SHD117034P/N SHD117034AP/N SHD117034BP/N SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 413, REV. PRELIMINARY SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200C Operating Temperature Add Suffix "S" to Part Number for S-100 Screening. Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy (per leg) Repetitive Avalanche Current (per leg) Symbol VRWM IF(AV) IFSM EAS IAR Maximum Thermal Resistance (Junction to Mounting Surface) R Maximum Thermal Resistance (Junction to Mounting Surface) Max. Junction Temperature Max. Storage Temperature R JC JC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave Max. 100 6.0 Units V A 55 A TJ = 25 C, IAS = 0.23A, L = 130 mH IAS decay linearly to 0 in 1 ms limited by TJ max VA=1.5VR Common Cathode 3.5 mJ 0.23 A 1.8 C/W Common Anode 4.2 C/W - -65 to +200 -65 to +175 C C Max. 0.84 0.68 5.0 Units V V mA 0.25 mA 100 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) CT Condition @ 3A, Pulse, TJ = 25 C @ 3A, Pulse, TJ = 125 C @VR = 100V, Pulse, TJ = 25 C @VR = 100V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - [email protected] SHD117034P/N SHD117034AP/N SHD117034BP/N TECHNICAL DATA DATA SHEET 413, REV. PRELIMINARY Mechanical Dimensions: In Inches / mm .290±.010 (7.37±.254) .440±.020 (11.2±.508) .440±.020 (11.2±.508) .290±.010 (7.37±.254) 2 .065±.010 (1.65±.254) .020±.010 (.508±.254) .290±.010 (7.37±.254) .090±.010 (2.29±.254) 2 .350±.010 (8.89±.254) 3 .020±.010 (.508±.254) .185±.010 (4.70±.254) .350±.010 (8.89±.254) .110 (2.80) Max 2 .020±.010 (.508±.254) 3 .185±.010 (4.70±.254) .350±.010 (8.89±.254) 3 Alumina Ring Terminal 1 SHD-4 COMMON CATHODE .110 (2.79) Max Moly Lid Copper Terminals .020±.005 R (.508±.127 ) .130 (3.30) Max Alumina Ring COMMON ANODE .020±.002 (.508±.051) Moly Base Terminal 1 Moly Base Terminal 1 .060±.010 (1.52±.254) 3 2 1 PINOUT TABLE DEVICE TYPE DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) SHD-4B PIN 1 COMMON CATHODE COMMON ANODE Typical Forward Characteristics PIN 2 ANODE 1 CATHODE 1 PIN 3 ANODE 2 CATHODE 2 Typical Reverse Characteristics Instantaneous Reverse Current - IR (mA) 101 200 °C Instantaneous Forward Current - IF (A) 100 175 °C 125 °C -1 10 200°C 100 175 °C 150 °C -1 10 125 °C 10-2 100 °C 75 °C 10-3 50 °C 10-4 25 °C -5 10 0 10 -3 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 20 40 60 80 100 Reverse Voltage - VR (V) 120 Typical Junction Capacitance 25 °C -2 0.8 .015±.002 (.381±.051) .060±.010 (1.52±.254) 3 Junction Capacitance - CT (pF) 1 .020±.005 (.508±.127 ) Alumina Ring SHD-4A 2 Moly Lid 90 80 70 60 50 40 30 20 10 0 20 40 60 80 Reverse Voltage - VR (V) 100 120 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - [email protected] SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] •