PEMD30; PUMD30 NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 01 — 31 March 2006 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Philips JEITA PNP/PNP complement NPN/NPN complement PEMD30 SOT666 - PEMB30 PEMH30 PUMD30 SOT363 SC-88 PUMB30 PUMH30 1.2 Features n 100 mA output current capability n Built-in bias resistors n Simplifies circuit design n Reduces component count n Reduces pick and place costs 1.3 Applications n Low current peripheral driver n Control of IC inputs n Cost-saving alternative for BC847BPN and BC847BVN n Switching loads 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 50 V Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage open base IO output current - - 100 mA R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Symbol 6 5 4 R1 TR2 TR1 1 2 3 R1 001aab555 1 2 3 006aaa269 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PEMD30 - plastic surface-mounted package; 6 leads SOT666 PUMD30 SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 5. Marking codes Type number Marking code[1] PEMD30 2U PUMD30 *B3 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 2 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V IO output current - 100 mA ICM peak collector current single pulse; tp ≤ 1 ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] - 200 mW SOT666 [1][2] - 200 mW SOT363 [1] - 300 mW SOT666 [1][2] Per device total power dissipation Ptot Tamb ≤ 25 °C - 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] - - 625 K/W SOT666 [1][2] - - 625 K/W SOT363 [1] - - 416 K/W SOT666 [1][2] - - 416 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 3 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off VCE = 30 V; IB = 0 A current VCE = 30 V; IB = 0 A; Tj = 150 °C - - 1 µA - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 5 V; IC = 20 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ Cc collector capacitance TR1 (NPN) - - 2.5 pF TR2 (PNP) - - 3 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 4 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 006aaa696 500 006aaa697 1 hFE (1) 400 VCEsat (V) (2) 300 10−1 (1) (2) (3) (3) 200 100 0 10−1 1 102 10 10−2 10−1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values 006aaa691 500 102 10 IC (mA) Fig 2. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa692 −1 hFE (1) 400 VCEsat (V) 300 (2) −10−1 200 (1) (2) (3) (3) 100 0 −10−1 −1 −10 −102 −10−2 −10−1 IC (mA) −10 −102 IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 3. TR2 (PNP): DC current gain as a function of collector current; typical values Fig 4. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values PEMD30_PUMD30_1 Product data sheet −1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 5 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 8. Package outline 2.2 1.8 6 1.1 0.8 5 1.7 1.5 0.45 0.15 4 6 0.6 0.5 5 4 0.3 0.1 2.2 1.35 2.0 1.15 1.7 1.5 pin 1 index 1.3 1.1 pin 1 index 1 2 3 1 0.25 0.10 0.3 0.2 0.65 2 3 0.18 0.08 0.27 0.17 0.5 1.3 1 Dimensions in mm 04-11-08 Fig 5. Package outline SOT363 (SC-88) Dimensions in mm 04-11-08 Fig 6. Package outline SOT666 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 4000 8000 10000 PEMD30 SOT666 - - -315 - 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel PUMD30 SOT363 - -115 - - 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, see Section 13. [2] T1: normal taping [3] T2: reverse taping PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 6 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 10. Soldering 2.65 0.60 (2×) 0.40 0.90 2.10 (2×) 2.35 solder paste 0.50 (4×) solder lands solder resist 0.50 (4×) occupied area 1.20 2.40 MSA432 Dimensions in mm Fig 7. Reflow soldering footprint SOT363 (SC-88) 5.25 0.30 1.00 4.00 4.50 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering Dimensions in mm sot363 Fig 8. Wave soldering footprint SOT363 (SC-88) PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 7 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 2.75 2.45 2.10 1.60 0.15 (4×) 0.40 (6×) 2.00 1.70 1.00 0.55 (2×) 0.30 (2×) 0.375 (4×) 1.20 2.20 2.50 solder lands placement area solder resist occupied area 0.075 Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 9. Reflow soldering footprint SOT666 PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 8 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMD30_PUMD30_1 20060331 Product data sheet - - PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 9 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] PEMD30_PUMD30_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 31 March 2006 10 of 11 PEMD30; PUMD30 Philips Semiconductors NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 31 March 2006 Document identifier: PEMD30_PUMD30_1