TOSHIBA MP4025_07

MP4025
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4025
Industrial Applications
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive
Load Switching
•
Unit: mm
Small package by full molding (SIP 10 pins)
•
Built-in resistance (RB).
•
Surge voltage is clamped by zener diode (C-B).
•
Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V)
•
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
6
V
JEDEC
―
VB
20
V
JEITA
―
DC
IC
1.5
ICP
2.0
A
TOSHIBA
Pulse
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(4-device operation)
PT
4.0
W
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Input voltage
Collector current
Storage temperature range
2-25A1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
2
3
4
5
6
7
8
9
RB
1
10
R1 R2
RB ≈ 3.6 kΩ, R1 ≈ 5 kΩ, R2 ≈ 300 Ω
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2006-10-27
MP4025
Marking
MP4025
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Thermal Characteristics
Characteristic
Thermal resistance from junction to ambient (4-device operation, Ta = 25°C)
Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s)
Symbol
Max
Unit
ΣRth (j-a)
31.3
°C/W
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0
⎯
⎯
10
μA
Collector cut-off current
ICEO
VCE = 45 V, IB = 0
⎯
⎯
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.46
⎯
1.25
mA
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
2.5
3.6
4.7
kΩ
2000
⎯
⎯
⎯
Collector-emitter breakdown voltage
Resistance
RB
⎯
DC current gain
hFE
VCE = 2 V, IC = 0.7 A
Input voltage (low)
VCE (sat) (1)
IC = 0.5 A, VBH = 4.2 V
⎯
⎯
1.2
VCE (sat) (2)
IC = 0.7 A, VBH = 9 V
⎯
⎯
1.5
VCE = 30 V, IC = 100 μA
⎯
⎯
0.7
⎯
0.3
⎯
⎯
4.0
⎯
⎯
0.6
⎯
VBL
Turn-on time
ton
Input
Switching time
Storage time
20 μs
tstg
0
Fall time
VBH = 5 V
tf
2
V
V
34 Ω
Collector-emitter saturation voltage
μs
VCC ∼
− 24 V
Duty cycle <
= 1%
2006-10-27
MP4025
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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