 2000 33000 624 632 ±50 1.7 1.9 20 30 Max 2200 630 2.0 Unit mcd mcd mcd nm nm deg V V V pF IVmin and IV groups are mean values of segments a to g matching factor within segments is ≤ 1/2, without Decimal Point. Typical Characteristics (Tamb = 25_C, unless otherwise specified) 30 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 500 400 300 200 185 100 25 20 15 10 5 0 0 0 16117 20 40 60 80 85 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 (5) 0 16118 20 40 60 80 85 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 83141 Rev. A2, 05-Oct-00 TDS.13.. Vishay Semiconductors 10 ° 20 ° 1.6 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° I Vrel– Relative Luminous Intensity Iv rel – Relative Luminous Intensity 0° Red IF = 0.5 mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.6 0.4 0.2 0 0.2 0.4 0.6 0 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Figure 3. Rel. Luminous Intensity vs. Angular Displacement 1.2 I Vrel– Relative Luminous Intensity 100 I F – Forward Current ( mA ) 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 16119 95 10082 10 1 1 1.5 2.0 2.5 16488 Figure 4. Forward Current vs. Forward Voltage IF = 10 mA 0.8 0.6 0.4 0.2 0 560 3.0 VF – Forward Voltage ( V ) 95 10878 Red 1.0 580 600 620 640 660 680 l – Wavelength ( nm ) Figure 7. Rel. Luminous Intensity vs. Ambient Temperature I Vrel– Relative Luminous Intensity 100.0 Red 10.0 1.0 0.1 0.1 16120 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure 5. Rel. Luminous Intensity vs. Forward Current Document Number 83141 Rev. A2, 05-Oct-00 www.vishay.com 3 (5) TDS.13.. Vishay Semiconductors Pin connections 10 9 8 7 6 a f b g e c DP d 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 e d A (K) c DP b a A (K) f g 95 10896 Dimensions in mm 95 11344 www.vishay.com 4 (5) Document Number 83141 Rev. A2, 05-Oct-00 TDS.13.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83141 Rev. A2, 05-Oct-00 www.vishay.com 5 (5)