SHD116268 SHD116268B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 864, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Very Low Forward Voltage Drop High Efficiency High Frequency Application Guard Ring for Enhanced Durability and Long Term Reliability MAXIMUM RATINGS ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MAX. UNITS PIV 15 Volts IO 15 Amps MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT (t=8.3ms, Sine) IFSM 280 Amps MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode) RθJC 0.85 °C/W MAXIMUM OPERATING TEMPERATURE RANGE Top -55 to + 100 °C MAXIMUM STORAGE TEMPERATURE RANGE Tstg -55 to + 100 °C SYMBOL MAX. UNITS Vf 0.37 0.33 Volts Ir 7.0 340 mA CT 1200 pF PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC=70 OC) ELECTRICAL CHARACTERISTICS CHARACTERISTIC MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 15 Amps) TJ = 25 °C TJ = 75 °C MAXIMUM REVERSE CURRENT (Ir @ 15V PIV) TJ = 25 °C TJ = 100 °C MAXIMUM JUNCTION CAPACITANCE (Vr =5V) • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - [email protected] • SHD116268 SHD116268B SENSITRON TECHNICAL DATA DATA SHEET 864, REV. B MECHANICAL DIMENSIONS: In Inches / mm SHD-1B SHD-1 .375±.020 (9.52±.508) .225±.010 (5.71±.254) .225±.010 (5.71±.254) .225±.010 (5.71±.254) .150±.010 (3.81±.254) .225±.010 (5.71±.254) .015±.005 (.381±.127) Copper Anode .090 (2.29) Max .020±.005 R (.508±.127 ) Alumina Ring .075 (1.91) M ax M oly Lid Moly Base (Cathode) Alumina R ing .015±.002 (.381±.051) .060±.010 (1.52±.254) M oly Base DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - [email protected] • SHD116268 SHD116268B SENSITRON TECHNICAL DATA DATA SHEET 864, REV. B Note: The Vf curves are for bare die only. Typical Reverse Characteristics Typical Forward Characteristics 2 10 Instantaneous Reverse Current -RI (mA) 101 100 75°C 101 75 °C 50 °C 0 10 25 °C 10-1 0 2 25 °C 10-1 Junction Capacitance - CT (pF) Instantaneous Forward Current F- I(A) 100 °C 100 °C 10-2 0.0 0.1 0.2 0.3 Forward Voltage Drop - VF (V) 0.4 4 6 8 10 12 Reverse Voltage - VR (V) 14 16 Typical Junction Capacitance 600 550 500 25 °C 450 400 350 300 2 4 6 8 10 12 14 Reverse Voltage - VR (V) • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - [email protected] • 16