LT1022 High Speed, Precision JFET Input Operational Amplifier U FEATURES ■ ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current: 70°C, 180pA Max 125°C, 4nA Max Gain-Bandwidth Product: 8.5MHz Typ Settling Time to 0.05% (10V Step): 0.9µs Typ U APPLICATIO S ■ ■ ■ ■ ■ The LT®1022 JFET input operational amplifier combines high speed and precision performance. A 26V/µs slew rate and 8.5MHz gain-bandwidth product are simultaneously achieved with offset voltage of typically 80µV, 1.5µV/°C drift, bias currents of 50pA at 70°C, 500pA at 125°C. The output delivers 20mA of load current without gain degradation. The 250µV maximum offset voltage specification represents less than 1/2 least significant bit error in a 14-bit, 10V system. The LT1022A meets or exceeds all OP-16A and OP-16E specifications. It is faster and more accurate without stability problems at cold temperatures. Fast D/A Output Amplifiers (12, 14, 16 Bits) High Speed Instrumentation Fast, Precision Sample and Hold Voltage-to-Frequency Converters Logarithmic Amplifiers The LT1022 can be used as the output amplifier for 12-bit current output D/A converters, as shown below. For a more accurate, lower power dissipation, but slower JFET input op amp, please refer to the LT1055 data sheet. , LTC and LT are registered trademarks of Linear Technology Corporation. U TYPICAL APPLICATIO 12-Bit Voltage Output D/A Converter CF 0mA TO 2mA OR 4mA – 7 LT1022 3 + 6 OUTPUT 0V TO 10V 5V/DIV 15V 2 12-BIT CURRENT OUTPUT D/A CONVERTER (e.g., 6012, 565 OR DAC-80) Large-Signal Response 4 –15V CF = 15pF TO 33pF SETTLING TIME TO 2mV (0.8 LSB) = 1.5µs TO 2µs LT1022 • TA01 AV = 1 CL = 100pF TA = 25°C VS = ±15V 0.5µs/DIV 1022fa 1 LT1022 W W W AXI U U ABSOLUTE RATI GS (Note 1) Supply Voltage ...................................................... ±20V Differential Input Voltage ....................................... ±40V Input Voltage ......................................................... ±20V Output Short Circuit Duration .......................... Indefinite Operating Temperature Range LT1022AM/1022M (OBSOLETE).........–55°C to 125°C LT1022AC/1022C .................................... 0°C to 70°C Storage Temperature Range .................. –65°C to 150°C Lead Temperature (Soldering, 10 sec.)................. 300°C U U W PACKAGE/ORDER I FOR ATIO TOP VIEW N/C 8 BALANCE 1 + 7 V 6 OUT –IN 2 +IN 3 4 V– 5 BALANCE ORDER PART NUMBER LT1022AMH LT1022MH LT1022ACH LT1022CH ORDER PART NUMBER LT1022CN8 TOP VIEW BAL 1 8 N/C –IN 2 7 V+ +IN 3 6 OUT V– 4 5 BAL N8 PACKAGE 8-LEAD PDIP TJMAX = 100°C, θJA = 130°C/W METAL CAN H PACKAGE TJMAX = 150° C, θJA = 150°C/W, θJC = 45° C/W OBSOLETE PACKAGE Consider the N8 Package as an Alternate Source LT1022 • POI01 Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS VS = ± 15V, TA = 25°C, VCM = 0V unless otherwise noted. LT1022M, LT1022CH LT1022CN8 MIN TYP MAX SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 2) H Package N8 Package lOS Input Offset Current Fully Warmed Up 2 10 2 20 pA IB Input Bias Current Fully Warmed Up VCM = +10V ±10 30 ±50 100 ±10 30 ±50 150 pA pA VCM = –11V to 8V VCM = 8V to 11V 1012 1012 1011 Input Resistance—Differential —Common Mode MIN LT1022AM LT1022AC TYP MAX 80 Input Capacitance 250 100 160 1012 1012 1011 4 4 en Input Noise Voltage 0.1Hz to 10Hz 2.5 2.8 en Input Noise Voltage Density fO = 10Hz (Note 3) fO = 1kHz (Note 4) 28 14 50 20 in Input Noise Current Density fO = 10Hz, 1kHz (Note 5) 1.8 4 AVOL Large Signal Voltage Gain VO = ±10V RL = 2k RL = 1k Input Voltage Range CMRR Common-Mode Rejection Ratio VCM = ±10.5V PSRR Power Supply Rejection Ratio VS = ±10V to ±18V VOUT Output Voltage Swing RL = 2k SR Slew Rate 600 1000 UNITS µV µV Ω Ω Ω pF µV/P-P 30 15 60 22 nV/√Hz nV/√Hz 1.8 4 fA√Hz 150 130 400 300 120 100 400 300 V/mV V/mV ±10.5 ±12 ±10.5 ±12 V 86 94 82 92 dB 88 104 86 102 dB ±12 ±13.2 ±12 ±13.2 V 23 26 18 24 V/µs 1022fa 2 LT1022 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS GBW Gain-Bandwidth Product f = 1MHz IS Supply Current Settling Time Offset Voltage Adjustment Range VS = ± 15V, TA = 25°C, VCM = 0V unless otherwise noted. MIN LT1022AM LT1022AC TYP MAX LT1022M, LT1022CH LT1022CN8 MIN TYP MAX 8.5 5.2 UNITS 8.0 7.0 MHz 5.2 7.0 mA A = +1 or A = –1 10V Step to 0.05% 10V Step to 0.02% 0.9 1.3 0.9 1.3 µs µs RPOT = 100k ±7 ±7 mV The ● denotes the specifications which apply over the full operating temperature range of VCM = 0V, 0°C ≤ TA ≤ 70°C. VS = ± 15V, unless otherwise noted. LT1022AC MIN TYP MAX MIN LT1022CH LT1022CN8 TYP MAX SYMBOL PARAMETER CONDITIONS UNITS VOS Input Offset Voltage (Note 2) H Package N8 Package ● ● 140 480 180 300 1000 1700 µV µV Average Temperature Coefficient of Input Offset Voltage H Package N8 Package (Note 6) ● ● 1.3 5.0 1.8 3.0 9.0 15.0 µV/°C µV/°C IOS Input Offset Current Warmed Up, TA = 70°C ● 15 80 18 100 pA IB Input Bias Current Warmed Up, TA = 70°C ● ±50 ±200 ±60 ±250 pA AVOL Large-Signal Voltage Gain VO = ±10V, RL = 2k ● 80 250 60 250 V/mV CMRR Common Mode Rejection Ratio VCM = ±10.4V ● 85 93 80 91 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V ● 86 103 84 101 dB VOUT Output Voltage Swing RL = 2k ● ±12 ±13.1 ±12 ±13.1 V The ● denotes the specifications which apply over the full operating temperature range of – 55°C ≤ TA ≤ 125°C. VS = ± 15V, VCM = 0V, unless otherwise noted. LT1022AM TYP MAX LT1022M TYP MAX UNITS ● 230 750 300 1500 µV (Note 6) ● 1.5 5.0 2.0 9.0 µV/°C Input Offset Current Warmed Up, TA = 125°C ● 0.3 2.0 0.30 3.0 nA IB Input Bias Current Warmed Up, TA = 125°C ● ± 0.5 ± 4.0 ± 0.7 ± 6.0 nA AVOL Large Signal Voltage Gain VO = ±10V, RL = 2k ● 40 120 35 120 V/mV CMRR Common-Mode Rejection Ratio VCM = ±10.4V ● 85 92 80 90 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±17V ● 86 102 84 100 dB VOUT Output Voltage Swing RL = 2k ● ±12 ±12.9 ±12 ±12.9 V SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 2) Average Temperature Coefficient of Input Offset Voltage IOS Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Offset voltage is measured under two different conditions: (a) approximately 0.5 seconds after application of power; (b) at TA = 25°C, with the chip self-heated to approximately 45°C to account for chip temperature rise when the device is fully warmed up. Note 3: 10Hz noise voltage density is sample tested on every lot of A grades. Devices 100% tested at 10Hz are available on request. MIN MIN Note 4: This parameter is tested on a sample basis only. Note 5: Current noise is calculated from the formula: in = (2qIB)1/2, where q = 1.6 • 10 –19 coulomb. The noise of source resistors up to 1GΩ swamps the contribution of current noise. Note 6: Offset voltage drift with temperature is practically unchanged when the offset voltage is trimmed to zero with a 100k potentiometer between the balance terminals and the wiper tied to V +. Devices tested to tighter drift specifications are available on request. 1022fa 3 LT1022 U W TYPICAL PERFOR A CE CHARACTERISTICS 120 100 20 120 GAIN (dB) GAIN (dB) TA = 25°C 80 60 40 TA = –55°C CL = 10pF 10 GAIN PHASE 1 10 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) 180 CL = 300pF VS = ±15V TA = 25°C CL = 300pF 0 –20 140 160 0 20 100 –10 1 3 200 220 CL = 10pF 10 30 FREQUENCY (MHz) LT1022 • TPC01 240 100 30 12 SLEW 11 20 10 9 GBW (f = 1MHz) 8 60 7 50 6 θM 40 –50 –25 50 25 0 75 TEMPERATURE (°C) 100 125 LT1022 • TPC03 Small-Signal Response Settling Time 10 VS = ±15V TA = 25°C 20mV/DIV 24 18 12 6 1M FREQUENCY (Hz) 10M AV = +1 CL = 100pF TA = 25°C VS = ±15V 0.2µs/DIV OUTPUT VOLTAGE SWING FROM 0V (V) 30 PEAK-TO-PEAK OUTPUT SWING (V) VS = ±15V CL = 10pF LT1022 • TPC02 Undistorted Output Swing vs Frequency 0 100k 40 GAIN BANDWIDTH PRODUCT (MHz) CLMAX ≈ 500pF (AV = +1) SLEW RATE (V/µs) 80 30 VS = ±15V PHASE MARGIN (DEGREES) 140 TA = 125°C Phase Margin, Gain Bandwidth Product, Slew Rate vs Temperature Gain, Phase Shift vs Frequency PHASE SHIFT (DEGREES) Gain vs Frequency 10mV 5mV 2mV 1mV 0.5mV 5 0 VS = ±15V TA = 25°C 2mV –5 5mV 10mV –10 0 1mV 1 0.5mV 2 3 SETTLING TIME (µs) LT1022 • TPC04 LT1022 • TPC05 The typical behavior of many LT1022 parameters is identical to the LT1056. Please refer to the LT1055/1056 data sheet for the following typical performance characteristics: Input Bias and Offset Currents vs Temperature Input Bias Current Over the Common-Mode Range Distribution of Input Offset Voltage (H and N8 Package) Distribution of Offset Voltage Drift with Temperature Warm-Up Drift Long Term Drift of Representative Units 0.1Hz to 10Hz Noise Voltage Noise vs Frequency Noise vs Chip Temperature Short Circuit Current vs Time Output Impedance vs Frequency Common Mode Range vs Temperature Common Mode and Power Supply Rejections vs Temperature Common Mode Rejection Ratio vs Frequency Power Supply Rejection Ratio vs Frequency Voltage Gain vs Temperature Supply Current vs Supply Voltage Output Swing vs Load Resistance 1022fa 4 LT1022 U W U U APPLICATIO S I FOR ATIO The LT1056 applications information is directly applicable to the LT1022. Please consult the LT1055/1056 data sheet for details on: (4) phase-reversal protection (1) plug-in compatibility to industry standard devices (6) noise performance (2) offset nulling (7) simplified circuit schematic (5) high speed operation (including settling time test circuit) (3) achieving picoampere/microvolt performance U TYPICAL APPLICATIO S Fast Piezoelectric Accelerometer 1pF TO 5pF ENDEVCO #2215 ACCELEROMETER 1010Ω 2 – 15V 7 LT1022 3 + 6 OUTPUT 4 –15V LT1022 • TA03 1022fa 5 LT1022 U TYPICAL APPLICATIO S 10Hz to 1MHz Voltage-to-Frequency Converter 100pF (POLYSTYRENE) 1.8k 15V 15V 2N2222 2N2222 INPUT 0V TO 10V 5k 2 22.1k (METAL FILM) 1000pF 1.8k 3 + 7 – 2N2222 1.8k 4.7k 4 1 6 LT1022 3 + –15V 4 15V 1k 100k LT1009 200k 8 + 1 0.1µF LT1011 – –15V 1.8k 2 7 4 = 1N4148 TTL OUTPUT 8 –15V 1k 10k 20k 15V 2 LT1011 15V 7 – 1.8k 10pF 100k –15V 1.8k 15V 3 LT1022 • TA04 1022fa 6 LT1022 U TYPICAL APPLICATIO S PIN Photodiode-to-Frequency Converter 5pF FULL-SCALE TRIM 15V 47pF*† 1.8k 15V 2N2222 2N2222 1000pF† 1.8k 4.7k LM329 2 3 TTL OUTPUT 20Hz ← 2MHz 8 + 7 – 2N2222 1.8k 4.7k 4 1 6 LT1022 10M 3 LIGHT INPUT + –15V 4 100k –15V –15V 15V 3.3M 200k LT1004 2.5V 8 + 1k 1k 0.1µF LT1011 1 1.8k 2 7 – 10k DARK CURRENT TRIM 2 10k 20k 15V LT1011 15V 7 – 1.8k 2pF 100k –15V 1.8k 15V 3 4 –15V SCALE FACTOR = 1nW/Hz AT 900 NANOMETERS FROM 20nW TO 2mW = HEWLETT PACKARD PHOTODIODE HP5082-4204 = 1N4148 † POLYSTYRENE * SELECT VALUE FOR 2mW IN = 2MHz OUT LT1022 • TA05 1022fa 7 LT1022 U TYPICAL APPLICATIO S Wide Bandwidth Absolute Value Circuit 10k* 10k* 10k* 10pF 10pF 15V 10k* INPUT ±10V 2 – LT1022 3 1N4148 7 15V 2 4 6 LT1022 3 + 7 – 6 + 4 1N4148 –15V OUTPUT 0V TO 10V –15V *0.1% 1% ACCURACY TO 300kHz 5% ACCURACY TO 700kHz 10k* LT1022 • TA06 Fast, Differential Input Current Source 15V VIN1 VIN2 R* R* 2 – LT1022 3 + 10pF 7 4 –15V R* IOUT = 6 VIN2 – VIN1 R R* IOUT RL *MATCH TO 0.01% FULL-SCALE POWER BANDWIDTH = 1MHz FOR IOUTR = 8VP-P = 400kHz FOR IOUTR = 20VP-P MAXIMUM IOUT = 10mAP-P IOUTP-P • RL COMMON-MODE VOLTAGE AT LT1022 INPUT = 2 LT1022 • TA07 1022fa 8 LT1022 U TYPICAL APPLICATIO S High Output Current Op Amp 15V RS 2 15V – 6 LT1022 3 + 10k CF 7 OUTPUT LT1010 4 –15V –15V SLEW RATE = 26V/µs IOUT = 150mA CL CAN BE 1µF AV = +1, CF = 1000pF AV = –1, CF = 10pF LT1022 • TA08 Low Distortion Sine Wave Oscillator 15V # 327 LAMP 2 – † 430Ω 7 6 LT1022 0.033µF 3 + 4 OUTPUT 0.033µF† –15V 10k 953Ω* 953Ω* 10k * 1% FILM 10k DUAL POTENTIOMETER — MATCH TRACKING TO 0.1% † MATCH CAPACITORS TO 0.1% 5kHz TO 50kHz RANGE DISTORTION < 0.1% AMPLITUDE = 18VP-P LT1022 • TA09 1022fa 9 LT1022 U TYPICAL APPLICATIO S Fast, Precision Sample-And-Hold 1k 330pF – LT1022 SAMPLE-AND-HOLD SIGNAL PATH 2N4393 LT1010 + INPUT 2k – LEVEL SHIFT 15V LT1022 39pF HP5082-2810 3k 1N4148 2N2907 2N2222 TTL INPUT 1000pF POLYSTYRENE 1k 2N2369 470Ω OUTPUT + 1.5k 4.7k* 1000pF 2N2369 20k 1N4148 –15V 0.1µF 820Ω HOLD STEP COMPENSATION 10k 820Ω 15pF –15V 20pF 13k 5.1k – HP5082-2810 LT318A 2N2222 16ns APERTURE TIME 2µs ACQUISITION TIME TO 0.01% SAMPLE-AND-HOLD OFFSET < 250µV HOLD SETTLING < 100ns 5k HOLD STEP COMPENSATION TRIM + 3.5k LT1020 • TA10 1022fa 10 LT1022 U PACKAGE DESCRIPTIO H Package 8-Lead TO-5 Metal Can (.200 Inch PCD) (Reference LTC DWG # 05-08-1320) 0.335 – 0.370 (8.509 – 9.398) DIA 0.305 – 0.335 (7.747 – 8.509) 0.040 (1.016) MAX 0.050 (1.270) MAX SEATING PLANE 0.165 – 0.185 (4.191 – 4.699) GAUGE PLANE 0.010 – 0.045* (0.254 – 1.143) REFERENCE PLANE 0.500 – 0.750 (12.700 – 19.050) 0.016 – 0.021** (0.406 – 0.533) 0.027 – 0.045 (0.686 – 1.143) PIN 1 45°TYP 0.028 – 0.034 (0.711 – 0.864) 0.200 (5.080) TYP 0.110 – 0.160 (2.794 – 4.064) INSULATING STANDOFF *LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND 0.045" BELOW THE REFERENCE PLANE 0.016 – 0.024 **FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS (0.406 – 0.610) H8(TO-5) 0.200 PCD 1197 OBSOLETE PACKAGE 1022fa Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT1022 U PACKAGE DESCRIPTIO N8 Package 8-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510) 0.400* (10.160) MAX 8 7 6 5 1 2 3 4 0.255 ± 0.015* (6.477 ± 0.381) 0.300 – 0.325 (7.620 – 8.255) 0.045 – 0.065 (1.143 – 1.651) 0.065 (1.651) TYP 0.009 – 0.015 (0.229 – 0.381) +0.035 0.325 –0.015 ( 8.255 +0.889 –0.381 0.130 ± 0.005 (3.302 ± 0.127) 0.100 (2.54) BSC ) 0.125 (3.175) 0.020 MIN (0.508) MIN 0.018 ± 0.003 (0.457 ± 0.076) N8 1098 *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm) 1022fa 12 Linear Technology Corporation LW/TP 0902 1K REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 1985