PH3134-65M Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25°C Symbol Rating Units Collector-Emitter Voltage Parameter VCES 65 V Emitter-Base Voltage VEBO 3.0 V IC 7.7 A Collector Current (Peak) Power Dissipation @ +25°C PTOT 350 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Collector-Emitter Breakdown Voltage IC = 25mA Symbol Min Max Units BVCES 65 - V ICES - 5.0 mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pout = 65W F = 3.1, 3.25, 3.4 GHz RTH(JC) - 0.5 °C/W Input Power Vcc = 36V, Pout = 65W F = 3.1, 3.25, 3.4 GHz PIN - 11.6 W Power Gain Vcc = 36V, Pout = 65W F = 3.1, 3.25, 3.4 GHz GP 7.5 - dB Collector Efficiency Vcc = 36V, Pout = 65W F = 3.1, 3.25, 3.4 GHz ηC 35 - % Input Return Loss Vcc = 36V, Pout = 65W F = 3.1, 3.25, 3.4 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pout = 65W F = 3.25 GHz VSWR-T - 2:1 - 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. PH3134-65M Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 RF Test Fixture Impedance F (GHz) ZIF (Ω) ZOF (Ω) 3.10 11.2 - j11.7 8.1 - j5.3 3.25 11.5 - j9.5 7.1 - j4.3 3.40 12.7 - j7.6 6.4 - j3.3 Test Fixture Circuit Dimensions Test Fixture Assembly 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.