NUMONYX M29W640FB

M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Feature summary
■
Supply voltage
– VCC = 2.7V to 3.6V for Program, Erase,
Read
– VPP =12 V for Fast Program (optional)
■
Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
■
135 Memory Blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom location)
– 127 Main Blocks, 64 KBytes each
■
Program/Erase Controller
– Embedded Byte/Word Program algorithms
■
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■
Unlock Bypass Program command
– Faster Production/Batch Programming
■
VPP/WP pin for Fast Program and Write Protect
■
Temporary Block Unprotection mode
■
Common Flash Interface
– 64-bit Security Code
Table 1.
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6x8mm
■
Extended Memory Block
■
Extra block used as security block or to store
additional information
■
Low power consumption
– Standby and Automatic Standby
■
100,000 Program/Erase cycles per block
■
Electronic Signature
– Manufacturer Code: 0020h
■
ECOPACK® packages
Device Codes
December 2007
Root Part Number
Device Code
M29W640FT
22EDh
M29W640FB
22FDh
Rev 7
1/71
www.numonyx.com
1
Contents
M29W640FT, M29W640FB
Contents
1
Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
2.1
Address Inputs (A0-A21) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.2
Data Inputs/Outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.3
Data Inputs/Outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.4
Data Input/Output or Address Input (DQ15A–1) . . . . . . . . . . . . . . . . . . . 11
2.5
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.6
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.7
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.8
VPP/Write Protect (VPP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.9
Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.10
Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.11
Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.12
VCC Supply Voltage (2.7V to 3.6V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.13
VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1
Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2
Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.5
Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6
Special Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.2
Block Protect and Chip Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1
2/71
3.6.1
Standard commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1.1
Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1.2
Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1.3
Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
M29W640FT, M29W640FB
4.2
4.3
5
Contents
4.1.4
Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.1.5
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1.6
Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1.7
Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1.8
Program Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1.9
Program Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1.10
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Fast Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.2.1
Double Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.2.2
Quadruple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.2.3
Octuple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.2.4
Double Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.2.5
Quadruple Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4.2.6
Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4.2.7
Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4.2.8
Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Block Protection commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3.1
Enter Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3.2
Exit Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3.3
Block Protect and Chip Unprotect commands . . . . . . . . . . . . . . . . . . . . 26
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.1
Data Polling Bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.2
Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.3
Error Bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.4
Erase Timer Bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.5
Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
7
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
9
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Appendix A Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3/71
Contents
M29W640FT, M29W640FB
Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
C.1
Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
C.2
Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Appendix D Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
D.1
Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
D.2
In-System technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
4/71
M29W640FT, M29W640FB
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Device Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Hardware protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Bus operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Commands, 8-bit mode, BYTE = VIL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Program, Erase times and Program, Erase Endurance cycles. . . . . . . . . . . . . . . . . . . . . . 29
Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Write AC characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Write AC characteristics, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Reset/Block Temporary Unprotect AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package mechanical data . . . 44
TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data . . . . . . 45
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Top Boot Block addresses, M29W640FT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Bottom Boot Block addresses, M29W640FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Primary Algorithm-specific Extended Query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Security Code Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Extended Block address and data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Programmer technique bus operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5/71
List of figures
M29W640FT, M29W640FB
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
6/71
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
TFBGA48 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data Polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Data Toggle flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
AC measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Read Mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Page Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Write AC waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Write AC waveforms, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Reset/Block Temporary Unprotect AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Accelerated Program Timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, top view package outline . . . . 44
TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline . . . . . . . . . . . . . . 45
Programmer Equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Programmer Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
In-System Equipment Group Protect flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
In-System Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
M29W640FT, M29W640FB
1
Summary description
Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte
(generally groups of four 64 KByte blocks), to prevent accidental Program or Erase
commands from modifying the memory. Program and Erase commands are written to the
Command Interface of the memory. An on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by taking care of all of the special
operations that are required to update the memory contents. The end of a program or erase
operation can be detected and any error conditions identified. The command set required to
control the memory is consistent with JEDEC standards.
The device features an asymmetrical blocked architecture. The device has an array of 135
blocks:
●
8 Parameters Blocks of 8 KBytes each (or 4 KWords each)
●
127 Main Blocks of 64 KBytes each (or 32 KWords each)
M29W640FT has the Parameter Blocks at the top of the memory address space while the
M29W640FB locates the Parameter Blocks starting from the bottom.
The M29W640F has an extra block, the Extended Block, of 128 Words in x16 mode or of
256 Byte in x8 mode that can be accessed using a dedicated command. The Extended
Block can be protected and so is useful for storing security information. However the
protection is not reversible, once protected the protection cannot be undone.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The VPP/WP signal is used to enable faster programming of the device, enabling multiple
word/byte programming. If this signal is held at VSS, the boot block, and its adjacent
parameter block, are protected from program and erase operations.
The device supports Asynchronous Random Read and Page Read from all blocks of the
memory array.
The memories are offered in TSOP48 (12x 20mm) and TFBGA48 (6x8mm, 0.8mm pitch)
packages.
In order to meet environmental requirements, ST offers the M29W640FT and the
M29W640FB in ECOPACK® packages. ECOPACK packages are Lead-free. The category of
second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
The memory is delivered with all the bits erased (set to 1).
7/71
Summary description
Figure 1.
M29W640FT, M29W640FB
Logic diagram
VCC VPP/WP
22
15
A0-A21
DQ0-DQ14
DQ15A–1
W
E
M29W640FT
M29W640FB
G
BYTE
RB
RP
VSS
AI11250
Table 2.
8/71
Signal names
A0-A21
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1 (or DQ15)
Data Input/Output or Address Input (or Data Input/Output)
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply voltage
VPP/WP
Supply voltage for Fast Program (optional) or Write Protect
VSS
Ground
NC
Not Connected Internally
M29W640FT, M29W640FB
Figure 2.
Summary description
TSOP connections
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
W
RP
A21
VPP/WP
RB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
48
M29W640FT
M29W640FB
12
13
37
36
24
25
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
AI11251
9/71
Summary description
Figure 3.
M29W640FT, M29W640FB
TFBGA48 connections (top view through package)
1
2
3
4
5
6
A
A3
A7
RB
W
A9
A13
B
A4
A17
VPP/WP
RP
A8
A12
C
A2
A6
A18
A21
A10
A14
D
A1
A5
A20
A19
A11
A15
E
A0
DQ0
DQ2
DQ5
DQ7
A16
F
E
DQ8
DQ10
DQ12
DQ14
BYTE
G
G
DQ9
DQ11
VCC
DQ13
DQ15
A–1
H
VSS
DQ1
DQ3
DQ4
DQ6
VSS
AI11554
10/71
M29W640FT, M29W640FB
2
Signal descriptions
Signal descriptions
See Figure 1: Logic diagram, and Table 2: Signal names, for a brief overview of the signals
connected to this device.
2.1
Address Inputs (A0-A21)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the Program/Erase Controller.
2.2
Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the Program/Erase Controller.
2.3
Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4
Data Input/Output or Address Input (DQ15A–1)
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the addressed Word, DQ15A–1 High will select the MSB. Throughout the text
consider references to the Data Input/Output to include this pin when BYTE is High and
references to the Address Inputs to include this pin when BYTE is Low except when stated
explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
11/71
Signal descriptions
2.7
M29W640FT, M29W640FB
Write Enable (W)
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.
2.8
VPP/Write Protect (VPP/WP)
The VPP/Write Protect pin provides two functions. The VPP function allows the memory to
use an external high voltage power supply to reduce the time required for Unlock Bypass
Program operations. The Write Protect function provides a hardware method of protecting
the two outermost boot blocks. The VPP/Write Protect pin must not be left floating or
unconnected.
When VPP/Write Protect is Low, VIL, the memory protects the two outermost boot blocks;
Program and Erase operations in this block are ignored while VPP/Write Protect is Low, even
when RP is at VID.
When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status
of the two outermost boot blocks. Program and Erase operations can now modify the data in
the two outermost boot blocks unless the block is protected using Block Protection.
Applying VPPH to the VPP/WP pin will temporarily unprotect any block previously protected
(including the two outermost parameter blocks) using a High Voltage Block Protection
technique (In-System or Programmer technique). See Table 3: Hardware protection for
details.
When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock
Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes.
During Unlock Bypass Program operations the memory draws IPP from the pin to supply the
programming circuits. See the description of the Unlock Bypass command in the Command
Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than
tVHVPP, see Figure 13: Accelerated Program Timing waveforms.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
A 0.1µF capacitor should be connected between the VPP/Write Protect pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Unlock Bypass Program, IPP.
Table 3.
VPP/WP
RP
Function
VIH
2 outermost parameter blocks protected from Program/Erase operations
VID
All blocks temporarily unprotected except the 2 outermost blocks
VIH or VID
VID
All blocks temporarily unprotected
VPPH
VIH or VID
All blocks temporarily unprotected
VIL
12/71
Hardware protection
M29W640FT, M29W640FB
2.9
Signal descriptions
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
Note that if VPP/WP is at VIL, then the two outermost boot blocks will remain protected even
if RP is at VID.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.
See the Ready/Busy Output section, Table 17: Reset/Block Temporary Unprotect AC
characteristics and Figure 12: Reset/Block Temporary Unprotect AC waveforms, for more
details.
Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.
2.10
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or Erase operation. During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and
Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table 17: Reset/Block Temporary Unprotect AC
characteristics and Figure 12: Reset/Block Temporary Unprotect AC waveforms, for more
details.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11
Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in
x8 mode, when it is High, VIH, the memory is in x16 mode.
13/71
Signal descriptions
2.12
M29W640FT, M29W640FB
VCC Supply Voltage (2.7V to 3.6V)
VCC provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the VCC Supply voltage is less than the Lockout
Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1µF capacitor should be connected between the VCC Supply voltage pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Program and Erase operations, ICC3.
2.13
VSS Ground
VSS is the reference for all voltage measurements. The device features two VSS pins which
must be both connected to the system ground.
14/71
M29W640FT, M29W640FB
3
Bus operations
Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See Table 4: Bus operations, BYTE
= VIL and Table 5: Bus operations, BYTE = VIH, for a summary. Typically glitches of less than
5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus
operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 8: Read Mode
AC waveforms, and Table 14: Read AC characteristics, for details of when the output
becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. To speed up the read operation the
memory array can be read in Page mode where data is internally read and stored in a page
buffer. The Page has a size of 4 Words and is addressed by the address inputs A0-A1.
A valid Bus Write operation begins by setting the desired address on the Address Inputs.
The Address Inputs are latched by the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the
Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs
first. Output Enable must remain High, VIH, during the whole Bus Write operation. See
Figure 10: Write AC waveforms, Write Enable controlled, Figure 11: Write AC waveforms,
Chip Enable controlled, and Table 15: Write AC characteristics, Write Enable controlled and
Table 16: Write AC characteristics, Chip Enable controlled, for details of the timing
requirements.
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4
Standby
When Chip Enable is High, VIH, the memory enters Standby mode and the Data
Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to
the Standby Supply Current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the
Standby current level see Table 13: DC characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC3, for Program or Erase operations until the operation completes.
15/71
Bus operations
3.5
M29W640FT, M29W640FB
Automatic Standby
If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
3.6
Special Bus operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.6.1
Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 4:
Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH.
3.6.2
Block Protect and Chip Unprotect
Groups of blocks can be protected against accidental Program or Erase. The Protection
Groups are shown in Appendix A: Block addresses Table 21 and Table 22. The whole chip
can be unprotected to allow the data inside the blocks to be changed.
The VPP/Write Protect pin can be used to protect the two outermost boot blocks. When
VPP/Write Protect is at VIL the two outermost boot blocks are protected and remain
protected regardless of the Block Protection Status or the Reset/Block Temporary
Unprotect pin status.
Block Protect and Chip Unprotect operations are described in Appendix D: Block protection.
16/71
M29W640FT, M29W640FB
Table 4.
Bus operations
Bus operations, BYTE = VIL (1)
Operation
E
G
Address Inputs
DQ15A–1, A0-A21
W
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
VIH Cell address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL Command address
Hi-Z
Data Input
X
VIH
VIH X
Hi-Z
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer Code
VIL
VIL
VIH
A0-A3 = VIL, A6 = VIL,
A9 = VID, Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIL
A0 = VIH, A1-A3= VIL,
VIH A6 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
EDh (M29W640FT)
FDh (M29W640FB)
Read Extended Memory
Block Verify Code
VIL
VIL
A0 -A1 = VIH, A2-A3= VIL,
VIH A6 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
80h (Factory Locked)
00h (Customer Lockable)
VIL
A0,A2,A3, A6= VIL,
A1= VIH, A9 = VID,
VIH
A12-A21 = Block address,
Others VIL or VIH
Hi-Z
01h (protected)
00h (unprotected)
Output Disable
Read Block Protection
Status
VIL
1. X = VIL or VIH.
Table 5.
Bus operations, BYTE = VIH(1)
Operation
Address Inputs
A0-A21
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
E
G
W
Bus Read
VIL
VIL
VIH
Cell address
Bus Write
VIL
VIH
VIL
Command address
X
VIH
VIH
X
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Read Manufacturer Code
VIL
VIL
VIH
A0-A3 = VIL, A6 = VIL,
A9 = VID, Others VIL or VIH
Read Device Code
VIL
VIL
VIH
A0 = VIH, A1-A3= VIL, A6 = VIL,
A9 = VID, Others VIL or VIH
Read Extended Memory
Block Verify Code
VIL
VIL
VIH
A0 -A1 = VIH, A2-A3= VIL,
A6 = VIL, A9 = VID,
Others VIL or VIH
Read Block Protection
Status
VIL
VIL
VIH
A0,A2,A3, A6= VIL, A1 = VIH, A9 = VID,
A12-A21 = Block address,
Others VIL or VIH
Output Disable
Data Output
Data Input
0020h
22EDh (M29W640FT)
22FDh (M29W640FB)
80h (Factory Locked)
00h (Customer Lockable)
0001h (protected)
0000h (unprotected)
1. X = VIL or VIH.
17/71
Command interface
4
M29W640FT, M29W640FB
Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16bit or 8-bit mode. See either Table 6, or Table 7, depending on the configuration that is being
used, for a summary of the commands.
4.1
Standard commands
4.1.1
Read/Reset command
The Read/Reset command returns the memory to its Read mode. It also resets the errors in
the Status Register. Either one or three Bus Write operations can be used to issue the
Read/Reset command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to read mode. If the Read/Reset command
is issued during the timeout of a Block Erase operation then the memory will take up to 10µs
to abort. During the abort period no valid data can be read from the memory. The
Read/Reset command will not abort an Erase operation when issued while in Erase
Suspend.
4.1.2
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code, the
Block Protection Status and the Extended Memory Block Verify Code. Three consecutive
Bus Write operations are required to issue the Auto Select command. Once the Auto Select
command is issued the memory remains in Auto Select mode until a Read/Reset command
is issued. Read CFI Query and Read/Reset commands are accepted in Auto Select mode,
all other commands are ignored.
In Auto Select mode, the Manufacturer Code and the Device Code can be read by using a
Bus Read operation with addresses and control signals set as shown in Table 4: Bus
operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH, except for A9 that is ‘Don’t
Care’.
The Block Protection Status of each block can be read using a Bus Read operation with
addresses and control signals set as shown in Table 4: Bus operations, BYTE = VIL and
Table 5: Bus operations, BYTE = VIH, except for A9 that is ‘Don’t Care’. If the addressed
block is protected then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is
output (in 8-bit mode).
The protection status of the Extended Memory block, or Extended Memory Block Verify
code, can be read using a Bus Read operation with addresses and control signals set as
shown in Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH,
except for A9 that is ‘Don’t Care’. If the Extended Block is "Factory Locked" then 80h is
output on Data Input/Outputs DQ0-DQ7, otherwise 00h is output (8-bit mode).
18/71
M29W640FT, M29W640FB
4.1.3
Command interface
Read CFI Query command
The Read CFI Query Command is used to read data from the Common Flash Interface
(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or
when the device is in Autoselected mode.
One Bus Write cycle is required to issue the Read CFI Query Command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
Interface Memory Area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Autoselected mode). A second Read/Reset command would be
needed if the device is to be put in the Read Array mode from Autoselected mode.
See Appendix B: Common Flash Interface (CFI), Tables 23, 24, 25, 26, 27 and 28 for details
on the information contained in the Common Flash Interface (CFI) memory area.
4.1.4
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations
are required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the Chip Erase operation appears to start but will terminate
within about 100µs, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands, including the Erase
Suspend command. It is not possible to issue any command to abort the operation. Typical
chip erase times are given in Table 8: Program, Erase times and Program, Erase Endurance
cycles. All Bus Read operations during the Chip Erase operation will output the Status
Register on the Data Inputs/Outputs. See the section on the Status Register for more
details.
After the Chip Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read Mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
19/71
Command interface
4.1.5
M29W640FT, M29W640FB
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write
operations are required to select the first block in the list. Each additional block in the list can
be selected by repeating the sixth Bus Write operation using the address of the additional
block. The Block Erase operation starts the Program/Erase Controller about 50µs after the
last Bus Write operation. Once the Program/Erase Controller starts it is not possible to
select any more blocks. Each additional block must therefore be selected within 50µs of the
last block. The 50µs timer restarts when an additional block is selected. The Status Register
can be read after the sixth Bus Write operation. See the Status Register section for details
on how to identify if the Program/Erase Controller has started the Block Erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the Block Erase operation appears to
start but will terminate within about 100µs, leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command. Typical block erase times are given in Table 8: Program, Erase times
and Program, Erase Endurance cycles. All Bus Read operations during the Block Erase
operation will output the Status Register on the Data Inputs/Outputs. See the section on the
Status Register for more details.
After the Block Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the selected blocks is lost.
4.1.6
Erase Suspend command
The Erase Suspend Command may be used to temporarily suspend a Block Erase
operation and return the memory to Read mode. The command requires one Bus Write
operation.
The Program/Erase Controller will suspend within the Erase Suspend Latency time of the
Erase Suspend Command being issued. Once the Program/Erase Controller has stopped
the memory will be set to Read mode and the Erase will be suspended. If the Erase
Suspend command is issued during the period when the memory is waiting for an additional
block (before the Program/Erase Controller starts) then the Erase is suspended immediately
and will start immediately when the Erase Resume Command is issued. It is not possible to
select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
20/71
M29W640FT, M29W640FB
4.1.7
Command interface
Erase Resume command
The Erase Resume command must be used to restart the Program/Erase Controller after an
Erase Suspend. The device must be in Read Array mode before the Resume command will
be accepted. An erase can be suspended and resumed more than once.
4.1.8
Program Suspend command
The Program Suspend command allows the system to interrupt a program operation so that
data can be read from any block. When the Program Suspend command is issued during a
program operation, the device suspends the program operation within the Program Suspend
Latency time (see Table 8: Program, Erase times and Program, Erase Endurance cycles for
value) and updates the Status Register bits.
After the program operation has been suspended, the system can read array data from any
address. However, data read from Program-Suspended addresses is not valid.
The Program Suspend command may also be issued during a program operation while an
erase is suspended. In this case, data may be read from any addresses not in Erase
Suspend or Program Suspend. If a read is needed from the Extended Block area (One-time
Program area), the user must use the proper command sequences to enter and exit this
region.
The system may also issue the Auto Select command sequence when the device is in the
Program Suspend mode. The system can read as many Auto Select codes as required.
When the device exits the Auto Select mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See Auto Select command sequence for
more information.
4.1.9
Program Resume command
After the Program Resume command is issued, the device reverts to programming. The
controller can determine the status of the program operation using the DQ7 or DQ6 status
bits, just as in the standard program operation. See Write Operation Status for more
information.
The system must write the Program Resume command, to exit the Program Suspend mode
and to continue the programming operation.
Further issuing of the Resume command is ignored. Another Program Suspend command
can be written after the device has resumed programming.
21/71
Command interface
4.1.10
M29W640FT, M29W640FB
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final write operation latches
the address and data, and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend
command and a Program Resume command, respectively (see Section 4.1.8: Program
Suspend command and Section 4.1.9: Program Resume command).
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
Table 8: Program, Erase times and Program, Erase Endurance cycles. Bus Read operations
during the program operation will output the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more details.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
22/71
M29W640FT, M29W640FB
4.2
Command interface
Fast Program commands
There are four Fast Program commands available to improve the programming throughput,
by writing several adjacent words or bytes in parallel. The Double, Quadruple and Octuple
Byte Program commands are available for x8 operations, while the Double Quadruple Word
Program command are available for x16 operations.
Fast Program commands can be suspended and then resumed by issuing a Program
Suspend command and a Program Resume command, respectively (see Section 4.1.8:
Program Suspend command and Section 4.1.9: Program Resume command).
When VPPH is applied to the VPP/Write Protect pin the memory automatically enters the Fast
Program mode. The user can then choose to issue any of the Fast Program commands.
Care must be taken because applying a VPPH to the VPP/WP pin will temporarily unprotect
any protected block.
4.2.1
Double Byte Program command
The Double Byte Program command is used to write a page of two adjacent Bytes in
parallel. The two bytes must differ only in DQ15A-1. Three bus write cycles are necessary to
issue the Double Byte Program command.
4.2.2
1.
The first bus cycle sets up the Double Byte Program Command.
2.
The second bus cycle latches the Address and the Data of the first byte to be written.
3.
The third bus cycle latches the Address and the Data of the second byte to be written.
Quadruple Byte Program command
The Quadruple Byte Program command is used to write a page of four adjacent Bytes in
parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus write cycles
are necessary to issue the Quadruple Byte Program command.
1.
The first bus cycle sets up the Quadruple Byte Program Command.
2.
The second bus cycle latches the Address and the Data of the first byte to be written.
3.
The third bus cycle latches the Address and the Data of the second byte to be written.
4.
The fourth bus cycle latches the Address and the Data of the third byte to be written.
5.
The fifth bus cycle latches the Address and the Data of the fourth byte to be written and
starts the Program/Erase Controller.
23/71
Command interface
4.2.3
M29W640FT, M29W640FB
Octuple Byte Program command
This is used to write eight adjacent Bytes, in x8 mode, simultaneously. The addresses of the
eight Bytes must differ only in A1, A0 and DQ15A-1.
Nine bus write cycles are necessary to issue the command:
4.2.4
1.
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Byte to be written.
3.
The third bus cycle latches the Address and the Data of the second Byte to be written.
4.
The fourth bus cycle latches the Address and the Data of the third Byte to be written.
5.
The fifth bus cycle latches the Address and the Data of the fourth Byte to be written.
6.
The sixth bus cycle latches the Address and the Data of the fifth Byte to be written.
7.
The seventh bus cycle latches the Address and the Data of the sixth Byte to be written.
8.
The eighth bus cycle latches the Address and the Data of the seventh Byte to be
written.
9.
The ninth bus cycle latches the Address and the Data of the eighth Byte to be written
and starts the Program/Erase Controller.
Double Word Program command
The Double Word Program command is used to write a page of two adjacent Words in
parallel. The two Words must differ only for the address A0.
Three bus write cycles are necessary to issue the Double Word Program command.
●
The first bus cycle sets up the Quadruple Word Program Command.
●
The second bus cycle latches the Address and the Data of the first Word to be written.
●
The third bus cycle latches the Address and the Data of the second Word to be written
and starts the Program/Erase Controller.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs Bus Read operations will continue to output
the Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
Note that the Fast Program commands cannot change a bit set at ’0’ back to ’1’. One of the
Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’
to ’1’.
Typical Program times are given in Table 8: Program, Erase times and Program, Erase
Endurance cycles.
24/71
M29W640FT, M29W640FB
4.2.5
Command interface
Quadruple Word Program command
This is used to write a page of four adjacent Words (or 8 adjacent Bytes), in x16 mode,
simultaneously. The addresses of the four Words must differ only in A1 and A0.
Five bus write cycles are necessary to issue the command:
4.2.6
●
The first bus cycle sets up the command.
●
The second bus cycle latches the Address and the Data of the first Word to be written.
●
The third bus cycle latches the Address and the Data of the second Word to be written.
●
The fourth bus cycle latches the Address and the Data of the third Word to be written.
●
The fifth bus cycle latches the Address and the Data of the fourth Word to be written
and starts the Program/Erase Controller.
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory faster than with the standard program commands. When
the cycle time to the device is long, considerable time saving can be made by using these
commands. Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
When VPP is applied to the VPP/Write Protect pin the memory automatically enters the
Unlock Bypass mode and the Unlock Bypass Program command can be issued
immediately.
4.2.7
Unlock Bypass Program command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long, considerable
time saving can be made by using these commands. Three Bus Write operations are
required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the VPP/Write Protect pin.
When the system asserts VPP on the VPP/Write Protect pin, the memory automatically
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
program command sequence. The memory uses the higher voltage on the VPP/Write
Protect pin, to accelerate the Unlock Bypass Program operation.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
4.2.8
Unlock Bypass Reset command
The Unlock Bypass Reset command can be used to return to Read/Reset mode from
Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass
Reset command. Read/Reset command does not exit from Unlock Bypass Mode.
25/71
Command interface
4.3
Block Protection commands
4.3.1
Enter Extended Block command
M29W640FT, M29W640FB
The device has an extra 256 Byte block (Extended Block) that can only be accessed using
the Enter Extended Block command. Three Bus write cycles are required to issue the
Extended Block command. Once the command has been issued the device enters
Extended Block mode where all Bus Read or Write operations to the Boot Block addresses
access the Extended Block. The Extended Block (with the same address as the Boot
Blocks) cannot be erased, and can be treated as one-time programmable (OTP) memory. In
Extended Block mode the Boot Blocks are not accessible.
To exit from the Extended Block mode the Exit Extended Block command must be issued.
The Extended Block can be protected, however once protected the protection cannot be
undone.
4.3.2
Exit Extended Block command
The Exit Extended Block command is used to exit from the Extended Block mode and return
the device to Read mode. Four Bus Write operations are required to issue the command.
4.3.3
Block Protect and Chip Unprotect commands
Groups of blocks can be protected against accidental Program or Erase. The Protection
Groups are shown in Appendix A: Block addresses, Table 21: Top Boot Block addresses,
M29W640FT and Table 22: Bottom Boot Block addresses, M29W640FB. The whole chip
can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are described in Appendix D: Block protection.
26/71
M29W640FT, M29W640FB
Table 6.
Command interface
Commands, 16-bit mode, BYTE = VIH(1)
Command
Length
Bus Write operations
1st
2nd
3rd
Addr Data Addr Data
Addr
4th
5th
6th
Data Addr Data Addr Data Addr Data
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Program
4
555
AA
2AA
55
555
A0
Double Word Program
3
555
50
PA0
PD0
PA1
PD1
Quadruple Word
Program
5
555
56
PA0
PD0
PA1
PD1
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
Block Erase
6+
555
AA
2AA
55
Program/Erase
Suspend
1
X
B0
Program/Erase
Resume
1
X
30
Read CFI Query
1
55
98
Enter Extended Block
3
555
AA
2AA
Exit Extended Block
4
555
AA
2AA
Read/Reset
PA
PD
PA2
PD2
PA3
PD3
80
555
AA
2AA
55
555
10
555
80
555
AA
2AA
55
BA
30
55
555
88
55
555
90
X
00
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal. The Command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
27/71
Command interface
Command
Read/Reset
Commands, 8-bit mode, BYTE = VIL
Length
Table 7.
M29W640FT, M29W640FB
1
Bus Write operations(1)
1st
2nd
3rd
4th
5th
6th
7th
8th
9th
Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data
X
F0
3 AAA AA 555 55
X
F0
Auto Select
3 AAA AA 555 55 AAA 90
Program
4 AAA AA 555 55 AAA A0
Double Byte
Program
3 AAA 50 PA0 PD0 PA1 PD1
Quadruple
Byte Program
5 AAA 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3
Octuple Byte
Program
9 AAA 8B PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 PA4 PD4 PA5 PD5 PA6 PD6 PA7 PD7
PA
PD
Unlock Bypass 3 AAA AA 555 55 AAA 20
Unlock Bypass
2
Program
X
A0
PA
PD
Unlock Bypass
2
Reset
X
90
X
00
Chip Erase
6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
Block Erase
6+ AAA AA 555 55 AAA 80 AAA AA 555 55
Program/Erase
1
Suspend
X
B0
Program/Erase
1
Resume
X
30
AA
98
Read CFI
Query
1
Enter
Extended
Block
3 AAA AA 555 55 AAA 88
Exit Extended
Block
4 AAA AA 555 55 AAA 90
X
BA
30
00
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
28/71
M29W640FT, M29W640FB
Table 8.
Command interface
Program, Erase times and Program, Erase Endurance cycles
Parameter
Min
Chip Erase
Block Erase (64 KBytes)
Typ(1)(2)
Max(2)
Unit
80
400(3)
s
0.8
Erase Suspend Latency time
(4)
s
6
50
(4)
µs
10
200(3)
µs
10
(3)
µs
10
(3)
200
µs
Quadruple Word / Octuple Byte Program
10
200(3)
µs
Chip Program (Byte by Byte)
80
400(3)
s
40
(3)
200
s
20
100(3)
s
Program (Byte or Word)
Double Byte
Double Word /Quadruple Byte Program
Chip Program (Word by Word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
10
Program Suspend Latency time
Program/Erase Cycles (per Block)
Data Retention
200
50
(3)
s
4
µs
100,000
cycles
20
years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
29/71
Status Register
5
M29W640FT, M29W640FB
Status Register
Bus Read operations from any address always read the Status Register during Program and
Erase operations. It is also read during Erase Suspend when an address within a block
being erased is accessed.
The bits in the Status Register are summarized in Table 9: Status Register Bits.
5.1
Data Polling Bit (DQ7)
The Data Polling Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Data
Polling Bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling Bit outputs the complement of the bit being
programmed to DQ7. After successful completion of the Program operation the memory
returns to Read mode and Bus Read operations from the address just programmed output
DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state
of DQ7. After successful completion of the Erase operation the memory returns to Read
Mode.
In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation
within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the
Program/Erase Controller has suspended the Erase operation.
Figure 4: Data Polling flowchart, gives an example of how to use the Data Polling Bit. A Valid
Address is the address being programmed or an address within the block being erased.
5.2
Toggle Bit (DQ6)
The Toggle Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle
Bit is output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations at any address. After successful completion of the
operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block
being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has
suspended the Erase operation.
Figure 5: Data Toggle flowchart, gives an example of how to use the Data Toggle Bit.
30/71
M29W640FT, M29W640FB
5.3
Status Register
Error Bit (DQ5)
The Error Bit can be used to identify errors detected by the Program/Erase Controller. The
Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the
correct data to the memory. If the Error Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit is output on DQ5 when the Status Register
is read.
Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to
do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
One of the Erase commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
5.4
Erase Timer Bit (DQ3)
The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation
during a Block Erase command. Once the Program/Erase Controller starts erasing the
Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit
is set to ’0’ and additional blocks to be erased may be written to the Command Interface.
The Erase Timer Bit is output on DQ3 when the Status Register is read.
5.5
Alternative Toggle Bit (DQ2)
The Alternative Toggle Bit can be used to monitor the Program/Erase controller during
Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is
read.
During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’,
etc., with successive Bus Read operations from addresses within the blocks being erased. A
protected block is treated the same as a block not being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with
successive Bus Read operations from addresses within the blocks being erased. Bus Read
operations to addresses within blocks not being erased will output the memory cell data as if
in Read mode.
After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be
used to identify which block or blocks have caused the error. The Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses
within blocks that have not erased correctly. The Alternative Toggle Bit does not change if
the addressed block has erased correctly.
31/71
Status Register
M29W640FT, M29W640FB
Table 9.
Status Register Bits(1)
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any address
DQ7
Toggle
0
–
–
0
Program During Erase
Suspend
Any address
DQ7
Toggle
0
–
–
0
Program Error
Any address
DQ7
Toggle
1
–
–
Hi-Z
Chip Erase
Any address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
No Toggle
0
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erasing Block
1
No Toggle
0
–
Toggle
Hi-Z
Block Erase
Erase Suspend
Non-Erasing Block
Data read as normal
Good Block address
0
Toggle
1
1
Faulty Block address
0
Toggle
1
1
Hi-Z
No Toggle Hi-Z
Erase Error
1. Unspecified data bits should be ignored.
Figure 4.
Data Polling flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
DATA
YES
NO
NO
DQ5
=1
YES
READ DQ7
at VALID ADDRESS
DQ7
=
DATA
YES
NO
FAIL
PASS
AI90194
32/71
Toggle
Hi-Z
M29W640FT, M29W640FB
Figure 5.
Status Register
Data Toggle flowchart
START
READ DQ6
READ
DQ5 & DQ6
DQ6
=
TOGGLE
NO
YES
NO
DQ5
=1
YES
READ DQ6
TWICE
DQ6
=
TOGGLE
NO
YES
FAIL
PASS
AI90195B
33/71
Maximum rating
6
M29W640FT, M29W640FB
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 10.
Absolute maximum ratings
Symbol
Parameter
Min
Max
Unit
TBIAS
Temperature under bias
–50
125
°C
TSTG
Storage temperature
–65
150
°C
–0.6
VCC +0.6
V
voltage(1)(2)
VIO
Input or Output
VCC
Supply voltage
–0.6
4
V
VID
Identification voltage
–0.6
13.5
V
Program voltage
–0.6
13.5
V
VPP(3)
1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.
3. VPP must not remain at 12V for more than a total of 80hrs.
34/71
M29W640FT, M29W640FB
7
DC and AC parameters
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 11.
Operating and AC measurement conditions
M29W640FT, M29W640FB
Unit
Parameter
Min
Max
VCC Supply voltage
2.7
3.6
V
Ambient Operating Temperature
–40
85
°C
Load capacitance (CL)
30
pF
Input Rise and Fall times
10
Input Pulse voltages
0 to VCC
V
VCC/2
V
Input and Output Timing Ref. voltages
Figure 6.
ns
AC measurement I/O waveform
VCC
VCC/2
0V
AI05557
Figure 7.
AC measurement Load Circuit
VPP
VCC
VCC
25kΩ
DEVICE
UNDER
TEST
CL
0.1µF
25kΩ
0.1µF
CL includes JIG capacitance
AI05558
35/71
DC and AC parameters
Table 12.
M29W640FT, M29W640FB
Device capacitance
Symbol
CIN
Parameter
Input capacitance
COUT
Output capacitance
Test condition
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
1. Sampled only, not 100% tested.
Table 13.
Symbol
DC characteristics
Parameter
Min
Max
Unit
0V ≤VIN ≤VCC
±1
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤VOUT ≤VCC
±1
µA
ICC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
10
mA
ICC2
Supply Current (Standby)
E = VCC ±0.2V,
RP = VCC ±0.2V
100
µA
Supply Current
(Program/Erase)
VPP/WP =
VIL or VIH
20
mA
ICC3
VPP/WP = VPP
20
mA
Program/Erase
Controller active
VIL
Input Low voltage
–0.5
0.8
V
VIH
Input High voltage
0.7VCC
VCC +0.3
V
VPP
Voltage for VPP/WP
Program Acceleration
VCC = 2.7V ±10%
11.5
12.5
V
IPP
Current for VPP/WP
Program Acceleration
VCC = 2.7V ±10%
15
mA
VOL
Output Low voltage
IOL = 1.8mA
0.45
V
VOH
Output High voltage
IOH = –100µA
VID
Identification voltage
11.5
12.5
V
Program/Erase Lockout
Supply voltage
1.8
2.3
V
VLKO(1)
1. Sampled only, not 100% tested.
36/71
Test condition
VCC –0.4
V
M29W640FT, M29W640FB
Figure 8.
DC and AC parameters
Read Mode AC waveforms
tAVAV
A0-A20/
A–1
VALID
tAVQV
tAXQX
E
tELQV
tEHQX
tELQX
tEHQZ
G
tGLQX
tGHQX
tGHQZ
tGLQV
DQ0-DQ7/
DQ8-DQ15
VALID
tBHQV
BYTE
tELBL/tELBH
tBLQZ
AI05559
Figure 9.
Page Read AC waveforms
A2-A21
VALID ADDRESS
A0-A1
VALID
VALID
VALID
VALID
tAVQV
E
tELQV
tEHQX
tEHQZ
G
tGHQX
tGLQV
DQ0-DQ15
tGHQZ
tAVQV1
VALID
DATA
VALID DATA
VALID DATA
VALID DATA
AI11553
37/71
DC and AC parameters
Table 14.
Symbol
M29W640FT, M29W640FB
Read AC characteristics
Alt
Parameter
60
70
Unit
E = VIL,
G = VIL
Min
60
70
ns
tACC Address Valid to Output Valid
E = VIL,
G = VIL
Max
60
70
ns
tPAGE Address Valid to Output Valid (Page)
E = VIL,
G = VIL
Max
25
25
ns
tAVAV
tRC
tAVQV
tAVQV1
Address Valid to Next Address Valid
tELQX(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
Min
0
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
60
70
ns
tGLQX(1)
tOLZ
Output Enable Low to Output Transition
E = VIL
Min
0
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
25
25
ns
tEHQZ(1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
25
25
ns
(1)
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
25
25
ns
tOH
Chip Enable, Output Enable or Address
Transition to Output Transition
Min
0
0
ns
tGHQZ
tEHQX
tGHQX
tAXQX
tELBL
tELBH
tELFL
Chip Enable to BYTE Low or High
tELFH
Max
5
5
ns
tBLQZ
tFLQZ BYTE Low to Output Hi-Z
Max
25
25
ns
tBHQV
tFHQV BYTE High to Output Valid
Max
30
30
ns
1. Sampled only, not 100% tested.
38/71
Test condition
M29W640FT,
M29W640FB
M29W640FT, M29W640FB
DC and AC parameters
Figure 10. Write AC waveforms, Write Enable controlled
tAVAV
A0-A20/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
AI05560
39/71
DC and AC parameters
Table 15.
Symbol
M29W640FT, M29W640FB
Write AC characteristics, Write Enable controlled
Alt
M29W640FT,
M29W640FB
Parameter
60
70
Unit
tAVAV
tWC
Address Valid to Next Address Valid
Min
60
70
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45
45
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
45
45
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
45
45
ns
Output Enable High to Write Enable Low
Min
0
0
ns
tGHWL
tWHGL
tOEH
Write Enable High to Output Enable Low
Min
0
0
ns
tWHRL(1)
tBUSY
Program/Erase Valid to RB Low
Max
30
30
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
Min
50
50
µs
1. Sampled only, not 100% tested.
40/71
M29W640FT, M29W640FB
DC and AC parameters
Figure 11. Write AC waveforms, Chip Enable controlled
tAVAV
A0-A20/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
AI05561
41/71
DC and AC parameters
Table 16.
M29W640FT, M29W640FB
Write AC characteristics, Chip Enable controlled
M29W640FT, M29W640FB
Symbol
Alt
Parameter
Unit
60
70
tAVAV
tWC
Address Valid to Next Address Valid
Min
60
70
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
Min
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
Min
45
45
ns
tDVEH
tDS
Input Valid to Chip Enable High
Min
45
45
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
30
30
ns
tAVEL
tAS
Address Valid to Chip Enable Low
Min
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
Min
45
45
ns
Output Enable High Chip Enable Low
Min
0
0
ns
Chip Enable High to Output Enable Low
Min
0
0
ns
tGHEL
tOEH
tEHGL
tEHRL(1)
tBUSY Program/Erase Valid to RB Low
Max
30
30
ns
tVCHWL
tVCS
Min
50
50
µs
VCC High to Write Enable Low
1. Sampled only, not 100% tested.
Figure 12. Reset/Block Temporary Unprotect AC waveforms
W, E, G
tPHWL, tPHEL, tPHGL
RB
tRHWL, tRHEL, tRHGL
RP
tPLPX
tPHPHH
tPLYH
AI02931B
42/71
M29W640FT, M29W640FB
DC and AC parameters
Figure 13. Accelerated Program Timing waveforms
VPP
VPP/WP
VIL or VIH
tVHVPP
tVHVPP
AI05563
Table 17.
Reset/Block Temporary Unprotect AC characteristics
M29W640FT,
M29W640FB
Unit
Min
50
ns
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
Min
0
ns
RP Pulse Width
Min
500
ns
RP Low to Read mode
Max
50
µs
RP Rise Time to VID
Min
500
ns
VPP Rise and Fall Time
Min
250
ns
Symbol
Alt
tPHWL(1)
tPHEL
tPHGL(1)
tRH
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
tRHWL(1)
tRHEL(1)
tRHGL(1)
tRB
tPLPX
tRP
tPLYH
tREADY
tPHPHH(1)
tVIDR
tVHVPP(1)
Parameter
1. Sampled only, not 100% tested.
43/71
Package mechanical
8
M29W640FT, M29W640FB
Package mechanical
Figure 14. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, top view
package outline
1
48
e
D1
B
24
L1
25
A2
E1
E
A
A1
DIE
α
L
C
CP
TSOP-G
1. Drawing is not to scale.
Table 18.
TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
1.200
Max
0.0472
A1
0.100
0.050
0.150
0.0039
0.0020
0.0059
A2
1.000
0.950
1.050
0.0394
0.0374
0.0413
B
0.220
0.170
0.270
0.0087
0.0067
0.0106
0.100
0.210
0.0039
0.0083
C
CP
44/71
Max
0.100
0.0039
D1
12.000
11.900
12.100
0.4724
0.4685
0.4764
E
20.000
19.800
20.200
0.7874
0.7795
0.7953
E1
18.400
18.300
18.500
0.7244
0.7205
0.7283
e
0.500
–
–
0.0197
–
–
L
0.600
0.500
0.700
0.0236
0.0197
0.0276
L1
0.800
α
3°
0°
5°
0.0315
0°
5°
3°
M29W640FT, M29W640FB
Package mechanical
Figure 15. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline
D
D1
FD
FE
SD
SE
E
E1
BALL "A1"
ddd
e
e
b
A
A2
A1
BGA-Z32
1. Drawing is not to scale.
Table 19.
TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.200
A1
0.0472
0.260
A2
0.0102
0.900
b
Max
0.350
0.450
0.0354
0.0138
0.0177
D
6.000
5.900
6.100
0.2362
0.2323
0.2402
D1
4.000
–
–
0.1575
–
–
ddd
0.100
0.0039
E
8.000
7.900
8.100
0.3150
0.3110
0.3189
E1
5.600
–
–
0.2205
–
–
e
0.800
–
–
0.0315
–
–
FD
1.000
–
–
0.0394
–
–
FE
1.200
–
–
0.0472
–
–
SD
0.400
–
–
0.0157
–
–
SE
0.400
–
–
0.0157
–
–
45/71
Part numbering
9
M29W640FT, M29W640FB
Part numbering
Table 20.
Ordering information scheme
Example:
M29W640FB
70
N
6
F
Device Type
M29
Operating Voltage
W = VCC = 2.7 to 3.6V
Device Function
640F = 64 Mbit (x8 / x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
60 = 60ns
70 = 70ns
Package
N = TSOP48: 12 x 20 mm
ZA = TFBGA48: 6x8mm, 0.80 mm pitch
Temperature Range
6 = −40 to 85 °C
Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
Note:
This product is also available with the Extended Block factory locked. For further details and
ordering information contact your nearest ST sales office.
Devices are shipped from the factory with the memory content bits erased to 1. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact your nearest ST Sales Office.
46/71
M29W640FT, M29W640FB
Appendix A
Table 21.
Block addresses
Block addresses
Top Boot Block addresses, M29W640FT
Block
KBytes/KWords
0
64/32
1
64/32
Protection Block Group
(x8)
(x16)
000000h–00FFFFh(1)
000000h–007FFFh(1)
010000h–01FFFFh
008000h–00FFFFh
Protection Group
2
64/32
020000h–02FFFFh
010000h–017FFFh
3
64/32
030000h–03FFFFh
018000h–01FFFFh
4
64/32
040000h–04FFFFh
020000h–027FFFh
5
64/32
050000h–05FFFFh
028000h–02FFFFh
Protection Group
6
64/32
060000h–06FFFFh
030000h–037FFFh
7
64/32
070000h–07FFFFh
038000h–03FFFFh
8
64/32
080000h–08FFFFh
040000h–047FFFh
9
64/32
090000h–09FFFFh
048000h–04FFFFh
Protection Group
10
64/32
0A0000h–0AFFFFh
050000h–057FFFh
11
64/32
0B0000h–0BFFFFh
058000h–05FFFFh
12
64/32
0C0000h–0CFFFFh
060000h–067FFFh
13
64/32
0D0000h–0DFFFFh
068000h–06FFFFh
Protection Group
14
64/32
0E0000h–0EFFFFh
070000h–077FFFh
15
64/32
0F0000h–0FFFFFh
078000h–07FFFFh
16
64/32
100000h–10FFFFh
080000h–087FFFh
17
64/32
110000h–11FFFFh
088000h–08FFFFh
Protection Group
18
64/32
120000h–12FFFFh
090000h–097FFFh
19
64/32
130000h–13FFFFh
098000h–09FFFFh
20
64/32
140000h–14FFFFh
0A0000h–0A7FFFh
21
64/32
150000h–15FFFFh
0A8000h–0AFFFFh
Protection Group
22
64/32
160000h–16FFFFh
0B0000h–0B7FFFh
23
64/32
170000h–17FFFFh
0B8000h–0BFFFFh
24
64/32
180000h–18FFFFh
0C0000h–0C7FFFh
25
64/32
190000h–19FFFFh
0C8000h–0CFFFFh
Protection Group
26
64/32
1A0000h–1AFFFFh
0D0000h–0D7FFFh
27
64/32
1B0000h–1BFFFFh
0D8000h–0DFFFFh
28
64/32
1C0000h–1CFFFFh
0E0000h–0E7FFFh
29
64/32
1D0000h–1DFFFFh
0E8000h–0EFFFFh
Protection Group
30
64/32
1E0000h–1EFFFFh
0F0000h–0F7FFFh
31
64/32
1F0000h–1FFFFFh
0F8000h–0FFFFFh
47/71
Block addresses
Table 21.
M29W640FT, M29W640FB
Top Boot Block addresses, M29W640FT (continued)
Block
KBytes/KWords
32
64/32
33
64/32
Protection Block Group
(x8)
(x16)
200000h–20FFFFh
100000h–107FFFh
210000h–21FFFFh
108000h–10FFFFh
Protection Group
34
64/32
220000h–22FFFFh
110000h–117FFFh
35
64/32
230000h–23FFFFh
118000h–11FFFFh
36
64/32
240000h–24FFFFh
120000h–127FFFh
37
64/32
250000h–25FFFFh
128000h–12FFFFh
Protection Group
38
64/32
260000h–26FFFFh
130000h–137FFFh
39
64/32
270000h–27FFFFh
138000h–13FFFFh
40
64/32
280000h–28FFFFh
140000h–147FFFh
41
64/32
290000h–29FFFFh
148000h–14FFFFh
Protection Group
42
64/32
2A0000h–2AFFFFh
150000h–157FFFh
43
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
44
64/32
2C0000h–2CFFFFh
160000h–167FFFh
45
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
Protection Group
46
64/32
2E0000h–2EFFFFh
170000h–177FFFh
47
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
48
64/32
300000h–30FFFFh
180000h–187FFFh
49
64/32
310000h–31FFFFh
188000h–18FFFFh
Protection Group
50
64/32
320000h–32FFFFh
190000h–197FFFh
51
64/32
330000h–33FFFFh
198000h–19FFFFh
52
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
53
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
Protection Group
54
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
55
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
56
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
57
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
Protection Group
58
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
59
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
60
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
61
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
Protection Group
62
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
63
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
48/71
M29W640FT, M29W640FB
Table 21.
Block addresses
Top Boot Block addresses, M29W640FT (continued)
Block
KBytes/KWords
64
64/32
65
64/32
Protection Block Group
(x8)
(x16)
400000h–40FFFFh
200000h–207FFFh
410000h–41FFFFh
208000h–20FFFFh
Protection Group
66
64/32
420000h–42FFFFh
210000h–217FFFh
67
64/32
430000h–43FFFFh
218000h–21FFFFh
68
64/32
440000h–44FFFFh
220000h–227FFFh
69
64/32
450000h–45FFFFh
228000h–22FFFFh
Protection Group
70
64/32
460000h–46FFFFh
230000h–237FFFh
71
64/32
470000h–47FFFFh
238000h–23FFFFh
72
64/32
480000h–48FFFFh
240000h–247FFFh
73
64/32
490000h–49FFFFh
248000h–24FFFFh
Protection Group
74
64/32
4A0000h–4AFFFFh
250000h–257FFFh
75
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
76
64/32
4C0000h–4CFFFFh
260000h–267FFFh
77
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
Protection Group
78
64/32
4E0000h–4EFFFFh
270000h–277FFFh
79
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
80
64/32
500000h–50FFFFh
280000h–287FFFh
81
64/32
510000h–51FFFFh
288000h–28FFFFh
Protection Group
82
64/32
520000h–52FFFFh
290000h–297FFFh
83
64/32
530000h–53FFFFh
298000h–29FFFFh
84
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
85
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
Protection Group
86
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
87
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
88
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
89
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
Protection Group
90
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
91
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
92
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
93
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
Protection Group
94
64/32
5E0000h–5EFFFFh
2F0000h–2F7FFFh
95
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
49/71
Block addresses
Table 21.
M29W640FT, M29W640FB
Top Boot Block addresses, M29W640FT (continued)
Block
KBytes/KWords
96
64/32
97
64/32
Protection Block Group
(x8)
(x16)
600000h–60FFFFh
300000h–307FFFh
610000h–61FFFFh
308000h–30FFFFh
Protection Group
98
64/32
620000h–62FFFFh
310000h–317FFFh
99
64/32
630000h–63FFFFh
318000h–31FFFFh
100
64/32
640000h–64FFFFh
320000h–327FFFh
101
64/32
650000h–65FFFFh
328000h–32FFFFh
Protection Group
102
64/32
660000h–66FFFFh
330000h–337FFFh
103
64/32
670000h–67FFFFh
338000h–33FFFFh
104
64/32
680000h–68FFFFh
340000h–347FFFh
105
64/32
690000h–69FFFFh
348000h–34FFFFh
Protection Group
106
64/32
6A0000h–6AFFFFh
350000h–357FFFh
107
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
108
64/32
6C0000h–6CFFFFh
360000h–367FFFh
109
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
Protection Group
110
64/32
6E0000h–6EFFFFh
370000h–377FFFh
111
64/32
6F0000h–6FFFFFh
378000h–37FFFFh
112
64/32
700000h–70FFFFh
380000h–387FFFh
113
64/32
710000h–71FFFFh
388000h–38FFFFh
Protection Group
114
64/32
720000h–72FFFFh
390000h–397FFFh
115
64/32
730000h–73FFFFh
398000h–39FFFFh
116
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
117
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
Protection Group
118
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
119
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
120
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
121
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
Protection Group
122
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
123
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
50/71
M29W640FT, M29W640FB
Table 21.
Block addresses
Top Boot Block addresses, M29W640FT (continued)
Block
KBytes/KWords
124
Protection Block Group
(x8)
(x16)
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
125
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
126
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
127
8/4
7F0000h–7F1FFFh
3F8000h–3F8FFFh
128
8/4
7F2000h–7F3FFFh
3F9000h–3F9FFFh
129
8/4
7F4000h–7F5FFFh
3FA000h–3FAFFFh
130
8/4
7F6000h–7F7FFFh
3FB000h–3FBFFFh
131
8/4
7F8000h–7F9FFFh
3FC000h–3FCFFFh
132
8/4
7FA000h–7FBFFFh
3FD000h–3FDFFFh
133
8/4
7FC000h–7FDFFFh
3FE000h–3FEFFFh
134
8/4
7FE000h–7FFFFFh
3FF000h–3FFFFFh
Protection Group
1. Used as the Extended Block addresses in Extended Block mode.
51/71
Block addresses
Table 22.
M29W640FT, M29W640FB
Bottom Boot Block addresses, M29W640FB
Block
KBytes/KWords
0
Protection Block Group
(x8)
(x16)
8/4
000000h-001FFFh(1)
000000h–000FFFh(1)
1
8/4
002000h-003FFFh
001000h–001FFFh
2
8/4
004000h-005FFFh
002000h–002FFFh
3
8/4
006000h-007FFFh
003000h–003FFFh
4
8/4
008000h-009FFFh
004000h–004FFFh
5
8/4
00A000h-00BFFFh
005000h–005FFFh
6
8/4
00C000h-00DFFFh
006000h–006FFFh
7
8/4
00E000h-00FFFFh
007000h–007FFFh
8
64/32
010000h-01FFFFh
008000h–00FFFFh
9
64/32
020000h-02FFFFh
010000h–017FFFh
10
64/32
030000h-03FFFFh
018000h–01FFFFh
11
64/32
040000h-04FFFFh
020000h–027FFFh
12
64/32
050000h-05FFFFh
028000h–02FFFFh
Protection Group
Protection Group
13
64/32
060000h-06FFFFh
030000h–037FFFh
14
64/32
070000h-07FFFFh
038000h–03FFFFh
15
64/32
080000h-08FFFFh
040000h–047FFFh
16
64/32
090000h-09FFFFh
048000h–04FFFFh
Protection Group
17
64/32
0A0000h-0AFFFFh
050000h–057FFFh
18
64/32
0B0000h-0BFFFFh
058000h–05FFFFh
19
64/32
0C0000h-0CFFFFh
060000h–067FFFh
20
64/32
0D0000h-0DFFFFh
068000h–06FFFFh
Protection Group
21
64/32
0E0000h-0EFFFFh
070000h–077FFFh
22
64/32
0F0000h-0FFFFFh
078000h–07FFFFh
23
64/32
100000h-10FFFFh
080000h–087FFFh
24
64/32
110000h-11FFFFh
088000h–08FFFFh
Protection Group
25
64/32
120000h-12FFFFh
090000h–097FFFh
26
64/32
130000h-13FFFFh
098000h–09FFFFh
27
64/32
140000h-14FFFFh
0A0000h–0A7FFFh
28
64/32
150000h-15FFFFh
0A8000h–0AFFFFh
Protection Group
29
64/32
160000h-16FFFFh
0B0000h–0B7FFFh
30
64/32
170000h-17FFFFh
0B8000h–0BFFFFh
31
64/32
180000h-18FFFFh
0C0000h–0C7FFFh
32
64/32
190000h-19FFFFh
0C8000h–0CFFFFh
Protection Group
33
64/32
1A0000h-1AFFFFh
0D0000h–0D7FFFh
34
64/32
1B0000h-1BFFFFh
0D8000h–0DFFFFh
52/71
M29W640FT, M29W640FB
Table 22.
Block addresses
Bottom Boot Block addresses, M29W640FB (continued)
Block
KBytes/KWords
35
64/32
36
64/32
Protection Block Group
(x8)
(x16)
1C0000h-1CFFFFh
0E0000h–0E7FFFh
1D0000h-1DFFFFh
0E8000h–0EFFFFh
Protection Group
37
64/32
1E0000h-1EFFFFh
0F0000h–0F7FFFh
38
64/32
1F0000h-1FFFFFh
0F8000h–0FFFFFh
39
64/32
200000h-20FFFFh
100000h–107FFFh
40
64/32
210000h-21FFFFh
108000h–10FFFFh
Protection Group
41
64/32
220000h-22FFFFh
110000h–117FFFh
42
64/32
230000h-23FFFFh
118000h–11FFFFh
43
64/32
240000h-24FFFFh
120000h–127FFFh
44
64/32
250000h-25FFFFh
128000h–12FFFFh
Protection Group
45
64/32
260000h-26FFFFh
130000h–137FFFh
46
64/32
270000h-27FFFFh
138000h–13FFFFh
47
64/32
280000h-28FFFFh
140000h–147FFFh
48
64/32
290000h-29FFFFh
148000h–14FFFFh
Protection Group
49
64/32
2A0000h-2AFFFFh
150000h–157FFFh
50
64/32
2B0000h-2BFFFFh
158000h–15FFFFh
51
64/32
2C0000h-2CFFFFh
160000h–167FFFh
52
64/32
2D0000h-2DFFFFh
168000h–16FFFFh
Protection Group
53
64/32
2E0000h-2EFFFFh
170000h–177FFFh
54
64/32
2F0000h-2FFFFFh
178000h–17FFFFh
55
64/32
300000h-30FFFFh
180000h–187FFFh
56
64/32
310000h-31FFFFh
188000h–18FFFFh
Protection Group
57
64/32
320000h-32FFFFh
190000h–197FFFh
58
64/32
330000h-33FFFFh
198000h–19FFFFh
59
64/32
340000h-34FFFFh
1A0000h–1A7FFFh
60
64/32
350000h-35FFFFh
1A8000h–1AFFFFh
Protection Group
61
64/32
360000h-36FFFFh
1B0000h–1B7FFFh
62
64/32
370000h-37FFFFh
1B8000h–1BFFFFh
63
64/32
380000h-38FFFFh
1C0000h–1C7FFFh
64
64/32
390000h-39FFFFh
1C8000h–1CFFFFh
Protection Group
65
64/32
3A0000h-3AFFFFh
1D0000h–1D7FFFh
66
64/32
3B0000h-3BFFFFh
1D8000h–1DFFFFh
53/71
Block addresses
Table 22.
M29W640FT, M29W640FB
Bottom Boot Block addresses, M29W640FB (continued)
Block
KBytes/KWords
67
64/32
68
64/32
Protection Block Group
(x8)
(x16)
3C0000h-3CFFFFh
1E0000h–1E7FFFh
3D0000h-3DFFFFh
1E8000h–1EFFFFh
Protection Group
69
64/32
3E0000h-3EFFFFh
1F0000h–1F7FFFh
70
64/32
3F0000h-3FFFFFh
1F8000h–1FFFFFh
71
64/32
400000h-40FFFFh
200000h–207FFFh
72
64/32
410000h-41FFFFh
208000h–20FFFFh
Protection Group
73
64/32
420000h-42FFFFh
210000h–217FFFh
74
64/32
430000h-43FFFFh
218000h–21FFFFh
75
64/32
440000h-44FFFFh
220000h–227FFFh
76
64/32
450000h-45FFFFh
228000h–22FFFFh
Protection Group
77
64/32
460000h-46FFFFh
230000h–237FFFh
78
64/32
470000h-47FFFFh
238000h–23FFFFh
79
64/32
480000h-48FFFFh
240000h–247FFFh
80
64/32
490000h-49FFFFh
248000h–24FFFFh
Protection Group
81
64/32
4A0000h-4AFFFFh
250000h–257FFFh
82
64/32
4B0000h-4BFFFFh
258000h–25FFFFh
83
64/32
4C0000h-4CFFFFh
260000h–267FFFh
84
64/32
4D0000h-4DFFFFh
268000h–26FFFFh
Protection Group
85
64/32
4E0000h-4EFFFFh
270000h–277FFFh
86
64/32
4F0000h-4FFFFFh
278000h–27FFFFh
87
64/32
500000h-50FFFFh
280000h–287FFFh
88
64/32
510000h-51FFFFh
288000h–28FFFFh
Protection Group
89
64/32
520000h-52FFFFh
290000h–297FFFh
90
64/32
530000h-53FFFFh
298000h–29FFFFh
91
64/32
540000h-54FFFFh
2A0000h–2A7FFFh
92
64/32
550000h-55FFFFh
2A8000h–2AFFFFh
Protection Group
93
64/32
560000h-56FFFFh
2B0000h–2B7FFFh
94
64/32
570000h-57FFFFh
2B8000h–2BFFFFh
95
64/32
580000h-58FFFFh
2C0000h–2C7FFFh
96
64/32
590000h-59FFFFh
2C8000h–2CFFFFh
Protection Group
97
64/32
5A0000h-5AFFFFh
2D0000h–2D7FFFh
98
64/32
5B0000h-5BFFFFh
2D8000h–2DFFFFh
54/71
M29W640FT, M29W640FB
Table 22.
Block addresses
Bottom Boot Block addresses, M29W640FB (continued)
Block
KBytes/KWords
99
64/32
100
64/32
Protection Block Group
(x8)
(x16)
5C0000h-5CFFFFh
2E0000h–2E7FFFh
5D0000h-5DFFFFh
2E8000h–2EFFFFh
Protection Group
101
64/32
5E0000h-5EFFFFh
2F0000h–2F7FFFh
102
64/32
5F0000h-5FFFFFh
2F8000h–2FFFFFh
103
64/32
600000h-60FFFFh
300000h–307FFFh
104
64/32
610000h-61FFFFh
308000h–30FFFFh
Protection Group
105
64/32
620000h-62FFFFh
310000h–317FFFh
106
64/32
630000h-63FFFFh
318000h–31FFFFh
107
64/32
640000h-64FFFFh
320000h–327FFFh
108
64/32
650000h-65FFFFh
328000h–32FFFFh
Protection Group
109
64/32
660000h-66FFFFh
330000h–337FFFh
110
64/32
670000h-67FFFFh
338000h–33FFFFh
111
64/32
680000h-68FFFFh
340000h–347FFFh
112
64/32
690000h-69FFFFh
348000h–34FFFFh
Protection Group
113
64/32
6A0000h-6AFFFFh
350000h–357FFFh
114
64/32
6B0000h-6BFFFFh
358000h–35FFFFh
115
64/32
6C0000h-6CFFFFh
360000h–367FFFh
116
64/32
6D0000h-6DFFFFh
368000h–36FFFFh
Protection Group
117
64/32
6E0000h-6EFFFFh
370000h–377FFFh
118
64/32
6F0000h-6FFFFFh
378000h–37FFFFh
119
64/32
700000h-70FFFFh
380000h–387FFFh
120
64/32
710000h-71FFFFh
388000h–38FFFFh
Protection Group
121
64/32
720000h-72FFFFh
390000h–397FFFh
122
64/32
730000h-73FFFFh
398000h–39FFFFh
123
64/32
740000h-74FFFFh
3A0000h–3A7FFFh
124
64/32
750000h-75FFFFh
3A8000h–3AFFFFh
Protection Group
125
64/32
760000h-76FFFFh
3B0000h–3B7FFFh
126
64/32
770000h-77FFFFh
3B8000h–3BFFFFh
127
64/32
780000h-78FFFFh
3C0000h–3C7FFFh
128
64/32
790000h-79FFFFh
3C8000h–3CFFFFh
Protection Group
129
64/32
7A0000h-7AFFFFh
3D0000h–3D7FFFh
130
64/32
7B0000h-7BFFFFh
3D8000h–3DFFFFh
55/71
Block addresses
Table 22.
M29W640FT, M29W640FB
Bottom Boot Block addresses, M29W640FB (continued)
Block
KBytes/KWords
131
64/32
132
64/32
Protection Block Group
(x8)
(x16)
7C0000h-7CFFFFh
3E0000h–3E7FFFh
7D0000h-7DFFFFh
3E8000h–3EFFFFh
Protection Group
133
64/32
7E0000h-7EFFFFh
3F0000h–3F7FFFh
134
64/32
7F0000h-7FFFFFh
3F8000h–3FFFFFh
1. Used as the Extended Block addresses in Extended Block mode.
56/71
M29W640FT, M29W640FB
Appendix B
Common Flash Interface (CFI)
Common Flash Interface (CFI)
The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query Command is issued the device enters CFI Query mode and the data
structure is read from the memory. Tables 23, 24, 25, 26, 27, and 28, show the addresses
used to retrieve the data.
The CFI data structure also contains a security area where a 64 bit unique security number
is written (see Table 28: Security Code Area). This area can be accessed only in Read
mode by the final user. It is impossible to change the security number after it has been
written by ST.
Query structure overview(1)
Table 23.
Address
Sub-section name
Description
x16
x8
10h
20h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
36h
System Interface Information
Device timing & voltage information
27h
4Eh
Device Geometry Definition
Flash device layout
40h
80h
Primary Algorithm-specific Extended
Query table
Additional information specific to the
Primary Algorithm (optional)
61h
C2h
Security Code Area
64 bit unique device number
1. Query data are always presented on the lowest order data outputs.
57/71
Common Flash Interface (CFI)
Table 24.
M29W640FT, M29W640FB
CFI Query Identification String(1)
Address
Data
Description
Value
x16
x8
10h
20h
0051h
“Q”
11h
22h
0052h Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
14h
28h
0002h Primary Algorithm Command Set and Control Interface ID code
0000h 16 bit ID code defining a specific algorithm
15h
2Ah
16h
2Ch
17h
2Eh
18h
30h
0000h Alternate Vendor Command Set and Control Interface ID Code
0000h second vendor - specified algorithm supported
19h
32h
0000h
1Ah
34h
0000h
0040h Address for Primary Algorithm extended Query table (see
0000h Table 27)
Address for Alternate Algorithm extended Query table
AMD
Compatible
P = 40h
NA
NA
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 25.
CFI Query System Interface Information
Address
Data
Value
x8
1Bh
36h
VCC Logic Supply Minimum Program/Erase voltage
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
VCC Logic Supply Maximum Program/Erase voltage
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
VPP [Programming] Supply Minimum Program/Erase voltage
00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh 3Ch 00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Dh 3Ah
1Fh
20h
21h
3Eh
40h
42h
0004h Typical timeout per single byte/word program = 2n µs
16µs
n
0000h Typical timeout for minimum size write buffer program = 2 µs
n
000Ah Typical timeout per individual Block Erase = 2 ms
n
22h
44h
0000h Typical timeout for full Chip Erase = 2 ms
23h
46h
0004h Maximum timeout for byte/word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
25h
26h
58/71
Description
x16
4Ah
4Ch
1s
NA
n
0003h Maximum timeout per individual Block Erase = 2 times typical
n
NA
0000h Maximum timeout for Chip Erase = 2 times typical
256µs
NA
8s
NA
M29W640FT, M29W640FB
Common Flash Interface (CFI)
Device Geometry Definition(1)
Table 26.
Address
Data
Description
Value
x16
x8
27h
4Eh
0017h Device Size = 2n in number of bytes
8 MByte
28h
29h
50h
52h
0002h
Flash Device Interface Code description
0000h
x8, x16
Async.
2Ah
2Bh
54h
56h
0004h
Maximum number of bytes in multi-byte program or page = 2n
0000h
2Ch
58h
0002h
2Dh
2Eh
5Ah
5Ch
0007h Region 1 Information
0000h Number of Erase Blocks of identical size = 0007h+1
2Fh
30h
5Eh
60h
0020h Region 1 Information
0000h Block size in Region 1 = 0020h * 256 byte
31h
32h
62h
64h
007Eh Region 2 Information
0000h Number of Erase Blocks of identical size= 007Eh+1
33h
34h
66h
68h
0000h Region 2 Information
0001h Block size in Region 2 = 0100h * 256 byte
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Region 3 Information
Number of Erase Blocks of identical size=007Fh+1
Region 3 Information
Block size in Region 3 = 0000h * 256 byte
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Region 4 Information
Number of Erase Blocks of Identical size=007Fh+1
Region 4 Information
Block size in Region 4 = 0000h * 256 byte
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
16 Bytes
2
8
8Kbyte
127
64Kbyte
0
0
0
0
1. For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase
Block Region 2 from address 008000h to 3FFFFFh.
For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase
Block Region 2 from address 3F8000h to 3FFFFFh.
59/71
Common Flash Interface (CFI)
Table 27.
M29W640FT, M29W640FB
Primary Algorithm-specific Extended Query table
Address
Data
60/71
x16
x8
40h
80h
Description
0050h
Value
"P"
41h
82h
42h
84h
Primary Algorithm extended Query table unique ASCII string
0052h
“PRI”
0049h
43h
86h
0031h Major version number, ASCII
“1”
44h
88h
0033h Minor version number, ASCII
"3"
45h
8Ah
Address Sensitive Unlock (bits 1 to 0)
0000h 00h = required, 01h = not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00h = not supported, 01h = Read only, 02 = Read and Write
2
47h
8Eh
0004h
Block Protection
00h = not supported, x = number of blocks per protection group
4
48h
90h
0001h
Temporary Block Unprotect
00h = not supported, 01h = supported
Yes
49h
92h
0004h
Block Protect /Unprotect
04 = M29W640F
04
4Ah
94h
0000h Simultaneous Operations, 00h = not supported
No
4Bh
96h
0000h Burst Mode: 00h = not supported, 01h = supported
No
4Ch
98h
0001h
4Dh
9Ah
VPP Supply Minimum Program/Erase voltage
00B5h bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
11.5V
4Eh
9Ch
VPP Supply Maximum Program/Erase voltage
00C5h bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
12.5V
4Fh
9Eh
Top/Bottom Boot Block Flag
0002h 02h = Bottom Boot device
0003h 03h = Top Boot device
50h
A0h
Program Suspend
0001h 00h = Not Supported
01h = Supported
Page Mode: 00h = not supported, 01h = 4 page word, 02h = 8
page word
"R"
"I"
Yes
–
Suppor
ted
M29W640FT, M29W640FB
Table 28.
Common Flash Interface (CFI)
Security Code Area
Address
Data
x16
x8
61h
C3h, C2h
XXXX
62h
C5h, C4h
XXXX
63h
C7h, C6h
XXXX
64h
C9h, C8h
XXXX
Description
64 bit: unique device number
61/71
Extended Memory Block
Appendix C
M29W640FT, M29W640FB
Extended Memory Block
The M29W640F has an extra block, the Extended Block, that can be accessed using a
dedicated command.
This Extended Block is 128 Words in x16 mode and 256 Bytes in x8 mode. It is used as a
security block to provide a permanent security identification number) or to store additional
information.
The Extended Block is either Factory Locked or Customer Lockable, its status is indicated
by bit DQ7. This bit is permanently set to either ‘1’ or ‘0’ at the factory and cannot be
changed. When set to ‘1’, it indicates that the device is factory locked and the Extended
Block is protected. When set to ‘0’, it indicates that the device is customer lockable and the
Extended Block is unprotected. Bit DQ7 being permanently locked to either ‘1’ or ‘0’ is
another security feature which ensures that a customer lockable device cannot be used
instead of a factory locked one.
Bit DQ7 is the most significant bit in the Extended Block Verify Code and a specific
procedure must be followed to read it. See “Extended Memory Block Verify Code” in Table 4:
Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH, for details of how to
read bit DQ7.
The Extended Block can only be accessed when the device is in Extended Block mode. For
details of how the Extended Block mode is entered and exited, refer to the Section 4.3.1:
Enter Extended Block command and Section 4.3.2: Exit Extended Block command, and to
Table 6 and Table 7: Commands, 8-bit mode, BYTE = VIL.
C.1
Factory Locked Extended Block
In devices where the Extended Block is factory locked, the Security Identification Number is
written to the Extended Block address space (see Table 29: Extended Block address and
data) in the factory. The DQ7 bit is set to ‘1’ and the Extended Block cannot be unprotected.
C.2
Customer Lockable Extended Block
A device where the Extended Block is customer lockable is delivered with the DQ7 bit set to
‘0’ and the Extended Block unprotected. It is up to the customer to program and protect the
Extended Block but care must be taken because the protection of the Extended Block is not
reversible.
There are two ways of protecting the Extended Block:
●
Issue the Enter Extended Block command to place the device in Extended Block mode,
then use the In-System Technique with RP either at VIH or at VID (refer to Appendix D,
Section D.2: In-System technique and to the corresponding flowcharts, Figure 18 and
Figure 19, for a detailed explanation of the technique).
●
Issue the Enter Extended Block command to place the device in Extended Block mode,
then use the Programmer Technique (refer to Appendix D, Section D.1: Programmer
technique and to the corresponding flowcharts, Figure 16 and Figure 17, for a detailed
explanation of the technique).
Once the Extended Block is programmed and protected, the Exit Extended Block command
must be issued to exit the Extended Block mode and return the device to Read mode.
62/71
M29W640FT, M29W640FB
Table 29.
Extended Memory Block
Extended Block address and data
Address
Data
x8
x16
Factory Locked
Customer Lockable
000000h-00007Fh
000000h-00003Fh
Security Identification Number
000080h-0000FFh
000040h-00007Fh
Unavailable
Determined by
customer
63/71
Block protection
Appendix D
M29W640FT, M29W640FB
Block protection
Block protection can be used to prevent any operation from modifying the data stored in the
memory. The blocks are protected in groups, refer to Appendix A: Block addresses, Table 21
and Table 22 for details of the Protection Groups. Once protected, Program and Erase
operations within the protected group fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is
described in the Signal Descriptions section.
D.1
Programmer technique
The Programmer technique uses high (VID) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a group of blocks follow the flowchart in Figure 16: Programmer Equipment Group
Protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first,
then all groups can be unprotected at the same time. To unprotect the chip follow Figure 17:
Programmer Equipment Chip Unprotect flowchart. Table 30: Programmer technique bus
operations, BYTE = VIH or VIL, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not abort the procedure before
reaching the end. Chip Unprotect can take several seconds and a user message should be
provided to show that the operation is progressing.
D.2
In-System technique
The In-System technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP(1). This can be achieved without violating the maximum ratings of the
components on the microprocessor bus, therefore this technique is suitable for use after the
memory has been fitted to the system.
To protect a group of blocks follow the flowchart in Figure 18: In-System Equipment Group
Protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first,
then all the groups can be unprotected at the same time. To unprotect the chip follow
Figure 19: In-System Equipment Chip Unprotect flowchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not allow the microprocessor to
service interrupts that will upset the timing and do not abort the procedure before reaching
the end. Chip Unprotect can take several seconds and a user message should be provided
to show that the operation is progressing.
Note:
64/71
RP can be either at VIH or at VID when using the In-System Technique to protect the
Extended Block.
M29W640FT, M29W640FB
Table 30.
Block protection
Programmer technique bus operations, BYTE = VIH or VIL
E
G
W
Address Inputs
A0-A21
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block (Group)
Protect(1)
VIL
VID
VIL Pulse
A9 = VID, A12-A21 = Block address
Others = X
X
Chip Unprotect
VID
VID
VIL Pulse
A9 = VID, A12 = VIH, A15 = VIH
Others = X
X
Block (Group)
Protection Verify
VIL
VIL
VIH
A0, A2, A3 = VIL, A1 = VIH, A6 = VIL,
A9 = VID, A12-A21 = Block address
Others = X
Pass = XX01h
Retry = XX00h
Block (Group)
Unprotection Verify
VIL
VIL
VIH
A0, A2, A3 = VIL, A1 = VIH, A6 = VIH,
A9 = VID, A12-A21 = Block address
Others = X
Retry = XX01h
Pass = XX00h
Operation
1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.
65/71
Block protection
M29W640FT, M29W640FB
Figure 16. Programmer Equipment Group Protect flowchart
START
Set-up
ADDRESS = GROUP ADDRESS
W = VIH
n=0
G, A9 = VID,
E = VIL
Protect
Wait 4µs
W = VIL
Wait 100µs
W = VIH
E, G = VIH,
A0, A2, A3 = VIL, A1 =VIH,
A6 =VIL, A9 = VID, Others = X
E = VIL
Verify
Wait 4µs
G = VIL
Wait 60ns
Read DATA
DATA
NO
=
01h
YES
A9 = VIH
E, G = VIH
++n
= 25
NO
End
YES
PASS
A9 = VIH
E, G = VIH
FAIL
1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.
66/71
AI11555
M29W640FT, M29W640FB
Block protection
Figure 17. Programmer Equipment Chip Unprotect flowchart
START
Set-up
PROTECT ALL GROUPS
n=0
CURRENT GROUP = 0
A6, A12, A15 = VIH(1)
E, G, A9 = VID
Unprotect
Wait 4µs
W = VIL
Wait 10ms
W = VIH
E, G = VIH
ADDRESS = CURRENT GROUP ADDRESS
A0, A2, A3 = VIL, A1 =VIH,
A6 =VIH, A9 = VID, Others = X
E = VIL
Wait 4µs
G = VIL
INCREMENT
CURRENT GROUP
Verify
Wait 60ns
Read DATA
NO
End
NO
DATA
=
00h
YES
++n
= 1000
LAST
GROUP
YES
YES
A9 = VIH
E, G = VIH
A9 = VIH
E, G = VIH
FAIL
PASS
NO
AI11556b
1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.
67/71
Block protection
M29W640FT, M29W640FB
Figure 18. In-System Equipment Group Protect flowchart
Set-up
START
n=0
RP = VID
Protect
WRITE 60h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
WRITE 60h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
Wait 100µs
Verify
WRITE 40h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
Wait 4µs
READ DATA
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
DATA
NO
=
01h
YES
++n
= 25
End
RP = VIH
YES
ISSUE READ/RESET
COMMAND
PASS
NO
RP = VIH
ISSUE READ/RESET
COMMAND
FAIL
AI11563
1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.
2. RP can be either at VIH or at VID when using the In-System Technique to protect the Extended Block.
68/71
M29W640FT, M29W640FB
Block protection
Figure 19. In-System Equipment Chip Unprotect flowchart
START
Set-up
PROTECT ALL GROUPS
n=0
CURRENT GROUP = 0
RP = VID
WRITE 60h
ANY ADDRESS WITH
A0, A2, A3, A6 = VIL, A1 = VIH
Unprotect
WRITE 60h
ANY ADDRESS WITH
A0, A2, A3 = VIL, A1, A6 = VIH
Wait 10ms
Verify
WRITE 40h
ADDRESS = CURRENT GROUP ADDRESS
A0, A2, A3 = VIL, A1, A6 = VIH
Wait 4µs
READ DATA
ADDRESS = CURRENT GROUP ADDRESS
A0, A2, A3 = VIL, A1, A6 = VIH
NO
End
NO
DATA
=
00h
INCREMENT
CURRENT GROUP
YES
++n
= 1000
YES
LAST
GROUP
NO
YES
RP = VIH
RP = VIH
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
FAIL
PASS
AI11564
1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.
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Revision history
M29W640FT, M29W640FB
Revision history
Table 31.
Date
Revision
01-Mar-2005
0.1
First Issue.
17-May-2005
0.2
Asynchronous Page mode added.
70ns speed class added.
1.0
Device codes modified.
TFBGA63 replaced by TFBGA48 6x8 package. ECOPACK text updated
Page size changed to 4 Word.
90ns speed class removed.
Quadruple Word/Octuple Byte Program command added.
Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE
= VIH: A0-A21 addresses for reading the Device Code, the Manufacturer
Code, the Extended Memory Block Verify Code, and the Block Protection
Status, have been updated.
Appendix D: Block protection: Table 30: Programmer technique bus
operations, BYTE = VIH or VIL: A0-A21 addresses updated for Block
Protection/Unprotection Verify using the Programmer technique.
2
Datasheet status changed to “Full Datasheet”.
60ns speed class added.
Program Suspend and Resume added.
Section 2.8: VPP/Write Protect (VPP/WP) and Section 4.2: Fast Program
commands. Section 4: Command interface restructured.
Table 29: Extended Block address and data updated.
3
Double Byte Program commands added in Section 4: Command
interface.
Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE
= VIH.: A6 changed from VIH to VIL for Read Block Protection Status
operation.
10-Mar-2006
4
DQ7 changed to DQ7 for Program, Program During Erase Suspend and
Program Error in Table 9: Status Register Bits.
A6 = VIL corrected to A6 = VIH during the Verify phase in Figure 17:
Programmer Equipment Chip Unprotect flowchart.
Address ranges modified for x8 and x16 modes in Table 29: Extended
Block address and data.
23-Aug-2006
5
Amended mistake in second title (M29W640FT changed to
M29W640FB); removed the 4th cycle from the double byte program of
Table 7: Commands, 8-bit mode, BYTE = VIL
25-Oct-2006
6
Table 9: Status Register Bits updated.
10-Dec-2007
7
Applied Numonyx branding.
07-Oct-2005
02-Dec-2005
15-Dec-2005
70/71
Document revision history
Changes
M29W640FT, M29W640FB
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